ETC 2SK1528(L)

2SK1528(L), 2SK1528(S)
Silicon N-Channel MOS FET
ADE-208-1291 (Z)
1st. Edition
Mar. 2001
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
LDPAK
4
4
1 2
1
2
3
3
D
G
S
1. Gate
2. Drain
3. Source
4. Drain
2SK1528(L), 2SK1528(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
900
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
4
A
10
A
4
A
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
2
1
Channel dissipation
Pch*
60
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
2
2SK1528(L), 2SK1528(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
900
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±30
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±25 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
250
µA
VDS = 720 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
—
3.0
V
I D = 1 mA, VDS = 10 V
Static Drain to source on state
resistance
RDS(on)
—
3.0
4.0
Forward transfer admittance
|yfs|
1.7
2.7
—
S
I D = 2 A, VDS = 20 V *1
Input capacitance
Ciss
—
740
—
pF
VDS = 10 V, VGS = 0,
Output capacitance
Coss
—
305
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
150
—
pF
Turn-on delay time
t d(on)
—
15
—
ns
I D = 2 A, VGS = 10 V,
Rise time
tr
—
60
—
ns
RL = 15
Turn-off delay time
t d(off)
—
100
—
ns
Fall time
tf
—
80
—
ns
Body to drain diode forward
voltage
VDF
—
0.9
—
V
I F = 4 A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
800
—
ns
I F = 4 A, VGS = 0,
diF/dt = 100 A/µs
Note:
I D = 2 A, VGS = 10 V *1
1. Pulse test
See characteristic curves of 2SK1340.
3
2SK1528(L), 2SK1528(S)
Power vs. Temperature Derating
Maximum Safe Operation Area
50
20
20
ar
ea
10
10
)
2
1
(o
n
5
PW
S
40
10
O
is per
lim at
ite ion
d in
by th
R is
D
Drain Current ID (A)
Channel Dissipation Pch (W)
60
D
C
=
O
1
10
pe
m
tio
n
0.5
0.2
(1
Sh
ot
(T
C
µs
s
s
ra
0
m
µs
=
)
25
°C
)
0.1
Ta = 25°C
0.05
Normalized Transient Thermal Impedance γS (t)
0
4
50
100
Case Temperature TC (°C)
150
1
3
10
30
100 300 1,000
Drain to Source Voltage VDS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
TC = 25°C
D=1
1.0
0.5
0.3
0.2
θch–c (t) = γS (t) · θch–c
θch–c = 2.08°C/W, TC = 25°C
0.1
0.1
0.05
PDM
0.02
0.03 0.01
0.01
10 µ
e
uls
P
hot
T
1S
100 µ
1m
10 m
Pulse Width PW (s)
100 m
PW
1
D = PW
T
10
2SK1528(L), 2SK1528(S)
Package Dimensions
As of January, 2001
Unit: mm
2.54 ± 0.5
(1.4)
2.54 ± 0.5
11.3 ± 0.5
10.0
1.27 ± 0.2
0.2
0.86 +– 0.1
0.76 ± 0.1
11.0 ± 0.5
1.2 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
10.2 ± 0.3
2.59 ± 0.2
0.4 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
LDPAK (L)
—
—
1.4 g
5
2SK1528(L), 2SK1528(S)
As of January, 2001
Unit: mm
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.3
3.0 +– 0.5
1.27 ± 0.2
1.2 ± 0.2
7.8
7.0
(1.5)
0.2
0.1 +– 0.1
2.2
0.4 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
6
1.7
7.8
6.6
1.3 ± 0.15
0.3
10.0 +– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
LDPAK (S)-(1)
—
—
1.3 g
2SK1528(L), 2SK1528(S)
As of January, 2001
Unit: mm
(1.5)
7.8
7.0
1.7
7.8
6.6
1.3 ± 0.2
0.3
10.0 +– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
0.2
0.1 +– 0.1
2.2
1.2 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.3
5.0 +– 0.5
1.27 ± 0.2
0.4 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
LDPAK (S)-(2)
—
—
1.35 g
7
2SK1528(L), 2SK1528(S)
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8