Composite Transistors XN01509 (XN1509) Silicon NPN epitaxial planer transistor Unit: mm For high-frequency amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SC4561 × 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 ■ Basic Part Number of Element 0.16 -0.06 +0.1 0.3 -0.05 0.95 +0.2 4 0.95 ● Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half. 2.9 -0.05 ● 5 1.9±0.1 ■ Features 1.5 -0.05 ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage of element Emitter to base voltage Collector current VCBO 50 V VCEO 50 V VEBO 5 V IC 50 mA Total power dissipation PT 200 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Storage temperature 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) Parameter Collector to base voltage 4 : Emitter 5 : Base (Tr1) EIAJ : SC–74A Mini Type Pakage (5–pin) Internal Connection 5 Tr1 1 4 Tr2 2 (Ta=25˚C) Symbol Conditions min typ max Unit VCBO IC = 10µA, IE = 0 50 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10µA, IC = 0 5 V Collector cutoff current *1 0.4±0.2 Marking Symbol: AN 3 ■ Electrical Characteristics 0.1 to 0.3 ICBO VCB = 10V, IE = 0 0.1 µA ICEO VCE = 10V, IB = 0 100 µA Forward current transfer ratio hFE VCE = 10V, IC = 2mA 200 Forward current transfer hFE ratio hFE (small/large)*1 VCE = 10V, IC = 2mA 0.5 500 Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA 0.06 Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 250 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 1.5 pF 0.99 0.3 V Ratio between 2 elements Note.) The Part number in the Parenthesis shows conventional part number. 1 Composite Transistors XN01509 PT — Ta IC — VCE 240 IC — VBE 60 120 VCE=10V 120 80 IB=300µA 80 250µA 60 200µA 150µA 40 100µA 40 80 120 2 VCE(sat) — IC 10 3 1 0.3 Ta=75˚C –25˚C 0.01 10 3 30 100 300 1000 Collector current IC (mA) Collector output capacitance Cob (pF) f=1MHz IE=0 Ta=25˚C 5 4 3 2 1 0 1 3 10 30 100 Collector to base voltage VCB (V) 2 8 10 0 12 0.2 0.4 0.6 0.8 1.2 fT — I E VCB=10V Ta=25˚C 500 Ta=75˚C 400 25˚C –25˚C 300 200 100 0 0.1 1.0 Base to emitter voltage VBE (V) 600 0.3 1 3 10 30 Collector current IC (mA) Cob — VCB 6 6 VCE=10V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 30 1 4 600 IC/IB=10 0.03 20 hFE — IC 100 25˚C 30 Collector to emitter voltage VCE (V) Ambient temperature Ta (˚C) 0.1 40 0 0 160 Transition frequency fT (MHz) 0 –25˚C 50µA 0 0 Ta=75˚C 10 20 40 Collector current IC (mA) 160 25˚C 50 100 200 Collector current IC (mA) Total power dissipation PT (mW) Ta=25˚C 100 500 400 300 200 100 0 0.1 0.3 1 3 10 30 Emitter current IE (mA) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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