KSC5367F KSC5367F High Voltage and High Reliability • High speed Switching • Wide Safe Operating Area • High Collector-Base Voltage TO-220F 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 1600 Units V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 12 V IC Collector Current (DC) 3 A ICP *Collector Curren (Pulse) 6 A IB Base Current (DC) 2 A IBP *Base Current (Pulse) 4 A PC Power Dissipation(TC=25°C) 40 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C * Pulse Test: Pulse Width=5ms, Duty Cycle≤10% Thermal Characteristics TC=25°C unless otherwise noted Symbol Rθjc Thermal Resistance Rθja ©2002 Fairchild Semiconductor Corporation Characteristics Junction to Case Junction to Ambient Rating 3.1 Unit °C/W 62.5 Rev. B1, December 2002 Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC = 0.5mA, IE = 0 Min. 1600 Typ. - Max. - Units V V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 800 - - BVEBO Emitter-Base Breakdown Voltage IC =0.5mA, IC = 0 12 - - V ICBO Collector Cut-off Current VCB = 1,600V, IE = 0 - - 20 µA IEBO Emitter Cut-off Current VEB = 12V, IC = 0 - - 20 µA hFE1 hFE2 DC Current Gain VCE = 3V, IC = 0.4A VCE = 10V, IC = 5mA 12 8 - 35 - VCE(sat) Collector-Emitter Saturation Voltage IC = 250mA, IB = 25mA IC = 500mA, IB = 50mA IC = 1A, IB = 0.2A - - 2.5 4.0 2.5 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 500mA, IB = 50mA - - 1.5 V Cob Output Capacitance VCB =10V, IE = 0, f = 1MHz - 40 - pF VCC = 125V, IC = 0.5A IB1 = 42mA, IB2 = -333mA RL = 250Ω - tON Turn On Time tSTG Storage Time tF Falling Time tON Turn On Time tSTG Storage Time tF Falling Time ©2002 Fairchild Semiconductor Corporation VCC = 250V, IC = 1A IB1 = 0.2A, IB2 = -0.4A RL = 250Ω - 0.5 µs - 2.2 µs - - 0.5 µs - - 0.5 µs - - 4.0 µs - - 0.5 µs Rev. B1, December 2002 KSC5367F Electrical Characteristics TC=25°C unless otherwise noted KSC5367F Typical Characteristics 5 100 4 IB = 1.4A IB = 1.2A IB = 1A IB = 0.8A IB = 0.6A 3 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT VCE = 5V VCE = 3V IB = 0.4A 2 IB = 0.2A 1 0 0 2 4 6 8 10 1 0.1 0.01 10 0.1 10 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. DC current Gain 10 10 VCC=250V IC=5IB1=-2.5IB1 IC = 10IB 1 tSTG tON[µs], tSTG[µs], tF[µs], TIME VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1 VBE(sat) VCE(sat) 0.1 0.01 0.01 0.1 1 1 tF tON 0.1 0.01 0.01 10 0.1 IC[A], COLLECTOR CURRENT 1 10 IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Switching Time VCC=125V IC=0.5A 1IB1=42mA 10 IC[A], COLLECTOR CURRENT tON[µs], tSTG[µs], tF[µs], TIME 10 tSTG 1 tON tF 0.1 0.01 0.01 PULSE 100µs DC 1ms 1 5ms 0.1 0.01 1E-3 0.1 1 IC[A], COLLECTOR CURRENT Figure 5. Switching Time ©2002 Fairchild Semiconductor Corporation 10 1 10 100 1000 VCE[V], COLLECTOR EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. B1, December 2002 KSC5367F Typical Characteristics (Continued) 60 10 PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT IB2=200mA L=200µH 1 0.1 50 40 30 20 10 0 0.01 100 1000 10000 VCE[V], COLLECTOR EMITTER VOLTAGE Figure 7. Reverse Bias Safe Operating Area ©2002 Fairchild Semiconductor Corporation 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 8. Power Derating Rev. B1, December 2002 KSC5367F Package Dimensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1