ETC P2N2907A/D

ON Semiconductor
Amplifier Transistor
P2N2907A
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
–60
Vdc
Collector–Base Voltage
VCBO
–60
Vdc
Emitter–Base Voltage
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
–600
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
TJ, Tstg
–55 to +150
°C
Operating and Storage Junction
Temperature Range
1
2
CASE 29–11, STYLE 17
TO–92 (TO–226AA)
COLLECTOR
1
THERMAL CHARACTERISTICS
Characteristic
3
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
200
°C/W
Thermal Resistance, Junction to Case
RJC
83.3
°C/W
2
BASE
3
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage(1)
(IC = –10 mAdc, IB = 0)
V(BR)CEO
–60
—
Vdc
Collector–Base Breakdown Voltage
(IC = –10 Adc, IE = 0)
V(BR)CBO
–60
—
Vdc
Emitter–Base Breakdown Voltage
(IE = –10 Adc, IC = 0)
V(BR)EBO
–5.0
—
Vdc
Collector Cutoff Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
ICEX
—
–50
nAdc
Collector Cutoff Current
(VCB = –50 Vdc, IE = 0)
(VCB = –50 Vdc, IE = 0, TA = 150°C)
ICBO
—
—
–0.01
–10
Emitter Cutoff Current
(VEB = –3.0 Vdc)
IEBO
—
–10
nAdc
Collector Cutoff Current
(VCE = –10 V)
ICEO
—
–10
nAdc
Base Cutoff Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
IBEX
—
–50
nAdc
OFF CHARACTERISTICS
µAdc
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
 Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 1
1
Publication Order Number:
P2N2907A/D
P2N2907A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Symbol
Min
Max
75
100
100
100
50
—
—
—
300
—
—
—
–0.4
–1.6
—
—
–1.3
–2.6
fT
200
—
MHz
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
8.0
pF
Input Capacitance
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
—
30
pF
ton
—
50
ns
td
—
10
ns
tr
—
40
ns
toff
—
110
ns
ts
—
80
ns
tf
—
30
ns
Characteristic
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –0.1 mAdc, VCE = –10 Vdc)
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –150 mAdc, VCE = –10 Vdc)(1)
(IC = –500 mAdc, VCE = –10 Vdc)(1)
hFE
—
Collector–Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VCE(sat)
Base–Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VBE(sat)
Vdc
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(1), (2)
(IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz)
SWITCHING CHARACTERISTICS
Turn–On Time
Delay Time
(VCC = –30
30 Vdc,
Vd IC = –150
150 mAdc,
Ad
IB1 = –15 mAdc) (Figures 1 and 5)
Rise Time
Turn–Off Time
Storage Time
(VCC = –6.0
6 0 Vdc,
Vd IC = –150
150 mAdc,
Ad
IB1 = IB2 = –15 mAdc) (Figure 2)
Fall Time
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
INPUT
Zo = 50 Ω
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
-30 V
200
1.0 k
0
50
-16 V
INPUT
Zo = 50 Ω
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
+15 V
-6.0 V
1.0 k
1.0 k
0
-30 V
50
37
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
1N916
200 ns
200 ns
Figure 1. Delay and Rise Time Test Circuit
Figure 2. Storage and Fall Time Test Circuit
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2
P2N2907A
TYPICAL CHARACTERISTICS
hFE , NORMALIZED CURRENT GAIN
3.0
VCE = -1.0 V
VCE = -10 V
2.0
TJ = 125°C
25°C
1.0
-55°C
0.7
0.5
0.3
0.2
-0.1
-0.2 -0.3
-0.5 -0.7 -1.0
-2.0
-3.0
-5.0 -7.0
-10
-20
-30
-50 -70 -100
-200 -300 -500
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 3. DC Current Gain
-1.0
-0.8
IC = -1.0 mA
-10 mA
-100 mA
-500 mA
-0.6
-0.4
-0.2
0
-0.005
-0.01
-0.02 -0.03 -0.05 -0.07 -0.1
-0.2
-0.3 -0.5 -0.7 -1.0
IB, BASE CURRENT (mA)
-2.0
-3.0
-20 -30
-5.0 -7.0 -10
-50
Figure 4. Collector Saturation Region
500
tr
100
70
50
300
VCC = -30 V
IC/IB = 10
TJ = 25°C
200
t, TIME (ns)
t, TIME (ns)
300
200
30
20
10
td @ VBE(off) = 0 V
7.0
5.0
3.0
-5.0 -7.0 -10
tf
100
70
50
30
t′s = ts - 1/8 tf
20
10
7.0
5.0
-5.0 -7.0 -10
2.0 V
-20 -30
-50 -70 -100
IC, COLLECTOR CURRENT
VCC = -30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
-200 -300 -500
Figure 5. Turn–On Time
-20 -30
-50 -70 -100
-200 -300 -500
IC, COLLECTOR CURRENT (mA)
Figure 6. Turn–Off Time
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3
P2N2907A
TYPICAL SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
10
10
8.0
8.0
NF, NOISE FIGURE (dB)
IC = -1.0 mA, Rs = 430 Ω
-500 µA, Rs = 560 Ω
-50 µA, Rs = 2.7 kΩ
-100 µA, Rs = 1.6 kΩ
6.0
4.0
Rs = OPTIMUM SOURCE RESISTANCE
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50
50
100
200
500 1.0 k 2.0 k
5.0 k 10 k
20 k
f, FREQUENCY (kHz)
Rs, SOURCE RESISTANCE (OHMS)
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
20
C, CAPACITANCE (pF)
IC = -50 µA
-100 µA
-500 µA
-1.0 mA
4.0
0
100
30
Ceb
10
7.0
5.0
Ccb
3.0
2.0
-0.1
6.0
2.0
f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
NF, NOISE FIGURE (dB)
f = 1.0 kHz
-0.2 -0.3 -0.5
-1.0
-2.0 -3.0 -5.0
-10
-20
-30
50 k
400
300
200
100
80
VCE = -20 V
TJ = 25°C
60
40
30
20
-1.0 -2.0
-5.0
-10
-20
-50
-100 -200
-500 -1000
REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 9. Capacitances
Figure 10. Current–Gain — Bandwidth Product
+0.5
-1.0
V, VOLTAGE (VOLTS)
-0.6
0
VBE(sat) @ IC/IB = 10
COEFFICIENT (mV/ ° C)
TJ = 25°C
-0.8
VBE(on) @ VCE = -10 V
-0.4
-0.2
-0.5 -1.0 -2.0 -5.0 -10 -20
-0.5
-1.0
-1.5
RVB for VBE
-2.0
VCE(sat) @ IC/IB = 10
0
-0.1 -0.2
RVC for VCE(sat)
-50 -100 -200
-2.5
-0.1 -0.2 -0.5 -1.0 -2.0
-500
-5.0 -10 -20
-50 -100 -200 -500
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltage
Figure 12. Temperature Coefficients
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4
P2N2907A
PACKAGE DIMENSIONS
TO–92 (TO–226)
CASE 29–11
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
K
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
SECTION X–X
1
N
N
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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5
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
P2N2907A
Notes
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6
P2N2907A
Notes
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7
P2N2907A
ON Semiconductor and
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P2N2907A/D