Schottky Barrier Diodes for Stripline, Microstrip Mixers and Detectors Technical Data 5082-2207/09 5082-2765/85 5082-2774/94 Features Outline C2 Package Characteristics • Small Size • Low Noise Figure 6 dB Typical at 9 GHz • Rugged Design • High Uniformity • High Burnout Rating 1 W RF Pulse Power Incident • Both Medium and Low Barrier Available CP = 0.055 pF These diodes are designed for microstrip and stripline use. The kovar leads provide good continuity of transmission line impedance to the diode. Outline C2 is a plastic on ceramic package. Outline H2 has a metal ceramic hermetic seal. The ceramic is alumina. Metal parts are gold plated kovar. Description/Applications This family consists of medium barrier and low barrier beam lead diodes mounted in easily handled carrier packages. Low barrier diodes provide optimum noise figure at low local oscillator drive levels. Medium barrier diodes provide a wider dynamic range for lower distortion mixer designs. Application Note 976 presents design techniques for an X-Band mixer. Note: For new designs, the HSMS-286X and HSMS-820X series of surface mount microwave diodes are recommended. ANGLE CUT 30-50° ALTERNATE 0.13 (.005) DIA. HOLE 1.5 (0.06) FROM END CATHODE 0.46 (0.018) 0.30 (0.012) 3.81 (0.150) MIN. 1.40 (0.055) 1.14 (0.045) SQUARE 1.27 (0.050) MAX. 0.36 (0.014) MAX. 0.10 (0.004) TYP. DIMENSIONS IN MILLIMETERS AND (INCHES). Outline H2 The hermetic package, outline H2, is capable of passing many of the environmental tests of MIL-STD750. The applicable solderability test is reference 2031.1: 260°C, 10␣ seconds. CP = 0.175 pF 2.59 (0.102) 2.06 (0.081) LID DIA. CATHODE 0.58 (0.023) 0.43 (0.017) 2.64 (0.104) 2.34 (0.092) 3.30 (0.130) SQUARE MIN. 0.20 (0.008) 0.10 (0.004) 0.89 (0.035) 0.64 (0.025) 0.18 (0.007) KOVAR LEADS, Au PLATED 0.08 (0.003) DIMENSIONS IN MILLIMETERS AND (INCHES). 3-57 5965-8846E Maximum Ratings Operating and Storage Temperature Range C2 Packaged Diodes ................................................ -65°C to +150 °C H2 Packaged Diodes ................................................ -65°C to +175 °C Pulse Power Incident at TCASE = 25°C ............................................... 1 W (1 µs pulse, Du = 0.001) CW Power Dissipation at TCASE = 25°C (Measured in an infinite heat sink) ......................................... 125 mW Derate linearly to zero at maximum operating temperature. Diode Mounting Temperature in Packages C2 .................................................................... 235°C for 10 sec max. H2 .................................................................... 260°C for 10 sec max. Peak Inverse Voltage ......................................................................... 4 V These diodes are ESD sensitive. Handle with care to avoid static discharge through the diode. RF Electrical Specifications at TA = 25°C Barrier Maximum Noise Figure NF (dB) Low Low 6.0 6.5 150 350 2207 2209 Medium Medium 6.0 6.5 200 2774 2794 Low Low 6.0 6.5 150 Part Number 5082- Test Freq. (GHz) 2765 2785 9.375 IF Impedance ZIF (Ω) Min. Max. Package Typical Junction Capacitance Cj (pF) 1.5:1 2.0:1 Hermetic H2 0.18 400 1.5:1 2.0:1 Broadband C2 350 1.5:1 2.0:1 Maximum SWR DC Load Resistance = 0 Ω L.O. Power = 1 mW IF = 30 MHz, 1.5 dB NF Test Conditions V=0 *Minimum batch size 20 units. Typical Detector Characteristics at TA = 25°C Medium Barrier and Low Barrier (DC Bias) Parameter Symbol Typical Value Units Test Conditions Tangential Sensitivity TSS -54 dBm Voltage Sensitivity γ 6.6 mV/µW Video Resistance RV 1400 Ω 20 µA Bias, RL = 100 KΩ Pin = - 40 dBm Video Bandwidth = 2 MHz f = 10 GHz Parameter Symbol Typical Value Units Test Conditions Tangential Sensitivity TSS -44 dBm Voltage Sensitivity γ 10 mV/µW Video Resistance RV 1.8 ΜΩ Zero Bias, RL = 10 MΩ Pin = - 30 dBm Video Bandwidth = 2 MHz f = 10 GHz Low Barrier (Zero Bias) 3-58 SPICE Parameters Parameter Units 5082-2207 5082-2209 5082-2765 5082-2774 5082-2785 5082-2794 BV V 5 5 CJ0 pF 0.20 0.20 EG eV 0.69 0.69 IBV A 10E-5 10E-5 IS A 3 x 10E - 10 4 x 10E - 8 1.08 1.08 N RS Ω 5 6 PB V 0.65 0.5 PT 2 2 M 0.5 0.5 Typical Parameters 100 100 FORWARD CURRENT (mA) 10 1 0.1 0.6 0.8 0.01 1.0 0 0.2 FORWARD VOLTAGE (V) 0.4 Figure 1. Typical Forward Characteristics for Medium Barrier Diodes. 3. 0 0.2 10.0 .0 3.0 10 9 10 0 10 11 0 3. 2.0 1.0 0. 2.0 5 12 GHz 1.0 0. 1.0 0.2 0.2 5. 11 12 GHz .0 8 10 10 0 5. 50 150 µA 10.0 .0 5.0 3.0 2.0 1.0 0.5 0.2 20 10 9 7 2 5.0 0 .0 3 mA 5 0.2 5. 2 6 3 0.5 1.5 mA 1 mA 8 5 3. 0 2.0 7 4 2.0 1.0 1.0 6 5 3 0.2 5 0.8 Figure 2. Typical Forward Characteristics for Low Barrier Diodes. 0. 5 0. 4 0.6 FORWARD VOLTAGE (V) 2.0 0.4 0.1 0 0.2 1 3. 0 10 0 0.01 +125°C +25°C -55°C 5. FORWARD CURRENT (mA) +125°C +25°C -55°C Figure 3. Typical Admittance Characteristics, 5082-2765 with Self Bias. Figure 4. Typical Admittance Characteristics, 5082-2765 with External Bias. 3-59 3. 0 1 10 0.2 0 11 0 3. 2.0 0. 5 12 GHz 1.0 1.0 2.0 0. 5 Figure 6. Typical Admittance Characteristics 5082-2785 with External Bias. 1.0 1.0 Figure 5. Typical Admittance Characteristics 5082-2785 with Self Bias. 0 0 5. 0 2.0 0. 1.0 1.0 0. 2.0 5 5 3. 1.0 1.0 3. 0 0 3. 1 11 12 0 1.0 1.0 2.0 0. 5 2.0 5 3. 0. 10.0 0 0. 10 3. Figure 9. Typical Admittance Characteristics, 5082-2209 and 5082-2794 with Self Bias. 5.0 3.0 2.0 1.0 0.2 10.0 .0 10 5.0 2.0 3.0 1.0 0.5 9 0 0.2 .0 10 8 0.2 0 0.2 150 µA 5. 6 7 5. 12 GHz 3 2 GHz 20 50 0.5 .0 11 0 4 5 10 10 3 mA 0.2 0 5. 0 9 3 5. 8 4 2 1 1.5 2.0 2.0 5 7 10.0 0 3. Figure 8. Typical Admittance Characteristics, 5082-2207 and 5082-2774 with External Bias. 5 0. 0. 0.2 6 5.0 3.0 0 5. Figure 7. Typical Admittance Characteristics, 5082-2207 and 5082-2774 with Self Bias. 5 1 1 0.2 0 0. 0 0. 12 GHz 12 GHz 0.2 .0 10 10 2.0 0.2 10.0 5.0 150 µA 0.5 .0 10 11 0 5. 2 20 50 1.0 0 3.0 2.0 1.0 0.2 5. 10 0.5 0.2 2 1 1.5 3 mA 8 3. 0 9 3 6 4 3. 8 2.0 5 5 2.0 0. 0. 4 0.2 7 0 10.0 0. 1 9 5. 11 12 GHz 6 5.0 2.0 3.0 1.0 0.5 0.2 0 10.0 0. 5.0 2.0 3.0 1.0 0.2 5 .0 10 150 µA 0 0.5 10 8 3. 0.2 .0 10 9 0 5. 2 20 50 0 3 mA 0.2 0 5. 8 1.5 7 3 2 1 6 5. 7 5 4 3. 0 2.0 5 6 3 0.2 0. 5 0. 5 4 2.0 1.0 1.0 Typical Parameters, continued Figure 10. Typical Admittance Characteristics, 5082-2209 and 5082-2794 with External Bias. 3-60 Typical Parameters, continued 50 Ω PPO STRIPLINE 1/8 INCH GROUNDPLANE SPACING DEVICE UNDER TEST CATHODE GROUNDED NOISE FIGURE (dB) 7.5 "A" 7.0 PPO AIR GROUND 6.5 4.1 (0.16) 6.0 10.0 (0.40) PACKAGE C2 5.5 1 3 5 7 9 11 13 15 H2 FREQUENCY (GHz) Figure 11. Typical Noise Figure vs. Frequency for 5082-2209, -2794. DIMENSION "A" 1.91 ± 0.05 (0.075 ± 0.002) 2.67 ± 0.05 (0.105 ± 0.002) Figure 12. Admittance Test Circuit. MODEL FOR H2 DIODES RJ 14.5 nH 46.9 Ω 0.320 (0.0126) εEFF. = 6.37 0.435 nH CJ 47.6 Ω 0.775 (0.0305) εEFF. = 6.37 0.085 pF DIMENSIONS IN MILLIMETERS (INCHES) 1 mA Rect. Current 20 µA Ext. Bias Symbol 5082-2765 5082-2765 Units Junction Resistance RJ 258 545 Ω Junction Capacitance CJ 0.255 0.302 pF Parameter MODEL FOR C2 DIODES 14.5 nH 67.0 Ω 0.318 (0.0125) εEFF. = 6.37 RJ 0.53 nH CJ 67.0 Ω 0.318 (0.0125) εEFF. = 6.37 0.065 pF DIMENSIONS IN MILLIMETERS (INCHES) Parameter Symbol 1 mA Rect. Current 20 µA Ext. Bias 5082-2207, 5082-2774 5082-2207, 5082-2774 Units Junction Resistance RJ 338 421 Ω Junction Capacitance CJ 0.189 0.195 pF 3-61