61096 • • OPTOELECTRONIC PRODUCTS DIVISION Applications: Features: • • Mii GENERAL PURPOSE (NPN) TRANSISTOR (2N2222A) Hermetically sealed Rugged package-able to withstand high acceleration load TO-18 package MIL-PRF-19500 screening available • • • • Analog Switches Signal Conditioning Small Signal Amplifiers High Density Packaging DESCRIPTION The 61096 is a hermetically sealed general purpose switching transistor in a TO-18 package. This rugged package is able to withstand high acceleration loads and is ideal for designs where durability and device weight are important requirements. This device is available custom binned to customer specifications or screened to MIL-PRF-19500. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage .............................................................................................................................................................. 75V Collector-Emitter Voltage ........................................................................................................................................................... 50V Emitter-Collector Voltage ............................................................................................................................................................. 6V Continuous Collector Current................................................................................................................................................ 800mA Power Dissipation (Derate at the rate of 3.33 mW/°C above 25°C) ..................................................................................500mW Maximum Junction Temperature ......................................................................................................................................... +200°C Operating Temperature (See part selection guide for actual operating temperature) .........................................-65°C to +200°C Storage Temperature .............................................................................................................................................-65°C to +200°C Lead Soldering Temperature (vapor phase reflow for 30 seconds) ..................................................................................... 215°C Package Dimensions Schematic Diagram COLLECTOR Ø0.100 [Ø2.54] BASE 3 3 C 2 0.048 [1.22] 0.028 [0.71] 1 EMITTER 45° [1.17] 0.046 [0.91] 0.036 1 2 0.230Ø (5.84) 0.209Ø (5.31) 3 LEADS 0.195Ø (4.95) 0.021Ø [0.53] 0.016Ø [0.41] 0.178Ø (4.52) 0.210 [5.33] 0.170 [4.32] 0.030 [0.76)] MAX 0.500Ø ([12.70] MAX 0.750Ø [19.05] MIN DIMENSIONS ARE IN INCHES (MILLIMETERS) MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E.Walnut Str., Garland, TX 75040 • (972)272-3571 • Fax (972)487-6918 www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM E B 61096 SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR (TYPE 2N2222A) OPTICAL/ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified. PARAMETER SYMBOL MIN BVCBO 75 Collector-Emitter Breakdown Voltage BVCEO Emitter-Base Breakdown Voltage BVEBO Collector-Base Breakdown Voltage Collector-Base Cutoff Current UNITS TEST CONDITIONS V IC = 10µA, IE = 0 50 V IC = 10mA, IB = 0µA 6 V IC = 0, IE = 10µA 10 nA VCB = 60V, IE = 0 10 µA VCB = 60V, IE = 0, TA = 150°C ICBO MAX NOTE Collector-Emitter Cutoff Current ICES 50 nA VCE = 50V Emitter-Base Cutoff Current IEBO 10 nA VEB = 4.0V, IC = 0 - VCE = 10V, IC = 0.1mA - VCE = 10V, IC = 1mA - VCE = 10V, IC = 10mA - VCE = 10V, IC = 150mA 1 30 - VCE = 10V, IC = 500mA 1 35 - VCE = 10V, IC = 1mA @ -55°C 0.30 V IC = 150mA, IB = 15mA 1 1.0 V IC = 500, IB = 50mA 1 1.20 V IC = 150mA, IB = 15mA 1 2.0 V IC = 500mA, IE = 50mA 1 50 hfe1 Forward-Current Transfer Ratio 75 Forward-Current Transfer Ratio 325 100 100 Collector-Emitter Saturation Voltage VCE (SAT) Base-Emitter Saturation Voltage VBE (SAT) 0.6 300 SMALL-SIGNAL CHARACTERISTICS Small Signal Forward Current Transfer Ratio hfe 50 - Small Signal Forward Current Transfer Ratio hfe 2.5 - Open Circuit Output Capacitance VCE = 10V, IC = 1mA, f = 1kHz VCE = 20V, IC =20mA, f = 100kHz COBO 8 pF VCB = 10V, 100kHz, < f < 1 MHz CIBO 25 pF VEB = 0.5 V, 100kHz, < f < 1 MHz Turn-On Time ton 35 ns VCC = 30V, IC = 150mA, Turn-Off Time toff 300 ns VCC = 30V, IC = 150mA, Input Capacitance (Output Open Capacitance) IB1 = 15mA IB1 = IB2 = 15mA NOTES: Pulse width < 300µs, duty cycle < 2.0%. 1. RECOMMENDED OPERATING CONDITIONS: PARAMETER Bias Voltage-Collector/Emitter Collector-Emitter Voltage SYMBOL MIN MAX UNITS IC 10 150 mA VCE 5 20 V SELECTION GUIDE PART NUMBER 61096-001 61096-002 61096-101 61096-102 61096-103 PART DESCRIPTION 2N2222A PNP transistor, commercial version 2N2222A PNP transistor, JAN level screening 2N2222A PNP transistor, JANTX level screening 2N2222A PNP transistor, JANTXV level screening 2N2222A PNP transistor, JANS level screening MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E.Walnut Str., Garland, TX 75040 • (972)272-3571 • Fax (972)487-6918 www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM