FAIRCHILD KSC3233

KSC3233
KSC3233
High Speed Switching
•
•
•
•
Low Collector-Emitter Saturation Voltage
High speed Switching : tF=1µs (Max.) @ IC=0.8A
Collector-Emitter Voltage : VCEO=400V
Lead formed for Surface Mount Applications (D-PAK, “ -D “ Suffix)
1
I-PAK
1. Base 2. Collector 3. Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
Value
500
Units
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current
2
A
IB
Base Current
0.5
A
PC
Collector Dissipation (TC=25°C)
20
W
PC
Collector Dissipation (Ta=25°C)
1
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCEO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC = 1mA, IE = 0
Min.
500
BVCEO
Collector-Emitter Breakdown Voltage
IC = 10mA, IB = 0
400
ICBO
Collector Cut-off Current
VCB = 400V, IE = 0
IEBO
Emitter Cut-off Current
VEB = 7V, IC = 0
hFE1
hFE2
DC Current Gain
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 1A
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
tON
Turn ON Time
VCC = 200V, IC= 0.8A
1B1 = -I B2 = 0.08A
RL = 250Ω
tSTG
Storage Time
tF
Fall Time
©2001 Fairchild Semiconductor Corporation
Max.
Units
V
100
µA
1
mA
IC = 1A, IB = 0.2A
1
V
IC = 1A, IB = 0.2A
1.5
V
1
µs
2.5
µs
1
µs
V
20
8
Rev. A1, June 2001
KSC3233
Typical Characteristics
100
I B = 18
1.6
VCE = 5V
0m A
I B = 12
0m A
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
2.0
mA
I B = 80
A
I = 60m
1.2
B
I B = 40mA
0.8
IB = 20mA
IB = 10mA
0.4
IB = 0
0.0
0
2
4
6
8
10
1
0.1
1E-3
10
0.01
1
10
Figure 2. DC current Gain
2.4
10
IC = 5 I B
VCE = 5V
2.0
1
IC[A], COLLECTOR CURRENT
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Figure 1. Static Characteristic
V BE(sat)
0.1
V CE(sat)
0.01
1E-3
0.01
0.1
1
1.6
1.2
0.8
0.4
0.0
0.0
10
0.2
IC[A], COLLECTOR CURRENT
0.4
0.6
0.8
1.0
1.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter on Voltage
32
10
IC MAX. (Pulse)
28
PC[W], POWER DISSIPATION
s
s
0
50
1m
s
us
10
us
100
us
DC
IC MAX. (DC)
1
3m
100ms
m
10
IC[A], COLLECTOR CURRENT
0.1
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0.1
24
20
16
12
8
4
0
0.01
1
10
100
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
1000
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A1, June 2001
KSC3233
Package Demensions
I-PAK
2.30 ±0.20
6.60 ±0.20
5.34 ±0.20
2.30TYP
[2.30±0.20]
±0.20
±0.30
16.10
±0.20
±0.30
9.30
0.76 ±0.10
1.80
0.80
MAX0.96
0.50 ±0.10
6.10
±0.20
(0.50)
0.70
(4.34)
±0.10
0.60
±0.20
(0.50)
2.30TYP
[2.30±0.20]
0.50 ±0.10
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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OPTOLOGIC™
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QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
Stealth™
SuperSOT™-3
SuperSOT™-6
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SyncFET™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2. A critical component is any component of a life support
1. Life support devices or systems are devices or systems
device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body,
reasonably expected to cause the failure of the life support
or (b) support or sustain life, or (c) whose failure to perform
device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3