ETC 74HC1G125GW/T1

INTEGRATED CIRCUITS
DATA SHEET
74HC1G125; 74HCT1G125
Bus buffer/line driver; 3-state
Product specification
File under Integrated Circuits, IC06
1998 Nov 10
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
FEATURES
74HC1G125; 74HCT1G125
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns.
• Wide operating voltage:
2.0 to 6.0 V
TYP.
• Symmetrical output impedance
• High noise immunity
SYMBOL
PARAMETER
UNIT
HC1G
tPHL/tPLH
propagation delay
inA to outY
• Balanced propagation delays
CI
input capacitance
• Very small 5 pins package
CPD
power dissipation
capacitance
• Low power dissipation
CONDITIONS
• Output capability: bus driver.
CL = 15 pF;
VCC = 5 V
notes 1 and 2
HCT1G
9
10
ns
1.5
1.5
pF
30
27
pF
Notes
DESCRIPTION
1. CPD is used to determine the dynamic power dissipation (PD in µW).
The 74HC1G/HCT1G125 is a
high-speed Si-gate CMOS device.
The 74HC1G/HCT1G125 provides
one non-inverting buffer/line driver
with 3-state output. The 3-state output
is controlled by the output enable
input (OE). A HIGH at OE causes the
output as assume a high-impedance
OFF-state.
The bus driver output currents are
equal compared to the
74HC/HCT125.
PD = CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
∑ (CL × VCC2 × fo) = sum of outputs.
2. For HC1G the condition is VI = GND to VCC.
For HCT1G the condition is VI = GND to VCC − 1.5 V.
PINNING
PIN
FUNCTION TABLE
See note 1.
INPUTS
SYMBOL
DESCRIPTION
1
OE
output enable input
2
inA
data input
OUTPUT
3
GND
ground (0 V)
OE
inA
outY
4
outY
data output
L
L
L
5
VCC
DC supply voltage
L
H
H
H
X
Z
Note
1. H = HIGH voltage level;
L = LOW voltage level;
X = don’t care;
Z = high-impedance OFF state.
1998 Nov 10
2
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
74HC1G125; 74HCT1G125
ORDERING INFORMATION
PACKAGES
OUTSIDE NORTH
AMERICA
74HC1G125GW
TEMPERATURE
RANGE
PINS
PACKAGE
MATERIAL
CODE
MARKING
−40 to +125 °C
5
SC-88A
plastic
SOT353
HM
5
SC-88A
plastic
SOT353
TM
74HCT1G125GW
handbook, halfpage
handbook, halfpage
OE 1
5 VCC
inA 2
GND
125
3
4
2
inA
1
OE
outY
4
outY
MNA118
MNA117
Fig.1 Pin configuration.
handbook, halfpage
Fig.2 Logic symbol.
handbook, halfpage
outY
inA
2
4
1
OE
OE
MNA119
MNA120
Fig.3 IEC logic symbol.
1998 Nov 10
Fig.4 Logic diagram.
3
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
74HC1G125; 74HCT1G125
RECOMMENDED OPERATING CONDITIONS
74HC1G04
SYMBOL
74HCT1G04
PARAMETER
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
CONDITIONS
MAX.
VCC
DC supply voltage
2.0
5.0
6.0
4.5
5.0
5.5
V
VI
input voltage
0
−
VCC
0
−
VCC
V
VO
output voltage
0
−
VCC
0
−
VCC
V
Tamb
operating ambient
temperature
−40
+25
+125
−40
+25
+125
°C
see DC and AC
characteristics
per device
tr, tf
input rise and fall times
except for Schmitt
trigger inputs
−
−
1000
−
−
−
ns
VCC = 2.0 V
−
−
500
−
−
500
ns
VCC = 4.5 V
−
−
400
−
−
−
ns
VCC = 6.0 V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
DC supply voltage
−0.5
+7.0
V
±IIK
DC input diode current
VI < −0.5 V or VI > VCC + 0.5 V; note 1
−
20
mA
±IOK
DC output diode current
VO < −0.5V or VO > VCC + 0.5 V; note 1
−
20
mA
±IO
DC output source or sink
current standard outputs
−0.5V < VO < VCC + 0.5 V; note 1
−
12.5
mA
±ICC
DC VCC or GND current for
types with standard outputs
note 1
−
25
mA
Tstg
storage temperature
−65
+150
°C
PD
power dissipation per package
200
mW
temperature range: −40 to +125 °C; note 2 −
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 55 °C the value of PD derates linearly with 2.5 mW/K.
1998 Nov 10
4
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
74HC1G125; 74HCT1G125
DC CHARACTERISTICS
Family 74HC1G
Additional type data to the recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Tamb (°C)
SYMBOL
−40 to +85
PARAMETER
MIN.
VIH
HIGH-level input
voltage
VOH
VOH
VOL
TYP.(1)
−40 to +125
MAX.
MIN.
1.2
−
1.5
−
3.15
2.4
−
3.15
−
3.2
−
4.2
−
LOW-level input voltage −
0.8
0.5
−
0.5
−
2.1
1.35
−
1.35
−
2.8
1.8
−
1.8
HIGH-level output
voltage; all outputs
1.9
2.0
−
1.9
−
4.4
4.5
−
4.4
−
5.9
6.0
−
5.9
−
HIGH-level output
voltage; standard
outputs
4.13
4.32
−
3.7
−
5.63
5.81
−
5.2
−
LOW-level output
voltage; all outputs
V
4.5
6.0
V
2.0
4.5
6.0
V
2.0
4.5
4.5
VI = VIH or VIL;
−IO = 2.0 mA
6.0
VI = VIH or VIL;
−IO = 2.6 mA
2.0
VI = VIH or VIL;
IO = 20 µA
0
0.1
−
0.1
0.1
−
0.1
4.5
−
0
0.1
−
0.1
6.0
0.33
−
0.4
−
0.16
0.33
−
0.4
II
input leakage current
−
−
1.0
−
1.0
ICC
quiescent supply
current
−
−
10
−
20
Note
1. All typical values are measured at Tamb = 25 °C.
5
VI = VIH or VIL:
−IO = 20 µA
6.0
V
0
0.15
OTHER
2.0
−
−
1998 Nov 10
VCC (V)
−
LOW-level output
voltage; standard
outputs
VOL
UNIT
MAX.
1.5
4.2
VIL
TEST CONDITIONS
V
V
4.5
VI = VIH or VIL;
IO = 2.0 mA
6.0
VI = VIH or VIL;
IO = 2.6 mA
µA
6.0
VI = VCC or GND
µA
6.0
VI = VCC or GND;
IO = 0
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
74HC1G125; 74HCT1G125
Family 74HCT1G
Additional type data to the recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Tamb (°C)
SYMBOL
TEST CONDITIONS
−40 to +85
PARAMETER
MIN.
TYP.(1)
−40 to +125
MAX.
MIN.
UNIT
VCC (V)
MAX.
OTHER
VIH
HIGH-level input
voltage
2.0
1.6
−
2.0
−
V
4.5 to 5.5
VIL
LOW-level input
voltage
−
1.2
0.8
−
0.8
V
4.5 to 5.5
VOH
HIGH-level output
voltage; all outputs
4.4
4.5
−
4.4
−
V
4.5
VI = VIH or VIL;
−IO = 20 µA
VOH
HIGH-level output
voltage; standard
outputs
4.13
4.32
−
3.7
−
V
4.5
VI = VIH or VIL;
−IO = 2.0 mA
VOL
LOW-level output
voltage; all outputs
−
0
0.1
−
0.1
V
4.5
VI = VIH or VIL;
IO = 20 µA
VOL
LOW-level output
voltage; standard
outputs
−
0.15
0.33
−
0.4
V
4.5
VI = VIH or VIL;
IO = 2.0 mA
II
input leakage current −
−
1.0
−
1.0
µA
5.5
VI = VCC or GND
ICC
quiescent supply
current
−
−
10.0
−
20
µA
5.5
VI = VCC or GND;
IO = 0
∆ICC
additional supply
current per input
−
−
500
−
850
µA
4.5 to 5.5
VI = VCC − 2.1;
IO = 0
Note
1. All typical values are measured at Tamb = 25 °C.
1998 Nov 10
6
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
74HC1G125; 74HCT1G125
AC CHARACTERISTICS
Type 74HC1G125
GND = 0 V; tr = tf ≤ 6.0 ns; CL = 50 pF.
Tamb (°C)
SYMBOL
−40 to +85
PARAMETER
MIN. TYP.(1)
tPHL/tPLH
tPZH/tPZL
tPHZ/tPLZ
TEST CONDITIONS
−40 to +125
MAX.
MIN.
UNIT
VCC (V)
MAX.
−
24
125
−
150
ns
2.0
−
10
25
−
30
ns
4.5
−
8
21
−
26
ns
6.0
3-state output
enable time
OE to outY
−
19
155
−
190
ns
2.0
−
9
31
−
38
ns
4.5
−
7
26
−
32
ns
6.0
3-state output
disable time
OE to outY
−
18
155
−
190
ns
2.0
−
12
31
−
38
ns
4.5
−
11
26
−
32
ns
6.0
propagation delay
inA to outY
WAVEFORMS
see Figs 5 and 7
see Figs 6 and 7
see Figs 6 and 7
Note
1. All typical values are measured at Tamb = 25 °C.
Type 74HCT1G125
GND = 0 V; tr = tf ≤ 6.0 ns; CL = 50 pF.
Tamb (°C)
SYMBOL
−40 to +85
PARAMETER
MIN.
TYP.(1)
TEST CONDITIONS
−40 to +125
MAX.
MIN.
UNIT
VCC (V)
MAX.
WAVEFORMS
tPHL/tPLH
propagation delay
inA to outY
−
11
30
−
36
ns
4.5
see Figs 5 and 7
tPZH/tPZL
3-state output
enable time
OE to outY
−
10
35
−
42
ns
4.5
see Figs 6 and 7
tPHZ/tPLZ
3-state output
disable time
OE to outY
−
11
31
−
38
ns
4.5
see Figs 6 and 7
Note
1. All typical values are measured at Tamb = 25 °C.
1998 Nov 10
7
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
74HC1G125; 74HCT1G125
AC WAVEFORMS
handbook, halfpage
VI
inA INPUT
VM(1)
GND
tPLH
tPHL
outY OUTPUT
VM(1)
MNA121
(1) HC1G VM = 50%; VI = GND to VCC;
HCT1G VM = 1.3 V; VI = GND to 3.0 V.
Fig.5
The input (inA) to output (outY) propagation
delays.
VI
handbook, full pagewidth
VM(1)
OE INPUT
GND
tPLZ
tPZL
VCC
OUTPUT
LOW-to-OFF
OFF-to-LOW
VM(1)
VOL +0.3 V
tPHZ
tPZH
VOH −0.3 V
OUTPUT
HIGH-to-OFF
OFF-to-HIGH
VM(1)
GND
output
enabled
output
disabled
output
enabled
MNA122
(1) HC1G VM = 50%; VI = GND to VCC;
HCT1G VM = 1.3 V; VI = GND to 3.0 V.
Fig.6 The 3-state enable and disable times.
1998 Nov 10
8
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
74HC1G125; 74HCT1G125
VCC
handbook, halfpage
PULSE
GENERATOR
VI
VO
RL = 1 kΩ S1
D.U.T.
VCC
open
CL
50 pF
RT
MNA123
Definitions for test circuit;
CL = load capacitance including jig and probe capacitance.
(See “AC characteristics”)
RT = termination resistance should be equal to the output
impedance Zo of the pulse generator.
RT = termination resistance should be equal to the output
impedance Zo of the pulse generator.
TEST
tPLH/tPHL
open
tPLZ/tPZL
VCC
tPHZ/tPZH
GND
Fig.7 Load circuitry for switching times.
1998 Nov 10
9
S1
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
74HC1G125; 74HCT1G125
PACKAGE OUTLINE
Plastic surface mounted package; 5 leads
SOT353
D
E
B
y
X
A
HE
5
v M A
4
Q
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E (2)
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT353
1998 Nov 10
REFERENCES
IEC
JEDEC
EIAJ
SC-88A
10
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
74HC1G125; 74HCT1G125
SOLDERING
Wave soldering
Introduction
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted IC’s, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering IC’s can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(order code 9398 652 90011).
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Reflow soldering
Reflow soldering techniques are suitable for all SO
packages.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Repairing soldered joints
Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
1998 Nov 10
11
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
74HC1G125; 74HCT1G125
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Nov 10
12
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
74HC1G125; 74HCT1G125
NOTES
1998 Nov 10
13
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
74HC1G125; 74HCT1G125
NOTES
1998 Nov 10
14
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
74HC1G125; 74HCT1G125
NOTES
1998 Nov 10
15
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Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Printed in The Netherlands
245106/00/01/pp16
Date of release: 1998 Nov 10
Document order number:
9397 750 03693