2SB1427 Transistors Power transistor (−20V, −2A) 2SB1427 !External dimensions (Units : mm) !Features 1) Low saturation voltage, typically VCE(sat) = −0.5V at IC/IB = −1A / −50mA. 2) Excellent DC current gain characteristics. 4.0 1.5 0.4 1.0 2.5 1.6 0.5 4.5 (1) (2) 3.0 0.5 0.4 ROHM : MPT3 EIAJ : SC-62 1.5 1.5 0.4 (3) !Absolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage Collector-emitter voltage Parameter VCBO VCEO −20 −20 V V Emitter-base voltage VEBO −6 −2 V A(DC) −3 0.5 A(Pulse) ∗1 W ∗2 Collector current IC Collector power dissipation PC Junction temperature Storage temperature Tj 2 150 Tstg −55 ~ +150 °C °C ∗1 Single pulse, Pw=10ms ∗2 When mounted on a 40×40×0.7mm ceramic board. !Packaging specifications and hFE Type 2SB1427 Package hFE Marking MPT3 E Code Basic ordering unit (pieces) T100 1000 ∗ BJ ∗ Denotes hFE !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage BVCBO BVCEO −20 −20 − − − − V V IC = −50µA IC = −1mA Emitter-base breakdown voltage BVEBO −6 hFE − − − 390 − − − − − − −0.5 −0.5 −0.5 820 V µA µA V − IE = −50µA ICBO Transition frequency fT − 90 − Output capacitance Cob − 30 − MHz pF Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio ∗ Measured using pulse current. IEBO VCE(sat) Conditions VCB = −16V VEB = −5V IC/IB = −1A/−500mA VCE/IC = −6V/−0.5A VCE = −10V , IE = 10mA , f= 30MHz VCB = −10V , IE = 0A , f = 1MHz ∗ (1) Base (2) Collector (3) Emitter