ETC AH312

AH312
The Communications Edge TM
2 Watt, High Linearity InGaP HBT Amplifier
Product Features
Product Description
• 400 – 2300 MHz
Functional Diagram
The AH312 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT
is able to achieve high performance for various
narrowband-tuned application circuits with up to +49
dBm OIP3 and +33 dBm of compressed 1dB power. It is
housed in an industry standard SOT-89 SMT package.
All devices are 100% RF and DC tested.
• +33 dBm P1dB
• +51 dBm Output IP3
• 18 dB Gain @ 900 MHz
• 11 dB Gain @ 1960 MHz
• Single Positive Supply (+5V)
• SOIC-8 SMT Package
Applications
• Final stage amplifiers for Repeaters
• Mobile Infrastructure
• Defense / Homeland Security
The AH312 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
AH312 to maintain high linearity over temperature and
operate directly off a single +5V supply.
This
combination makes the device an excellent candidate for
transceiver line cards in current and next generation
multi-carrier 3G base stations.
Specifications
Parameters
Product Information
1
8
2
7
3
6
4
5
Function
Vref
Input
Output
Vbias
GND
N/C or GND
Pin No.
1
3
6, 7
8
Backside Paddle
2, 4, 5
Typical Performance
Units
Min
Typ
Max
Parameters
MHz
dB
dB
dB
dBm
dBm
400
9
2140
10
-20
-6.8
+33.2
+48
2300
Frequency Range
S21 - Gain
S11 - Input R.L.
S22 - Output R.L.
Output P1dB
Output IP3 (2)
IS-95A Channel Power
@ -45 dBc ACPR, 1960 MHz
W-CDMA Channel Power
@ -45 dBc ACLR, 2140 MHz
Noise Figure
Operating Current Range (3)
Device Voltage
dBm
+27.5
dBm
+25.3
W-CDMA Channel Power
dB
mA
V
+32
+47
700
7.7
800
+5
@ -45 dBc ACPR,
@ -45 dBc ACLR
900
Test conditions unless otherwise noted.
1. T = 25ºC, Vsupply = +5 V, Frequency = 2140 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +17 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions. It is
expected that the current can increase up to 1 A at P1dB.
Absolute Maximum Rating
Parameters
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Units
Frequency
S21 – Gain
S11 – Input R.L.
S22 – Output R.L.
Output P1dB
Output IP3
IS-95A Channel Power
Rating
-40 to +85 °C
-65 to +150 °C
+28 dBm
+8 V
1400 mA
8W
Noise Figure
Supply Bias
Typical
MHz
dB
dB
dB
dBm
dBm
900
18
-18
-11
+33
+49
1960
11
-19
-6.8
+33.4
+51
dBm
+27
+27.5
dBm
dB
2140
10
-20
-6.8
+33.2
+48
+25.3
8.0
7.3
7.7
+5 V @ 800 mA
Typical parameters reflect performance in a tuned application circuit:
Supply Voltage = +5 V, Idq = 800 mA, +25° C.
Ordering Information
Part No.
Description
AH312-S8
AH312-S8PCB900
AH312-S8PCB1960
AH312-S8PCB2140
2 Watt, High Linearity InGaP HBT Amplifier
900 MHz Evaluation Board
1960 MHz Evaluation Board
2140 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
January 2004
AH312
The Communications Edge TM
2 Watt, High Linearity InGaP HBT Amplifier
Product Information
Typical Device Data
S-Parameters (VDS = +5 V, IDS = 800 mA, T = 25°C, unmatched 50 ohm system)
S11
4
0.
30
2.
0
0
3.
0
4.
5.0
4.0
5.0
0.2
0.2
10.0
4.0
5.0
3.0
2.0
1.0
0.8
0.6
0.4
0.2
10.0
0
10.0
4.0
5.0
3.0
2.0
1.0
0.8
0.6
0.2
0
0.4
10.0
15
10
5
-10.0
-3
.0
.0
-2
-0.8
Sw p Min
0.05GHz
Swp Min
0.05G Hz
-1.0
-0
.6
.0
-2
2.5
-1.0
2
-0.8
1
1.5
Frequency (GHz)
-0.
6
0.5
.4
-0
-
-4.
0
-5.
0
0
3.
0
.4
-0
-10
2
-0.
-4
.0
-5.
0
2
-0.
0
-5
-10.0
Gain (dB)
0.8
0
3.
25
20
Swp Max
3GHz
0.6
2.
0
DB(GMax)
1.0
1.0
0.8
6
0.
DB(|S[2,1]|)
35
S22
Sw p Max
3GH z
0.
4
Gain / Maximum Stable Gain
40
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line.
The return loss plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increments.
S-Parameters (VDS = +5 V, IDS = 800 mA, T = 25°C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz)
50
100
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
-0.86
-0.64
-0.68
-0.76
-0.93
-1.15
-1.50
-2.39
-4.47
-11.96
-8.66
-2.76
-1.21
-0.68
-0.43
-0.32
-0.29
-178.06
178.18
172.85
164.33
155.56
146.04
134.58
121.66
104.01
86.06
-179.11
159.91
142.90
130.93
121.91
114.61
108.16
27.55
22.16
16.13
10.61
7.46
5.78
4.87
4.74
5.33
5.96
4.41
0.53
-3.21
-7.27
-10.41
-13.28
-15.94
113.72
98.81
89.06
77.31
67.94
57.62
46.90
32.96
14.01
-17.55
-56.78
-89.86
-107.99
-123.14
-134.93
-143.22
-149.93
-45.75
-45.46
-42.65
-43.96
-41.17
-41.65
-40.36
-40.22
-38.97
-38.96
-39.35
-43.55
-41.56
-42.46
-39.71
-40.99
-39.65
30.91
12.80
6.09
4.69
6.70
-5.78
-7.84
-16.51
-48.82
-86.32
-144.53
145.94
104.25
73.64
64.28
58.20
48.40
-0.38
-0.38
-0.48
-0.48
-0.61
-0.66
-0.71
-0.80
-0.76
-0.60
-0.52
-0.41
-0.54
-0.68
-0.73
-0.73
-0.79
-130.98
-157.30
-172.51
177.51
173.63
170.49
169.31
168.22
167.91
170.63
167.41
164.50
160.11
157.84
154.66
151.14
147.52
Application Circuit PC Board Layout
Circuit Board Material: .014” Getek, single layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning
shunt capacitors – C8 and C9. The markers and vias are spaced in .050” increments.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
January 2004
AH312
The Communications Edge TM
2 Watt, High Linearity InGaP HBT Amplifier
Product Information
900 MHz Application Circuit (AH312-89PCB900)
Typical RF Performance at 25°°C
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
900 MHz
18 dB
-18 dB
-11 dB
+33 dBm
+49 dBm
(+17 dBm / tone, 1 MHz spacing)
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure
Device / Supply Voltage
Quiescent Current
+27 dBm
8.0 dB
+5 V
800 mA
S11 vs. Frequency
0
19
-5
+25°C
17
+25°C
-10
-15
-20
860
-40°C
880
+85°C
900
920
-30
840
940
+25°C
860
34
6
4
2
880
900
-40°C
+85°C
920
26
840
940
+25°C
45
40
-40 C
920
940
860
880
900
920
22
940
+85 C
23
24
25
26
27
28
29
24
26
Output Channel Power (dBm)
OIP3 vs. Output Power
freq. = 900 MHz, 901 MHz, +17 dBm/tone
freq. = 900 MHz, 901 MHz, +25° C
55
50
45
35
-40
+25 C
-70
40
880
900
Frequency (MHz)
940
-60
+85°C
OIP3 (dBm)
OIP3 (dBm)
50
920
-50
OIP3 vs. Temperature
55
900
ACPR vs. Channel Power
Frequency (MHz)
+25° C, +17 dBm/tone
880
+85°C
IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 900 MHz
-40
30
OIP3 vs. Frequency
860
860
-40°C
Frequency (MHz)
32
Frequency (MHz)
55
940
Circuit boards are optimized at 880 MHz
28
860
920
ACPR (dBc)
8
P1dB (dBm)
NF (dB)
36
+25°C
900
P1dB vs. Frequency
10
-40°C
880
-20
840
Frequency (MHz)
Noise Figure vs. Frequency
OIP3 (dBm)
-10
-25
Frequency (MHz)
35
840
+85°C
-15
16
0
840
-40°C
S22 (dB)
18
15
840
S22 vs. Frequency
0
-5
S11 (dB)
S21 (dB)
S21 vs. Frequency
20
50
45
40
35
-15
10
35
Temperature (°C)
60
85
12
14
16
18
20
22
Output Power (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
January 2004
AH312
The Communications Edge TM
2 Watt, High Linearity InGaP HBT Amplifier
Product Information
1960 MHz Application Circuit (AH312-89PCB1960)
Typical RF Performance at 25°°C
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
1960 MHz
11 dB
-20 dB
-6.8 dB
+33.4 dBm
+51 dBm
(+17 dBm / tone, 1 MHz spacing)
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
+27.5 dBm
Noise Figure
Device / Supply Voltage
Quiescent Current
7.3 dB
+5 V
800 mA
S11 vs. Frequency
0
12
-5
+25°C
10
+25°C
-10
-15
-20
1940
-40°C
1950
+85°C
1960
1970
1980
-30
1930
1990
+25°C
1940 1950 1960
34
6
4
2
30
1950
1960
1970
-40°C
1980
26
1930
1990
1940
OIP3 vs. Frequency
-65
+85°C
-40 C
1950
1960
1970
1980
22
1990
40
1990
23
24
25
26
27
28
29
freq. = 1960 MHz, 1961 MHz, +25° C
55
50
45
35
-40
+85 C
OIP3 vs. Output Power
freq. = 1960 MHz, 1961 MHz, +17 dBm/tone
40
1980
+25 C
Output Channel Power (dBm)
OIP3 (dBm)
OIP3 (dBm)
45
1950 1960 1970
Frequency (MHz)
-55
OIP3 vs. Temperature
55
50
1940
-45
Frequency (MHz)
+25° C, +17 dBm/tone
1990
-75
Frequency (MHz)
55
+25°C
1970 1980
IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 1960 MHz
-35
32
+85°C
+85°C
ACPR vs. Channel Power
Circuit boards are optimized at 1960 MHz
28
1940
1940 1950 1960
-40°C
Frequency (MHz)
ACPR (dBc)
8
P1dB (dBm)
NF (dB)
36
+25°C
1990
P1dB vs. Frequency
10
-40°C
1970 1980
-20
1930
Frequency (MHz)
Noise Figure vs. Frequency
OIP3 (dBm)
-10
-25
Frequency (MHz)
35
1930
+85°C
-15
9
0
1930
-40°C
S22 (dB)
11
8
1930
S22 vs. Frequency
0
-5
S11 (dB)
S21 (dB)
S21 vs. Frequency
13
50
45
40
35
-15
10
35
Temperature (°C)
60
85
12
14
16
18
Output Power (dBm)
20
22
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
January 2004
AH312
The Communications Edge TM
2 Watt, High Linearity InGaP HBT Amplifier
Product Information
2140 MHz Application Circuit (AH312-89PCB2140)
Typical RF Performance at 25°°C
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
2140 MHz
10 dB
-20 dB
-6.8 dB
+33.2 dBm
+48 dBm
(+17 dBm / tone, 1 MHz spacing)
W-CDMA Channel Power
(@ -45 dBc ACLR)
+25.3 dBm
Noise Figure
Device / Supply Voltage
Quiescent Current
7.7 dB
+5 V
800 mA
S11 vs. Frequency
0
11
-5
+25°C
9
+25°C
-10
-15
-20
2120
-40°C
2130
2140
2150
2160
-30
2110
2170
+25°C
2120 2130 2140
34
6
4
2
2130
2140
2150
2170
-40°C
+25°C
-50
-55
+85°C
-40 C
2120
2130
2140
2150
2160
2170
22
Frequency (MHz)
+25 C
23
24
25
OIP3 vs. Temperature
OIP3 vs. Output Power
+25° C, +17 dBm/tone
freq. = 2140 MHz, 2141 MHz, +17 dBm/tone
freq. = 2140 MHz, 2141 MHz, +25° C
55
40
55
50
OIP3 (dBm)
OIP3 (dBm)
45
45
40
2130 2140 2150
Frequency (MHz)
2160
2170
35
-40
+85 C
26
27
Output Channel Power (dBm)
OIP3 vs. Frequency
50
2120
-45
-60
Frequency (MHz)
55
2170
3GPP W-CDMA, Test Model 1+64 DPCH, ±5 MHz offset, 2140 MHz
-35
30
+85°C
2160
2150 2160
-40
28
2120
2120 2130 2140
+85°C
ACPR vs. Channel Power
Circuit boards are optimized at 2140 MHz
32
26
2110
-40°C
Frequency (MHz)
ACPR (dBc)
8
P1dB (dBm)
NF (dB)
36
+25°C
2170
P1dB vs. Frequency
10
-40°C
2150 2160
-20
2110
Frequency (MHz)
Noise Figure vs. Frequency
OIP3 (dBm)
-10
-25
+85°C
Frequency (MHz)
35
2110
+85°C
-15
8
0
2110
-40°C
S22 (dB)
10
7
2110
S22 vs. Frequency
0
-5
S11 (dB)
S21 (dB)
S21 vs. Frequency
12
50
45
40
35
-15
10
35
Temperature (°C)
60
85
12
14
16
18
Output Power (dBm)
20
22
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
January 2004
AH312
The Communications Edge TM
2 Watt, High Linearity InGaP HBT Amplifier
Product Information
Outline Drawing
Product Marking
The component will be marked with an
“AH312-S8” designator with an alphanumeric
lot code on the top surface of the package.
Tape and reel specification for this part is
located on the website in the “Application
Notes” section.
ESD / MSL Information
ESD Rating:
Value:
Test:
Standard:
Land Pattern
Class 1B
Passes between 500 and 1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
MSL Rating: Level 3 at +240° C convection reflow
Standard:
JEDEC Standard J-STD-020A
Mounting Config. Notes
Parameter
Rating
Operating Case Temperature
Thermal Resistance1, Rth
Junction Temperature2, Tjc
-40 to +85° C
17.5° C / W
155° C
Notes:
1. The thermal resistance is referenced from the junctionto-case at a case temperature of 85° C. Tjc is a
function of the voltage at pins 6 and 7 and the current
applied to pins 6, 7, and 8 and can be calculated by:
Tjc = Tcase + Rth * Vd * Id
2. This corresponds to the typical biasing condition of
+5V, 800 mA at an 85° C case temperature. A
minimum MTTF of 1 million hours is achieved for
junction temperatures below 247° C.
MTTF vs. GND Tab Temperature
100000
MTTF (million hrs)
Thermal Specifications
1. Ground / thermal vias are critical for the
proper performance of this device. Vias
should use a .35mm (#80 / .0135”) diameter
drill and have a final plated thru diameter
of .25 mm (.010”).
2. Add as much copper as possible to inner and
outer layers near the part to ensure optimal
thermal performance.
3. Mounting screws can be added near the part
to fasten the board to a heatsink. Ensure that
the ground / thermal via region contacts the
heatsink.
4. Do not put solder mask on the backside of the
PC board in the region where the board
contacts the heatsink.
5. RF trace width depends upon the PC board
material and construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches).
Angles are in degrees.
10000
1000
100
60
70
80
90
100 110
Tab Temperature (°C)
120
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
January 2004