a 15 kV ESD Protected, 2.7 V to 3.6 V Serial Port Transceivers with Green Idle™ ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E* FEATURES Green Idle Power-Saving Mode Single 2.7 V to 3.6 V Power Supply Operates with 3 V Logic 0.1 F to 1 F Charge Pump Capacitors Low EMI Low Power Shutdown: 20 nA Full RS-232 Compliance 460 kbits/s Data Rate One Receiver Active in Shutdown (Two for ADM3310E) ESD >15 kV IEC 1000-4-2 on RS-232 I/Os (ADM33xxE) ESD >15 kV IEC 1000-4-2 on CMOS and RS-232 I/Os (ADM3307E) The active receiver can alert the processor, which can then take the ADM33xxE device out of the shutdown mode. APPLICATIONS Mobile Phone Handsets/Data Cables Laptop and Notebook Computers Printers Peripherals Modems PDAs/Hand-Held Devices/Palmtop Computers The ADM3315E is a low current version of the ADM3312E, with a 22 kΩ receiver input resistance that reduces the drive requirements of the DTE. Its main applications are PDAs, palmtop computers, and mobile phone data lump cables. GENERAL DESCRIPTION The ADM33xxE line of driver/receiver products is designed to fully meet the EIA-232 standard while operating with a single 2.7 V to 3.6 V power supply. The devices feature an on-board, charge pump, dc-to-dc converter, eliminating the need for dual power supplies. This dc-to-dc converter contains a voltage tripler and voltage inverter that internally generates positive and negative supplies from the input 3 V power supply. The dc-to-dc converter operates in Green Idle Mode, whereby the charge pump oscillator is gated ON and OFF to maintain the output voltage at ±7.25 V under varying load conditions. This minimizes the power consumption and makes these products ideal for battery-powered portable devices. The ADM33xxE devices are suitable for operation in harsh electrical environments and contain ESD protection up to ± 15 kV on their RS-232 lines (ADM3310E, ADM3311E, ADM3312E, and ADM3315E). The ADM3307E contains ESD protection up to ± 15 kV on all I/O lines (CMOS, RS-232, EN, and SD). A shutdown facility that reduces the power consumption to 66 nW is also provided. While in shutdown, one receiver remains active (two receivers active with ADM3310E), thereby allowing monitoring of peripheral devices. This feature allows the device to be shut down until a peripheral device begins communication. The ADM3307E contains five drivers and three receivers and is intended for mobile phone data lump cables and portable computing applications. The ADM3311E contains three drivers and five receivers and is intended for serial port applications on notebook/laptop computers. The ADM3310E is a low current version of the ADM3311E. This device also allows two receivers to be active in shutdown mode. The ADM3312E contains three drivers and three receivers and is intended for serial port applications, PDAs, mobile phone data lump cables, and other hand-held devices. The ADM33xxE devices are fabricated using CMOS technology for minimal power consumption. All parts feature a high level of overvoltage protection and latch-up immunity. All ADM33xxE devices are available in a 32-lead 5 mm × 5 mm LFCSP package and in a TSSOP package (ADM3307E, ADM3310E, and ADM3311E in a 28-lead TSSOP; ADM3312E and ADM3315E in a 24-lead TSSOP). The ADM3311E also comes in a 28-lead SSOP package. The ADM33xxE devices are ruggedized RS-232 line drivers/ receivers that operate from a single supply of 2.7 V to 3.6 V. Step-up voltage converters coupled with level shifting transmitters and receivers allow RS-232 levels to be developed while operating from a single supply. Features include low power consumption, Green Idle operation, high transmission rates, and compatibility with the EU directive on electromagnetic compatibility. This EM compatibility directive includes protection against radiated and conducted interference, including high levels of electrostatic discharge. All RS-232 (and CMOS, SD, and EN for ADM3307E) inputs and outputs are protected against electrostatic discharges (up to ± 15 kV). This ensures compliance with IEC 1000-4-2 requirements. These devices are ideally suited for operation in electrically harsh environments or where RS-232 cables are frequently being plugged/unplugged. They are also immune to high RF field strengths without special shielding precautions. Emissions are also controlled to within very strict limits. CMOS technology is used to keep the power dissipation to an absolute minimum, allowing maximum battery life in portable applications. *Protected by U.S.Patent No. 5,606,491. Green Idle is a trademark of Analog Devices, Inc. REV. F Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2002 ADM33xxE FUNCTIONAL BLOCK DIAGRAMS C1 C1 0.1F C2 0.1F C4 0.1F 0.1F VCC 0.1F CERAMIC C4 0.1F 10F TANTALUM ENABLE INPUT SHUTDOWN INPUT CMOS INPUTS1 T1IN EN V– SD GND 10F TANTALUM 0.1F CERAMIC V C3+ C2+ GND T1OUT T1 T2OUT T3IN T3 T3OUT EIA/TIA-232 OUTPUTS T4OUT T4 T5OUT T5 R1OUT R1 R1OUT R2OUT R2 R2OUT R3OUT R3 CMOS OUTPUTS EIA/TIA-232 INPUTS2 SHUTDOWN INPUT T1IN T1 T1OUT T2IN T2 T2OUT T3IN T3 EIA/TIA-232 OUTPUTS T3OUT R1OUT R1 R1IN R2OUT R2 R2IN R3OUT R3 R3IN R4OUT R4 R4IN R5 R5IN R5OUT R3OUT C5 0.1F SD C1+ CMOS INPUTS1 C3 0.1F VOLTAGE VCC TRIPLER / C3– INVERTER V– C2 3V TO 9V C1– EN ENABLE INPUT C5 0.1F T2 T5IN C2 0.1F VCC C3 0.1F T2IN T4IN CMOS OUTPUTS VOLTAGE C2+ VCC TRIPLER/ C3+ INVERTER C2 3V TO C1+ 9V C1 C3– V EIA/TIA-232 INPUTS2 ADM3310E/ ADM3311E ADM3307E NOTES 1INTERNAL 400 k PULL-UP RESISTOR ON EACH CMOS INPUT. 2INTERNAL 5 k PULL-DOWN RESISTOR ON EACH RS-232 INPUT. NOTES 1INTERNAL 400 k PULL-UP RESISTOR ON EACH CMOS INPUT. 2INTERNAL 5 k PULL-DOWN RESISTOR ON EACH RS-232 INPUT. C1 0.1F C4 0.1F C2 0.1F VCC 10F TANTALUM ENABLE INPUT CMOS OUTPUTS C3+ GND C3 0.1F VOLTAGE VCC TRIPLER / C3– INVERTER C2 3V TO 9V 0.1F CERAMIC CMOS INPUTS1 V C2+ V– EN C1– C1+ SD C5 0.1F SHUTDOWN INPUT T1IN T1 T1OUT T2IN T2 T2OUT T3IN T3 T3OUT R1OUT R1 R1IN R2OUT R2 R2IN R3 R3IN R3OUT EIA/TIA-232 OUTPUTS EIA/TIA-232 INPUTS2 ADM3312E/ ADM3315E NOTES 1INTERNAL 400 k PULL-UP RESISTOR ON EACH CMOS INPUT. 2INTERNAL 5 k (22 k FOR ADM3315E) PULL-DOWN RESISTOR ON EACH RS-232 INPUT. –2– REV. F ADM33xxE SPECIFICATIONS (V CC = 2.7 V to 3.6 V, C1–C5 = 0.1 F. All specifications TMIN to TMAX, unless otherwise noted.) Parameter Min Typ Max Unit Operating Voltage Range VCC Power Supply Current ADM3307E 2.7 3.3 3.6 V 0.75 0.75 0.45 1.5 4.5 1 mA mA mA 0.45 4.5 mA 0.35 0.85 35 mA mA Shutdown Supply Current 0.02 1 µA Input Pull-Up Current Input Leakage Current, SD, EN Input Logic Threshold Low, VINL 10 0.02 25 ±1 0.8 0.4 µA µA V V V V V TIN, EN, SHDN TIN, EN, SHDN; VCC = 2.7 V TIN, EN, SHDN IOUT = 1.6 mA IOUT = –200 µA µA µA EN = VCC, 0 V < ROUT < VCC EN = VCC, 0 V < ROUT < VCC +7.25 V No Load –7.25 V No Load +6.5 V No Load –6.5 V No Load ADM3311E, ADM3312E ADM3310E, ADM3315E ADM3310E, ADM3311E, ADM3312E, ADM3315E Input Logic Threshold High, VINH CMOS Output Voltage Low, VOL CMOS Output Voltage High, VOH CMOS Output Leakage Current ADM3307E ADM3310E, ADM3311E ADM3312E, ADM3315E 2.0 0.4 VCC – 0.6 Charge Pump Output Voltage, V+ ADM3307E, ADM3311E, ADM3312E Charge Pump Output Voltage, V– ADM3307E, ADM3311E, ADM3312E Charge Pump Output Voltage, V+ ADM3310E, ADM3315E Charge Pump Output Voltage, V– ADM3310E, ADM3315E EIA-232 Input Voltage Range EIA-232 Input Threshold Low EIA-232 Input Threshold High EIA-232 Input Hysteresis EIA-232 Input Resistance ADM3307E, ADM3310E, ADM3311E, ADM3312E ADM3315E REV. F ±1 ±5 0.04 0.05 –25 0.4 +25 V V V V 1.3 2.0 0.14 2.4 3 5 7 kΩ 14 22 31 kΩ –3– Test Conditions/Comments VCC = 3.0 V to 3.6 V; No Load VCC = 2.7 V to 3.6 V; No Load No Load; VCC = 3.0 V to 3.6 V; TA = 0°C to 85°C No Load; VCC = 2.7 V to 3.6 V; TA = – 40°C to +85°C VCC = 2.7 V to 3.6 V; No Load RL = 3 kΩ to GND on all TOUTS TIN = GND ADM33xxE SPECIFICATIONS (continued) Parameter Min Output Voltage Swing ADM3310E, ADM3315E ADM3307E, ADM3311E, ADM3312 Transmitter Output Resistance RS-232 Output Short Circuit Current Maximum Data Rate ADM3307E ADM3310E, ADM3311E, ADM3312E ADM3315E ± 5.0 ESD PROTECTION (I/O PINS) Max Unit Test Conditions/Comments ± 5.0 ± 5.5 V All Transmitter Outputs Loaded with 3 kΩ to Ground (VCC = 3.0 V) (VCC = 2.7 V) All Transmitter Outputs Loaded with 3 kΩ to Ground VCC = 0 V, VOUT = ± 2 V ± 6.4 ± 5.5 V V 300 ± 15 ± 60 Ω mA 250 720 kbps 460 920 kbps 250 460 kbps 3 0.3 0.17 100 300 500 18 Receiver Propagation Delay, TPHL, TPLH Receiver Output Enable Time, tER Receiver Output Disable Time, tDR Transmitter Propagation Delay, TPHL, TPLH Transition Region Slew Rate Typ ± 15 ± 15 ±8 1 RL = 3 kΩ to 7 kΩ, CL = 50 pF to 1000 pF, VCC = 2.7 V RL = 3 kΩ to 7 kΩ, CL = 50 pF to 1000 pF, VCC = 3.0 V RL = 3 kΩ to 7 kΩ, CL = 50 pF to 1000 pF, VCC = 3.0 V µs µs ns ns ns V/µs RL = 3 kΩ, CL = 1000 pF RL = 3 kΩ, CL = 50 pF to 1000 pF1 kV kV kV Human Body Model IEC 1000-4-2 Air Discharge IEC 1000-4-2 Contact Discharge2 CL = 150 pF CL = 150 pF; ADM3307E Only NOTES 1 Measured at +3 V to –3 V or –3 V to +3 V. 2 Includes CMOS I/O, SD, and EN for ADM3307E. Specification subject to change without notice. Thermal Impedance, θJA CP-32 LFCSP . . . . . . . . . . . . . . . . . . . . . . . . . . . 32.5°C/W RU-28 TSSOP . . . . . . . . . . . . . . . . . . . . . . . . . . . 68.0°C/W RU-24 TSSOP . . . . . . . . . . . . . . . . . . . . . . . . . . . 68.0°C/W RS-28 SSOP . . . . . . . . . . . . . . . . . . . . . . . . . . . . .76.0°C/W Operating Temperature Range Industrial (A Version) . . . . . . . . . . . . . . . . . . –40°C to +85°C Storage Temperature Range . . . . . . . . . . –65°C to +150°C Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . . 300°C ESD Rating (IEC 1000-4-2 Air) (RS-232 I/Os) . . . . . . . ± 15 kV ESD Rating (IEC 1000-4-2 Contact) (RS-232 I/Os) . . . . ± 8 kV ABSOLUTE MAXIMUM RATINGS* (TA = 25°C, unless otherwise noted) VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +4 V V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . (VCC – 0.3 V) to +9 V V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –9 V Input Voltages TIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6 V RIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 30 V Output Voltages TOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 15 V ROUT . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to (VCC + 0.3 V) Short Circuit Duration TOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous *This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. –4– REV. F ADM33xxE PRODUCT SELECTION GUIDE Rx No. Rx Active in SD Speed 5 3 1 1 Mbps RS-232 1.5 mA CMOS EN and SD 2.7 V to 3.6 V 3 5 2 460 kbps RS-232 0.85 mA 1 µA 2.7 V to 3.6 V 2.7 V to 3.6 V 2.7 V to 3.6 V 3 3 3 5 3 3 1 1 1 460 kbps RS-232 460 kbps RS-232 460 kbps RS-232 1 mA 1 µA 1 mA 1 µA 0.85 mA 1 µA Generic Voltage Supply Tx ADM3307E 2.7 V to 3.6 V ADM3310E ADM3311E ADM3312E ADM3315E 15 kV ESD ICC Max ICC Shutdown Max* 1 µA Additional Features ± 15 kV ESD Protection CMOS on RS-232 and CMOS I/Os Including SD and EN Pins. 2 Rxs Active in Shutdown. Green Idle Mode Level 6 V. Low power ADM3311E. 22 kΩ Rx I/P Resistance. Green Idle Mode Level 6 V. Low power ADM3312E. *ICC Shutdown is 20 nA typically. ORDERING GUIDE Model Temperature Range Package Description Package Option ADM3307EARU ADM3307EACP ADM3310EARU ADM3310EACP ADM3311EARS ADM3311EARU ADM3311EACP ADM3312EARU ADM3312EACP ADM3315EARU ADM3315EACP –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C 28-Lead Thin Shrink Small Outline (TSSOP) 32-Lead 5 mm × 5 mm Lead Frame Chip Scale Package (LFCSP) 28-Lead Thin Shrink Small Outline (TSSOP) 32-Lead 5 mm × 5 mm Lead Frame Chip Scale Package (LFCSP) 28-Lead Shrink Small Outline (SSOP) 28-Lead Thin Shrink Small Outline (TSSOP) 32-Lead 5 mm × 5 mm Lead Frame Chip Scale Package (LFCSP) 24-Lead Thin Shrink Small Outline (TSSOP) 32-Lead 5 mm × 5 mm Lead Frame Chip Scale Package (LFCSP) 24-Lead Thin Shrink Small Outline (TSSOP) 32-Lead 5 mm × 5 mm Lead Frame Chip Scale Package (LFCSP) RU-28 CP-32 RU-28 CP-32 RS-28 RU-28 CP-32 RU-24 CP-32 RU-24 CP-32 CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADM33xxE features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. REV. F –5– WARNING! ESD SENSITIVE DEVICE ADM33xxE PIN CONFIGURATIONS 26 C1+ 25 C3– PIN 1 IDENTIFIER 1 2 3 4 5 V– GND GND T1OUT 20 T2OUT 19 T3OUT 18 T4OUT 17 T5OUT 27 C3 C2 3 26 C1 C1 4 25 C3 EN 5 SD 6 T1IN 7 22 T1OUT T2IN 8 21 T2OUT T3IN 9 ADM3307E 24 V 23 GND 20 T3OUT 19 T4OUT T5IN 11 18 T5OUT 14 15 16 TOP VIEW (Not to Scale) T4IN 10 13 12 NC R1OUT R2OUT R3OUT 9 7 8 2 NC R3IN R2IN R1IN TOP VIEW (Not to Scale) 28 C2 VCC 24 23 22 21 ADM3307E 6 10 11 EN SD NC T1IN T2IN T3IN T4IN T5IN 27 C3+ 32 C1– 31 C2– 30 VCC 29 V+ 28 C2+ V 1 R1OUT 12 17 R1IN R2OUT 13 16 R2IN R3OUT 14 15 R3IN 26 C3– 25 V– 20 TOP VIEW (Not to Scale) 19 18 C1– SD NC T1OUT T2OUT T3OUT R1IN R2IN 15 16 14 17 13 7 8 ADM3310E/ ADM3311E 12 6 24 23 22 21 NC NC R5IN R4IN R3IN 1 2 3 4 5 PIN 1 IDENTIFIER R3OUT 9 R4OUT 10 R5OUT 11 EN C1+ NC T1IN T2IN T3IN R1OUT R2OUT 27 GND 32 C2– 31 VCC 30 C2+ 29 V+ 28 C3+ ADM3307E V 1 28 C3 C2 2 27 GND VCC 3 26 C3 C2 4 25 V EN 5 C1 6 T1IN 7 T2IN 8 T3IN 9 ADM3310E/ ADM3311E 24 C1 23 SD 22 T1OUT 21 T2OUT TOP VIEW (Not to Scale) 20 T3OUT R1OUT 10 19 R1IN R2OUT 11 18 R2IN R3OUT 12 17 R3IN R4OUT 13 16 R4IN R5OUT 14 15 R5IN 26 C3– 25 V– 20 TOP VIEW (Not to Scale) 19 18 17 C1– SD NC T1OUT T2OUT T3OUT NC NC V 1 24 C3 C2 2 23 GND VCC 3 22 C3 C2 4 21 V EN 5 C1 6 T1IN 7 T2IN 8 15 16 14 T3IN 13 NC 7 NC 8 24 23 22 21 ADM3312E/ ADM3315E 12 6 PIN 1 IDENTIFIER NC NC R3IN R2IN R1IN 1 2 3 4 5 R1OUT 9 R2OUT 10 R3OUT 11 EN C1+ NC T1IN T2IN T3IN 27 GND 32 C2– 31 VCC 30 C2+ 29 V+ 28 C3+ ADM3310E/ADM3311E 9 ADM3312E/ ADM3315E 20 C1 19 SD 18 T1OUT 17 T2OUT TOP VIEW (Not to Scale) 16 T3OUT R1OUT 10 15 R1IN R2OUT 11 14 R2IN R3OUT 12 13 R3IN ADM3312E/ADM3315E –6– REV. F ADM33xxE PIN FUNCTION DESCRIPTION Mnemonic Function VCC V+ Power Supply Input 2.7 V to 3.6 V Internally generated positive supply 7.25 V (6.5 V nominal for ADM3310E, ADM3315E). Capacitor C4 is connected between VCC and V+. Internally generated positive supply –7.25 V (–6.5 V nominal for ADM3310E, ADM3315E). Capacitor C5 is connected between GND and V–. Ground Pin. Must be connected to 0 V. External Capacitor 1 is connected between these pins. A 0.1 µF capacitor is recommended but larger capacitors up to 1 µF may be used. External Capacitor 2 is connected between these pins. A 0.1 µF capacitor is recommended but larger capacitors up to 1 µF may be used. External Capacitor 3 is connected between these pins. A 0.1 µF capacitor is recommended but larger capacitors up to 1 µF may be used. Transmitter (Driver) Inputs. These inputs accept TTL/CMOS levels. An internal 400 kΩ pull-up resistor to VCC is connected on each input. Transmitter (Driver) Outputs. Typically ± 5.5 V (± 6.4 V for ADM3311E and ADM3312E) Receiver Inputs. These inputs accept RS-232 signal levels. An internal 5 kΩ pull-down resistor (22 kΩ for ADM3315E) to GND is connected on each of these inputs. Receiver Outputs. These are TTL/CMOS levels. Receiver Enable. A high level three-states all the receiver outputs. Shutdown Control. A high level will disable the charge pump and reduce the quiescent current to less than 1 µA. All transmitters and most receivers are disabled. One receiver remains active in shutdown (two receivers active in shutdown for the ADM3310E). • ADM3307E ROUT3 active in shutdown • ADM3310E ROUT4 and ROUT5 active in shutdown • ADM3311E ROUT5 active in shutdown • ADM3312E ROUT3 active in shutdown • ADM3315E ROUT3 active in shutdown V– GND C1+, C1– C2+, C2– C3+, C3– TIN TOUT RIN ROUT EN SD Table I. ADM3307E Truth Table Table II. ADM3310E Truth Table SD EN Status TOUT1–5 ROUT1–2 ROUT3 SD EN Status TOUT1–3 ROUT1–3 ROUT4–5 0 0 Enabled Enabled Enabled 0 0 Enabled Enabled 1 Enabled Disabled Disabled 0 1 Enabled Disabled Disabled 1 1 0 1 Disabled Disabled Disabled Disabled Enabled Disabled 1 1 0 1 Normal Operation Receivers Disabled Shutdown Shutdown Enabled 0 Normal Operation Normal Operation Shutdown Shutdown Disabled Disabled Disabled Disabled Enabled Disabled Table IV. ADM3312E/ADM3315E Truth Table Table III. ADM3311 Truth Table SD EN Status TOUT1–3 ROUT1–4 ROUT5 SD EN Status TOUT1–3 ROUT1–2 ROUT3 0 0 Enabled Enabled Enabled 0 0 Enabled Enabled 1 Enabled Disabled Disabled 0 1 Enabled Disabled Disabled 1 1 0 1 Disabled Disabled Disabled Disabled Enabled Disabled 1 1 0 1 Normal Operation Normal Operation Shutdown Shutdown Enabled 0 Normal Operation Receivers Disabled Shutdown Shutdown Disabled Disabled Disabled Disabled Enabled Disabled REV. F –7– ADM33xxE–Typical Performance Characteristics 9 TOUTHIGH 7 5 Tx O/P – V SD V 3 1 –1 –3 –5 TOUTLOW –7 0 TPC 1. Charge Pump V+ Exiting Shutdown 200 400 600 LOAD CAPACITANCE – pF 800 1000 TPC 4. Transmitter Output vs. Load Capacitance (VCC = 3.3 V, Data Rate = 460 kbps) 40 35 SLEW RATE – V/s 30 SD 25 20 15 10 V 5 0 0 TPC 2. Charge Pump V– Exiting Shutdown 9 150 470 1000 1500 LOAD CAPACITANCE – pF 2000 2500 TPC 5. Slew Rate vs. Load Capacitance (VCC = 3.3 V) 25 V+ 7 20 5 1 ICC – mA V+/V– – V 3 –1 15 10 –3 –5 5 V– –7 –9 0 5 10 15 0 20 0 LOAD CURRENT – mA 200 400 600 800 1000 1200 LOAD CAPACITANCE – pF TPC 3. Charge Pump V+, V– vs. Load Current (VCC = 3.3 V) TPC 6. Supply Current vs. Load Capacitance (RL = 3 kΩ) (VCC = 3.3 V, Data Rate = 460 kbps) –8– REV. F ADM33xxE 25 ICC – mA 20 15 SD 10 5 TX O/P LOW 0 0 200 400 600 800 1000 1200 LOAD CAPACITANCE – pF TCP 7. Supply Current vs. Load Capacitance (RL = Infinite) (VCC = 3.3 V, Data Rate = 460 kbps) TPC 10. Transmitter Output (Low) Exiting Shutdown 30 10 28 460kbps 8 6 24 TxOUT VOLTAGE – V SUPPLY CURRENT – mA 26 250kbps 22 20 125kbps 18 16 4 2 0 –2 –4 14 –6 12 –8 10 0 200 400 600 LOAD CAPACITANCE – pF 800 –10 1000 0 200 400 600 800 1000 LOAD CAPACITANCE – pF TPC 8. Supply Current vs. Load Capacitance (VCC = 3.3 V, R L = 5 kΩ ) TPC 11. Transmitter Output Voltage High/Low vs. Load Capacitance (VCC = 3.3 V, CLK = 1 Mb/s, RL = 5 kΩ, ADM3307E) OSCILLATOR FREQUENCY – kHz 300 SD TX O/P HIGH 250 200 150 100 50 0 TPC 9. Transmitter Output (High) Exiting Shutdown REV. F 0 5 10 LOAD CURRENT – mA 15 20 TPC 12. Oscillator Frequency vs. Load Current –9– ADM33xxE 600 25 500 20 ICC – mA ICC – A 400 300 15 10 200 5 100 0 2.6 2.8 3.0 3.2 VCC – V 3.4 0 2.6 3.6 2.8 3.0 3.2 3.4 3.6 VCC – V TPC 14. ICC vs. VCC (RL = 3 kΩ) TCP 13. ICC vs. VCC (Unloaded) –10– REV. F ADM33xxE During the oscillator high phase, S10 and S11 are open, while S8 and S9 are closed. C3 is charged to 3 VCC from the output of the voltage tripler over several cycles. During the oscillator low phase, S8 and S9 are open, while S10 and S11 are closed. C3 is connected across C5, whose positive terminal is grounded and whose negative terminal is the V– output. Over several cycles, C5 charges to –3 VCC. CIRCUIT DESCRIPTION The internal circuitry consists mainly of four sections. These include the following: 1. A charge pump voltage converter 2. 3.3 V logic to EIA-232 transmitters 3. EIA-232 to 3.3 V logic receivers 4. Transient protection circuit on all I/O lines Charge Pump DC-to-DC Voltage Converter The charge pump voltage converter consists of a 250 kHz (300 kHz for ADM3307E) oscillator and a switching matrix. The converter generates a ± 9 V supply from the input 3.0 V level. This is done in two stages using a switched capacitor technique, as illustrated. First, the 3.0 V input supply is tripled to 9.0 V using capacitor C4 as the charge storage element. The +9.0 V level is then inverted to generate –9.0 V using C5 as the storage element. However, it should be noted that, unlike other charge pump dc-todc converters, the charge pump on the ADM3307E does not run open-loop. The output voltage is regulated to ±7.25 V (or ±6.5 V for the ADM3310E and ADM3315E) by the Green Idle circuit and will never reach ±9 V in practice. This saves power as well as maintains a more constant output voltage. S1 VCC S2 S3 C1 V+ = 3VCC S6 + S5 C2 S4 + S7 GND C4 + VCC VCC INTERNAL OSCILLATOR Figure 1. Charge Pump Voltage Tripler The tripler operates in two phases. During the oscillator low phase, S1 and S2 are closed and C1 charges rapidly to VCC. S3, S4, and S5 are open, and S6 and S7 are closed. During the oscillator high phase, S1 and S2 are open, and S3 and S4 are closed, so the voltage at the output of S3 is 2 VCC. This voltage is used to charge C2. In the absence of any discharge current, C2 will charge up to 2 VCC after several cycles. During the oscillator high phase, as previously mentioned, S6 and S7 are closed, so the voltage at the output of S6 will be 3 VCC. This voltage is then used to charge C3. The voltage inverter is illustrated in Figure 2. FROM VOLTAGE TRIPLER V+ S8 The V+ and V– supplies may also be used to power external circuitry if the current requirements are small. Please refer to TPC 3 in the Typical Performance Characteristics section. What Is Green Idle? Green Idle is a method of minimizing power consumption under idle (no transmit) conditions while still maintaining the ability to transmit data instantly. How Does it Work? Charge pump type dc-to-dc converters used in RS-232 line drivers normally operate open-loop, i.e., the output voltage is not regulated in any way. Under light load conditions, the output voltage is close to twice the supply voltage for a doubler and three times the supply voltage for a tripler, with very little ripple. As the load current increases, the output voltage falls and the ripple voltage increases. Even under no-load conditions, the oscillator and charge pump operate at a very high frequency with consequent switching losses and current drain. Green Idle works by monitoring the output voltage and maintaining it at a constant value of around 7 V*. When the voltage rises above 7.25 V** the oscillator is turned off. When the voltage falls below 7 V*, the oscillator is turned on and a burst of charging pulses is sent to the reservoir capacitor. When the oscillator is turned off, the power consumption of the charge pump is virtually zero, so the average current drain under light load conditions is greatly reduced. A block diagram of the Green Idle circuit is shown in Figure 3. Both V+ and V– are monitored and compared to a reference voltage derived from an on-chip band gap device. If either V+ or V– fall below 7 V*, the oscillator will start up until the voltage rises above 7.25 V**. S10 GND S9 C3 + S11 C5 GND + V– = – (V+) INTERNAL OSCILLATOR Figure 2. Charge Pump Voltage Inverter NOTES *For ADM3310E and ADM3315E, replace with 6.25 V. **For ADM3310E and ADM3315E, replace with 6.5 V. REV. F –11– ADM33xxE Idle maintains the transmitter supply voltages under transmitter idle conditions so this delay does not occur. BAND GAP VOLTAGE REFERENCE V+ VOLTAGE COMPARATOR WITH 250mV HYSTERESIS Doesn’t It Increase Supply Voltage Ripple? The ripple on the output voltage of a charge pump operating in open-loop depends on three factors: the oscillator frequency, the value of the reservoir capacitor, and the load current. The value of the reservoir capacitor is fixed. Increasing the oscillator frequency will decrease the ripple voltage; decreasing the oscillator frequency will increase it. Increasing the load current will increase the ripple voltage; decreasing the load current will decrease it. The ripple voltage at light loads will naturally be lower than that for high load currents. START/STOP V+ SHUTDOWN CHARGE PUMP TRANSCEIVERS V– START/STOP V– VOLTAGE COMPARATOR WITH 250mV HYSTERESIS Using Green Idle, the ripple voltage is determined by the high and low thresholds of the Green Idle circuit. These are nominally 7 V* and 7.25 V**, so the ripple will be 250 mV under most load conditions. With very light load conditions, there may be some overshoot above 7.25 V**, so the ripple will be slightly greater. Under heavy load conditions where the output never reaches 7.25 V**, the Green Idle circuit will be inoperative and the ripple voltage will be determined by the load current, the same as in a normal charge pump. Figure 3. Block Diagram of Green Idle Circuit The operation of Green Idle for V+ under various load conditions is illustrated in Figure 4. Under light load conditions, C1 is maintained in a charged condition and only a single oscillator pulse will be required to charge up C2. Under these conditions, V+ may actually overshoot 7.25 V** slightly. What About Electromagnetic Compatibility? Green Idle does not operate with a constant oscillator frequency. As a result, the frequency and spectrum of the oscillator signal will vary with load. Any radiated and conducted emissions will also vary accordingly. Like other Analog Devices RS-232 transceiver products, the ADM33xxE devices feature slew rate limiting and other techniques to minimize radiated and conducted emissions. OVERSHOOT 7.25V1 V+ 7V2 OSC LIGHT LOAD Transmitter (Driver) Section 7.25V1 V+ The drivers convert 3.3 V logic input levels into EIA-232 output levels. With VCC = 3.0 V and driving an EIA-232 load, the output voltage swing is typically ± 6.4 V (or ± 5.5 V for ADM3310E and ADM3315E). 7V2 OSC MEDIUM LOAD Unused inputs may be left unconnected, as an internal 400 kV pull-up resistor pulls them high forcing the outputs into a low state. The input pull-up resistors typically source 8 mA when grounded, so unused inputs should either be connected to VCC or left unconnected in order to minimize power consumption. 7.25V1 V+ 7V2 OSC HEAVY LOAD Receiver Section The receivers are inverting level shifters that accept RS-232 input levels and translate them into 3.3 V logic output levels. The inputs have internal 5 kΩ pull-down resistors (22 kΩ for the ADM3310E) to ground and are also protected against overvoltages of up to ±30 V. Unconnected inputs are pulled to 0 V by the internal 5 kΩ (or 22 kΩ for the ADM3315E) pull-down resistor. This, therefore, results in a Logic 1 output level for unconnected inputs or for inputs connected to GND. NOTES 1. FOR ADM3310E AND ADM3315E REPLACE WITH 6.5 V. 2. FOR ADM3310E AND ADM3315E REPLACE WITH 6.25 V. Figure 4. Operation of Green Idle Under Various Load Conditions Under medium load conditions, it may take several cycles for C2 to charge up to 7.25 V**. The average frequency of the oscillator will be higher because there are more pulses in each burst and the bursts of pulses are closer together and more frequent. Under high load conditions, the oscillator will be on continuously if the charge pump output cannot reach 7.25 V**. Green Idle Versus Shutdown Shutdown Mode minimizes power consumption by shutting down the charge pump altogether. In this mode, the switches in the voltage tripler are configured so that V+ is connected directly to VCC. V– is zero because there is no charge pump operation to charge C5. This means that there is a delay when coming out of Shutdown Mode before V+ and V– achieve their normal operating voltages. Green NOTES *For ADM3310E and ADM3315E, replace with 6.25 V. **For ADM3310E and ADM3315E, replace with 6.5 V. The receivers have Schmitt trigger inputs with a hysteresis level of 0.14 V. This ensures error-free reception for both noisy inputs and for inputs with slow transition times. ENABLE AND SHUTDOWN The enable function is intended to facilitate databus connections where it is desirable to three-state the receiver outputs. In the disabled mode, all receiver outputs are placed in a high impedance state. The shutdown function is intended to shut the device down, thereby minimizing the quiescent current. In shutdown, all transmitters are disabled. All receivers are shut down, except for receiver R3 (ADM3307E, ADM3312E, and ADM3315E), receiver R5 (ADM3311E), and receivers R4 and R5 (ADM3310E). –12– REV. F ADM33xxE Note that disabled transmitters are not three-stated in shutdown, so it is not permitted to connect multiple (RS-232) driver outputs together. The shutdown feature is very useful in battery-operated systems since it reduces the power consumption to 66 nW. During shutdown, the charge pump is also disabled. When exiting shutdown, the charge pump is restarted and it takes approximately 100 µs for it to reach its steady state operating conditions. 3V EN INPUT contains two back-to-back high speed clamping diodes. During normal operation with maximum RS-232 signal levels, the diodes have no affect as one or the other is reverse biased depending on the polarity of the signal. If however the voltage exceeds about ± 50 V, reverse breakdown occurs and the voltage is clamped at this level. The diodes are large p-n junctions that are designed to handle the instantaneous current surge that can exceed several amperes. The transmitter outputs and receiver inputs have a similar protection structure. The receiver inputs can also dissipate some of the energy through the internal 5 kΩ (or 22 kΩ for the ADM3310E) resistor to GND as well as through the protection diodes. 0V VOH tDR VOH – 0.1V RECEIVER INPUT RECEIVER OUTPUT Rx D1 RIN VOL + 0.1V VOL D2 Figure 5. Receiver Disable Timing 3V Figure 7a. Receiver Input Protection Scheme EN INPUT 0V VOH RECEIVER OUTPUT VOL tER TRANSMITTER OUTPUT Tx 3V D1 0.4V D2 Figure 6. Receiver Enable Timing High Baud Rate The ADM33xxE features high slew rates permitting data transmission at rates well in excess of the EIA/RS-232E specifications. RS-232 voltage levels are maintained at data rates up to 230 kbps (460 kbps for ADM3307E) under worst-case loading conditions. This allows for high speed data links between two terminals. LAYOUT AND SUPPLY DECOUPLING Because of the high frequencies at which the ADM33xxE oscillator operates, particular care should be taken with printed circuit board layout, with all traces being as short as possible and C1 to C3 being connected as close to the device as possible. The use of a ground plane under and around the device is also highly recommended. When the oscillator starts up during Green Idle operation, large current pulses are taken from VCC. For this reason, VCC should be decoupled with a parallel combination of 10 µF tantalum and 0.1 µF ceramic capacitors, mounted as close to the VCC Pin as possible. Figure 7b. Transmitter Output Protection Scheme The ADM3307E protection scheme is slightly different (see Figures 8a and 8b). The receiver inputs, transmitter inputs, and transmitter outputs contain two back-to-back high speed clamping diodes. The receiver outputs (CMOS outputs), SD and EN Pins contain a single reverse biased high speed clamping diode. Under normal operation with maximum CMOS signal levels, the receiver output, SD, and EN protection diodes have no effect because they are reversed biased. If, however, the voltage exceeds about 15 V, reverse breakdown occurs and the voltage is clamped at this level. If the voltage reaches –0.7 V, the diode is forward biased and the voltage is clamped at this level. The receiver inputs can also dissipate some of the energy through the internal 5 kΩ resistor to GND as well as through the protection diodes. RECEIVER INPUT D1 Capacitors C1 to C3 can have values between 0.1 µF and 1 µF. Larger values will give lower ripple. These capacitors can be either electrolytic capacitors chosen for low equivalent series resistance (ESR) or nonpolarized types, but the use of ceramic types is highly recommended. If polarized electrolytic capacitors are used, then polarity must be observed (as shown by C1+). REV. F D3 RIN D2 Figure 8a. ADM3307E Receiver Input Protection Scheme TRANSMITTER OUTPUT ESD/EFT TRANSIENT PROTECTION SCHEME The ADM33xxE uses protective clamping structures on all inputs and outputs that clamp the voltage to a safe level and dissipate the energy present in ESD (electrostatic) and EFT (electrical fast transients) discharges. A simplified schematic of the protection structure is shown below in Figures 7a and 7b (see Figures 8a and 8b for ADM3307E protection structure). Each input and output RECEIVER OUTPUT Rx TRANSMITTER INPUT Tx D3 D1 D4 D2 Figure 8b. ADM3307E Transmitter Output Protection Scheme –13– ADM33xxE The protection structures achieve ESD protection up to ±15 kV on all RS-232 I/O lines (and all CMOS lines, including SD and EN for the ADM3307E). The methods used to test the protection scheme are discussed later. 100 IPEAK – % 90 ESD TESTING (IEC 1000-4-2) IEC 1000-4-2 (previously 801-2) specifies compliance testing using two coupling methods, contact discharge and air-gap discharge. Contact discharge calls for a direct connection to the unit being tested. Air-gap discharge uses a higher test voltage but does not make direct contact with the unit under testing. With air discharge, the discharge gun is moved toward the unit under testing, which develops an arc across the air gap, hence the term air discharge. This method is influenced by humidity, temperature, barometric pressure, distance, and rate of closure of the discharge gun. The contact discharge method, while less realistic, is more repeatable and is gaining acceptance in preference to the air-gap method. 36.8 10 (a) The IEC test is much more stringent in terms of discharge energy. The peak current injected is over four times greater. (b) The current rise time is significantly faster in the IEC test. (c) The IEC test is carried out while power is applied to the device. It is possible that the ESD discharge could induce latch-up in the device under test. This test, therefore, is more representative of a real world I/O discharge where the equipment is operating normally with power applied. For maximum peace of mind however, both tests should be performed, ensuring maximum protection both during handling and later during field service. HIGH VOLTAGE GENERATOR R2 R1 DEVICE UNDER TEST C1 ESD TEST METHOD R2 C1 HUMAN BODY MODEL ESD ASSOC. STD 55.1 1.5kV 100pF IEC1000-4-2 330V 150pF TIME t Figure 10. Human Body Model ESD Current Waveform 100 90 IPEAK – % Although very little energy is contained within an ESD pulse, the extremely fast rise time coupled with high voltages can cause failures in unprotected semiconductors. Catastrophic destruction can occur immediately as a result of arcing or heating. Even if catastrophic failure does not occur immediately, the device may suffer from parametric degradation that may result in degraded performance. The cumulative effects of continuous exposure can eventually lead to complete failure. I/O lines are particularly vulnerable to ESD damage. Simply touching or plugging in an I/O cable can result in a static discharge that can damage or completely destroy the interface product connected to the I/O port. Traditional ESD test methods, such as the MIL-STD-883B method 3015.7, do not fully test a product’s susceptibility to this type of discharge. This test was intended to test a product’s susceptibility to ESD damage during handling. Each pin is tested with respect to all other pins. There are some important differences between the traditional test and the IEC test: tDL tRL 10 0.1 TO 1ns TIME t 30ns 60ns Figure 11. IEC1000-4-2 ESD Current Waveform The ADM33xxE devices are tested using both of the above mentioned test methods. All pins are tested with respect to all other pins as per the Human Body Model, ESD Assoc. Std. 55.1 specification. In addition, all I/O pins are tested as per the IEC 1000-4-2 test specification. The products were tested under the following conditions: (a) Power-On—Normal Operation (b) Power-Off There are four levels of compliance defined by IEC 1000-4-2. The ADM33xxE parts meet the most stringent compliance level for both contact and air-gap discharge. This means that the products are able to withstand contact discharges in excess of 8 kV and air-gap discharges in excess of 15 kV. Table V. IEC 1000-4-2 Compliance Levels Level Contact Discharge (kV) Air Discharge (kV) 1 2 3 4 2 4 6 8 2 4 8 15 Figure 9. ESD Test Standards –14– REV. F ADM33xxE OUTLINE DIMENSIONS 32-Lead Frame Chip Scale Package [LFCSP] (CP-32) Dimensions shown in millimeters 5.00 BSC SQ 0.60 MAX PIN 1 INDICATOR 0.60 MAX 25 24 PIN 1 INDICATOR 0.50 BSC 4.75 BSC SQ TOP VIEW 32 1 0.50 0.40 0.30 17 16 9 8 3.50 REF 0.70 MAX 0.65 NOM 12 MAX 2.25 1.70 SQ 0.75 BOTTOM VIEW 0.05 MAX 0.02 NOM 1.00 0.90 0.80 0.30 0.23 0.18 SEATING PLANE 0.25 REF COPLANARITY 0.08 COMPLIANT TO JEDEC STANDARDS MO-220-VHHD-2 28-Lead Shrink Small Outline Package [SSOP] (RS-28) Dimensions shown in millimeters 10.50 10.20 9.90 28 15 5.60 5.30 5.00 PIN 1 8.20 7.80 7.40 14 1 1.85 1.75 1.65 2.00 MAX 0.10 COPLANARITY 0.25 0.09 0.65 BSC 0.05 MIN 0.38 0.22 8 4 0 SEATING PLANE 0.95 0.75 0.55 COMPLIANT TO JEDEC STANDARDS MO-150AH 24-Lead Thin Shrink Small Outline Package [TSSOP] (RU-24) 28-Lead Thin Shrink Small Outline Package [TSSOP] (RU-28) Dimensions shown in millimeters Dimensions shown in millimeters 7.90 7.80 7.70 9.80 9.70 9.60 24 13 28 15 4.50 4.40 4.30 4.50 4.40 4.30 6.40 BSC 1 12 1 PIN 1 PIN 1 0.65 BSC 0.15 0.05 0.30 COPLANARITY 0.19 0.10 0.65 BSC 1.20 MAX SEATING PLANE 0.15 0.05 0.20 0.09 8 0 0.75 0.60 0.45 0.30 COPLANARITY 0.19 0.10 1.20 MAX SEATING PLANE 0.20 0.09 8 0 COMPLIANT TO JEDEC STANDARDS MO-153AE COMPLIANT TO JEDEC STANDARDS MO-153AD REV. F 6.40 BSC 14 –15– 0.75 0.60 0.45 ADM33xxE Revision History Location Page PRINTED IN U.S.A. ADM3307E (REV. 0), ADM3311E (REV. E), and ADM3312E (REV. A) data sheets merged into Rev. F of ADM33xxE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UNIVERSAL ADM3310E (REV. PrA now prelims) and ADM3315E (REV. PrA) added . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UNIVERSAL Edits to FEATURES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Edits to APPLICATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Edits to GENERAL DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Edits to FUNCTIONAL BLOCK DIAGRAMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Edits to SPECIFICATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Edits to ABSOLUTE MAXIMUM RATINGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 ADM33xx PRODUCT SELECTION GUIDE added . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Added ADM3307E, ADM3310E, ADM3312E, and ADM3315E PIN CONFIGURATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Edits to PIN FUNCTION DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Added ADM3307E, ADM3310E, ADM3312E, and ADM3315E Truth Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Edits to TPCs 1–14 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 TPCs 15–18 deleted . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Edits to CIRCUIT DESCRIPTION section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Edits to Charge Pump DC-to-DC Voltage Converter section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Edits to How Does It Work section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Edits to Green Idle vs. Shutdown section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Edits to Doesn’t It Increase Supply Voltage Ripple? section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Edits to What About Electromagnetic Compatibility? section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Edits to Transmitter (Driver) section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Edits to Receiver section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Edits to ENABLE AND SHUTDOWN section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Edits to High Baud Rate section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Edits to ESD/EFT TRANSIENT PROTECTION SCHEME . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Added Figures 8a and 8b and renumbered the figures that followed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Edits to ESD TESTING (IEC 1000-4-2) section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Edits to Figure 9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Deleted Table II and Table III and replaced them with Table V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Added RU-24 PACKAGE OUTLINE; updated CP-32, RS-28 and RU-28 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 C02915–0–8/02(F) 8/02—Data Sheet changed to REV. F –16– REV. F