ETC 1N6382/D

1N6382 - 1N6389 Series
(ICTE-10C - ICTE-36C,
MPTE-8C - MPTE-45C)
1500 Watt Peak Power
Mosorb Zener Transient
Voltage Suppressors
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Bidirectional*
Mosorb devices are designed to protect voltage sensitive
components from high voltage, high–energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetic axial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.
AXIAL LEAD
CASE 41A
PLASTIC
Specification Features:
•
•
•
•
•
•
Working Peak Reverse Voltage Range – 8 V to 45 V
Peak Power – 1500 Watts @ 1 ms
ESD Rating of Class 3 (>16 KV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5 µA Above 10 V
Response Time is Typically < 1 ns
L
MPTE
–xxC
1N
63xx
YYWW
L
ICTE
–xxC
YYWW
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
L = Assembly Location
MPTE–xxC = ON Device Code
ICTE–xxC = ON Device Code
1N63xx = JEDEC Device Code
YY = Year
WW = Work Week
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16″ from the case for 10 seconds
POLARITY: Cathode band does not imply polarity
MOUNTING POSITION: Any
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1.)
@ TL ≤ 25°C
PPK
1500
Watts
Steady State Power Dissipation
@ TL ≤ 75°C, Lead Length = 3/8″
Derated above TL = 75°C
PD
5.0
Watts
20
mW/°C
RJL
20
°C/W
TJ, Tstg
– 65 to
+175
°C
Thermal Resistance, Junction–to–Lead
Operating and Storage
Temperature Range
1. Nonrepetitive current pulse per Figure 4 and derated above TA = 25°C
per Figure 2.
ORDERING INFORMATION
Device
Package
Shipping
MPTE–xxC
Axial Lead
500 Units/Box
MPTE–xxCRL4
Axial Lead
1500/Tape & Reel
ICTE–xxC
Axial Lead
500 Units/Box
ICTE–xxCRL4
Axial Lead
1500/Tape & Reel
1N63xx
Axial Lead
500 Units/Box
1N63xxRL4
Axial Lead
1500/Tape & Reel
*Please see 1N6373 – 1N6381 (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45)
for Unidirectional Devices
 Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 0
1
Publication Order Number:
1N6382/D
1N6382 – 1N6389 Series (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)
ELECTRICAL CHARACTERISTICS
I
(TA = 25°C unless otherwise noted)
Symbol
IPP
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
VBR
IT
VBR
IT
VC VBR VRWM IR
IR V
RWM VBR VC
IT
Working Peak Reverse Voltage
V
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
IPP
Test Current
Bi–Directional TVS
Maximum Temperature Variation of VBR
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Breakdown Voltage
VRWM
(Note 2.)
IR @
VRWM
(Volts)
(µA)
Min
Nom
8.0
25
9.4
1N6383
MPTE–10C
10
2.0
1N6384
(MPTE–12C)
1N6384
MPTE–12C
12
1N6385
(MPTE–15C)
1N6385
MPTE–15C
1N6386
(MPTE–18C)
1N6386
MPTE–18C
1N6387
(MPTE–22C)
1N6387
MPTE–22C
1N6388
(MPTE–36C)
JEDEC
Device
(ON Device)
Device
Marking
1N6382
(MPTE–8C)
1N6382
MPTE–8C
1N6383
(MPTE–10C)
VBR
(Note 3.) (Volts)
VC @ IPP (Note 4.)
@ IT
VC
IPP
Max
(mA)
(Volts)
–
–
1.0
11.7
–
–
2.0
14.1
–
15
2.0
17.6
18
2.0
22
1N6388
MPTE–36C
1N6389
(MPTE–45C)
VC (Volts) (Note 4.)
VBR
(A)
@ IPP
=1A
@ IPP
= 10 A
(mV/°C)
15
100
11.3
11.5
8.0
1.0
16.7
90
13.7
14.1
12
–
1.0
21.2
70
16.1
16.5
14
–
–
1.0
25
60
20.1
20.6
18
21.2
–
–
1.0
30
50
24.2
25.2
21
2.0
25.9
–
–
1.0
37.5
40
29.8
32
26
36
2.0
42.4
–
–
1.0
65.2
23
50.6
54.3
50
1N6389
MPTE–45C
45
2.0
52.9
–
–
1.0
78.9
19
63.3
70
60
ICTE–10C
ICTE–12C
ICTE–10C
ICTE–12C
10
12
2.0
2.0
11.7
14.1
–
–
–
–
1.0
1.0
16.7
21.2
90
70
13.7
16.1
14.1
16.5
8.0
12
ICTE–15C
ICTE–18C
ICTE–22C
ICTE–36C
ICTE–15C
ICTE–18C
ICTE–22C
ICTE–36C
15
18
22
36
2.0
2.0
2.0
2.0
17.6
21.2
25.9
42.4
–
–
–
–
–
–
–
–
1.0
1.0
1.0
1.0
25
30
37.5
65.2
60
50
40
23
20.1
24.2
29.8
50.6
20.6
25.2
32
54.3
14
18
21
26
NOTES:
2. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to
or greater than the dc or continuous peak operating voltage level.
3. VBR measured at pulse test current IT at an ambient temperature of 25°C and minimum voltage in VBR is to be controlled.
4. Surge current waveform per Figure 4 and derate per Figures 1 and 2.
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2
100
PPK , PEAK POWER (kW)
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 5
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ TA = 25°C
1N6382 – 1N6389 Series (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)
100
10
1
0.1µs
1µs
10µs
100µs
1 ms
80
60
40
20
0
10 ms
0
25
50
tP, PULSE WIDTH
Figure 2. Pulse Derating Curve
PEAK VALUE - IPP
100
3/8″
5
PULSE WIDTH (tP) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF IPP.
tr ≤ 10 s
3/8″
IPP, VALUE (%)
PD , STEADY STATE POWER DISSIPATION (WATTS)
Figure 1. Pulse Rating Curve
75
100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
4
3
HALF VALUE 50
IPP
2
2
tP
1
0
0
25
50
75
100 125 150 175
TL, LEAD TEMPERATURE (°C)
0
200
0
1
2
3
t, TIME (ms)
Figure 3. Steady State Power Derating
Figure 4. Pulse Waveform
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3
4
1N6382 – 1N6389 Series (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)
1.5KE6.8CA
through
1.5KE200CA
1N6373, ICTE-5, MPTE-5,
through
1N6389, ICTE-45, C, MPTE-45, C
200
100
50
20
10
5
1000
500
IT , TEST CURRENT (AMPS)
VBR(MIN)=6.0 to 11.7V
19V
42.4V
21.2V
TL=25°C
tP=10µs
2
1
VBR(NOM)=6.8 to 13V
20V
24V
TL=25°C
tP=10µs
200
43V
75V
100
50
20
180V
10
120V
5
2
1
0.3
0.5 0.7 1
2
3
5 7 10
20 30
∆VBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS)
0.3
0.5 0.7 1
2
3
5 7 10
20 30
∆VBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS)
Figure 5. Dynamic Impedance
1
0.7
0.5
0.3
DERATING FACTOR
IT , TEST CURRENT (AMPS)
1000
500
0.2
PULSE WIDTH
10 ms
0.1
0.07
0.05
1 ms
0.03
100 µs
0.02
0.01
0.1
10 µs
0.2
0.5
1
2
5
10
D, DUTY CYCLE (%)
20
50
Figure 6. Typical Derating Factor for Duty Cycle
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4
100
1N6382 – 1N6389 Series (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)
APPLICATION NOTES
RESPONSE TIME
circuit layout, minimum lead lengths and placing the
suppressor device as close as possible to the equipment or
components to be protected will minimize this overshoot.
Some input impedance represented by Zin is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitance
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 7.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 8. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. These devices have
excellent response time, typically in the picosecond range
and negligible inductance. However, external inductive
effects could produce unacceptable overshoot. Proper
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 6. Average power must be derated as the lead or
ambient temperature rises above 25°C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 6 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 µs pulse. However, when the derating factor for a
given pulse of Figure 6 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
TYPICAL PROTECTION CIRCUIT
Zin
LOAD
Vin
V
V
Vin (TRANSIENT)
VL
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
Vin (TRANSIENT)
VL
VL
Vin
td
tD = TIME DELAY DUE TO CAPACITIVE EFFECT
t
t
Figure 7.
Figure 8.
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5
1N6382 – 1N6389 Series (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)
OUTLINE DIMENSIONS
Transient Voltage Suppressors – Axial Leaded
1500 Watt Peak Power Mosorb
MOSORB
CASE 41A–02
ISSUE A
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD FINISH AND DIAMETER UNCONTROLLED
IN DIMENSION P.
D
K
DIM
A
B
D
K
P
P
P
A
K
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6
INCHES
MIN
MAX
0.360
0.375
0.190
0.205
0.038
0.042
1.00
----0.050
MILLIMETERS
MIN
MAX
9.14
9.52
4.83
5.21
0.97
1.07
25.40
----1.27
1N6382 – 1N6389 Series (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)
Notes
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7
1N6382 – 1N6389 Series (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)
Mosorb and Surmetic are trademarks of Semiconductor Components Industries, LLC.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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1N6382/D