BC 856W ... BC 860W PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 846W, BC 847W, BC 848W 2 BC 849W, BC 850W (NPN) 1 Pin Configuration VSO05561 Type Marking BC 856AW 3As 1=B 2=E 3=C SOT-323 BC 856BW 3Bs 1=B 2=E 3=C SOT-323 BC 857AW 3Es 1=B 2=E 3=C SOT-323 BC 857BW 3Fs 1=B 2=E 3=C SOT-323 BC 857CW 3Gs 1=B 2=E 3=C SOT-323 BC 858AW 3Js 1=B 2=E 3=C SOT-323 BC 858BW 3Ks 1=B 2=E 3=C SOT-323 BC 858CW 3Ls 1=B 2=E 3=C SOT-323 BC 859AW 4As 1=B 2=E 3=C SOT-323 BC 859BW 4Bs 1=B 2=E 3=C SOT-323 BC 859CW 4Cs 1=B 2=E 3=C SOT-323 BC 860BW 4Fs 1=B 2=E 3=C SOT-323 BC 860CW 4Gs 1=B 2=E 3=C SOT-323 1 Package Sep-28-1999 BC 856W ... BC 860W Maximum Ratings Parameter Symbol BC 856W BC 857W BC 858W Unit BC 860W BC 859W Collector-emitter voltage VCEO 65 45 30 V Collector-base voltage VCBO 80 50 30 Collector-emitter voltage VCES 80 50 30 V Emitter-base voltage VEBO 5 5 5 V DC collector current IC 100 mA Peak collector current I CM 200 mA Peak base current I BM 200 Peak emitter current I EM 200 Total power dissipation , TS = 124 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Junction ambient 1) RthJA ≤240 Junction - soldering point RthJS ≤105 Thermal Resistance K/W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BC856W 65 - - BC857/860W 45 - - BC858/859W 30 - - BC 856W 80 - - BC 857/860W 50 - - BC 858/859W 30 - - Collector-base breakdown voltage IC = 10 µA, IB = 0 V V(BR)CEO V(BR)CBO 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 1cm 2 Cu 2 Sep-28-1999 BC 856W ... BC 860W Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 V V(BR)CES BC 856W 80 - - BC 857/860W 50 - - BC 858/859W 30 - - V(BR)EBO 5 - - ICBO - - 15 nA ICBO - - 5 µA Emitter-base breakdown voltage IE = 1 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) IC = 10 µA, VCE = 5 V hFE -group A - 140 - hFE -group B - 250 - hFE -group C - 480 - hFE DC current gain 1) IC = 2 mA, VCE = 5 V - hFE hFE -group A 125 180 250 hFE -group B 220 290 475 hFE -group C 420 520 800 Collector-emitter saturation voltage1) mV VCEsat IC = 10 mA, IB = 0.5 mA - 75 300 IC = 100 mA, IB = 5 mA - 250 650 IC = 10 mA, IB = 0.5 mA - 700 - IC = 100 mA, IB = 5 mA - 850 - IC = 2 mA, VCE = 5 V 600 650 750 IC = 10 mA, VCE = 5 V - - 820 Base-emitter saturation voltage 1) VBEsat Base-emitter voltage 1) VBE(ON) 1) Pulse test: t ≤ 300µs, D = 2% 3 Sep-28-1999 BC 856W ... BC 860W Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. fT - 250 - MHz Ccb - 3 5 pF Ceb - 10 15 AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz h11e hFE -gr.A hFE -gr.B hFE -gr.C Open-circuit reverse voltage transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz hFE -gr.A hFE -gr.B hFE -gr.C Short-circuit forward current transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz hFE -gr.A hFE -gr.B hFE -gr.C Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz hFE -gr.A hFE -gr.B hFE -gr.C Noise figure IC = 200 µA, VCE = 5 V, RS = 2 kΩ, BC 856W f = 1 kHz, ∆ f = 200 Hz BC 857W kΩ - 2.7 4.5 8.7 10-4 h12e - 1.5 2 3 - h21e - 200 330 600 µS h22e F - 18 30 60 - 10 dB - 1 1 - 4 4 0.11 µV BC 858W Noise figure IC = 200 µA, VCE = 5 V, RS = 2 kΩ, f = 1 kHz, ∆ f = 200 Hz F BC 859W BC 860W Equivalent noise voltage IC = 200 µA, VCE = 5 V, RS = 2 kΩ, f = 10 ... 50 Hz Vn BC 860W 4 Sep-28-1999 BC 856W ... BC 860W Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO) Total power dissipation Ptot = f (TA *;TS ) * Package mounted on epoxy 300 C CB0 ( C EB0 ) mW 12 pF BC 856...860 EHP00376 10 P tot TS 200 8 C EBO TA 150 6 100 4 50 2 0 0 20 40 60 80 120 °C 100 0 10 -1 150 C CBO 5 10 0 V TA ,TS VCB0 Permissible pulse load Transition frequency fT = f (IC) Ptotmax / PtotDC = f (tp ) VCE = 5V Ptot max 5 Ptot DC tp D= T EHP00378 10 3 EHP00377 10 3 10 1 (VEB0 ) MHz tp fT 5 T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 10 2 5 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 1 10 -1 10 0 tp 5 5 10 0 5 10 1 mA ΙC 10 2 Sep-28-1999 BC 856W ... BC 860W Collector cutoff current ICBO = f (TA) Collector-emitter saturation voltage VCB = 30V IC = f (VCEsat), h FE = 20 EHP00381 10 4 nA EHP00380 10 2 mA ΙC Ι CB0 10 3 100 C 25 C -50 C 5 10 10 1 max 2 5 5 typ 10 1 5 10 10 0 5 0 5 10 -1 0 50 100 C 10 -1 150 0 0.1 0.2 0.4 0.3 TA DC current gain hFE = f (IC ) Base-emitter saturation voltage VCE = 5V IC = f (VBEsat), hFE = 20 EHP00382 10 3 V 0.5 VCEsat EHP00379 10 2 mA h FE 5 ΙC 100 C 100 C 25 C -50C 25 C 10 2 -50 C 10 1 5 5 10 1 10 0 5 5 10 0 10 -2 5 10 -1 5 10 0 5 10 1 10 -1 mA 10 2 ΙC 6 0 0.2 0.4 0.6 0.8 V 1.2 V BEsat Sep-28-1999 BC 856W ... BC 860W h parameter he = f (IC) normalized h parameter he = f (VCE) normalized VCE = 5V IC = 2mA 10 2 he BC 856...860 EHP00383 2.0 5 BC 856...860 he Ι C = 2 mA h 11 1.5 VCE = 5 V h 11e 10 1 EHP00384 5 1.0 h 12e h12 10 0 h 22 0.5 5 h 21e h 22e 0 10 -1 10 -1 5 10 0 mA 10 1 0 10 20 V ΙC VCE Noise figure F = f (VCE ) Noise figure F = f (f) IC = 0.2mA, RS = 2kΩ, f = 1kHz IC = 0.2mA, VCE = 5V, R S = 2kΩ 20 dB BC 856...860 30 EHP00385 20 BC 856...860 EHP00386 dB F F 15 15 10 10 5 5 0 10 -1 5 10 0 5 10 1 V 0 10 -2 10 2 VCE 10 -1 10 0 10 1 kHz 10 2 f 7 Sep-28-1999 BC 856W ... BC 860W Noise figure F = f (IC ) Noise figure F = f (IC) VCE = 5V, f = 120Hz VCE = 5V, f = 1kHz 20 BC 856...860 EHP00387 20 BC 856...860 EHP00388 dB dB F F 15 15 R S = 1 MΩ 100 kΩ 10 k Ω R S = 1 MΩ 100 k Ω 10 kΩ 10 10 500 Ω 1 kΩ 5 5 1 kΩ 0 10 -3 10 -2 10 -1 10 0 500 Ω 0 10 -3 mA 10 1 ΙC 10 -2 10 -1 10 0 mA 10 1 ΙC Noise figure F = f (IC ) VCE = 5V, f = 10kHz 20 BC 856...860 EHP00389 dB F 15 R S = 1 MΩ 100 k Ω 10 500 Ω 10 kΩ 5 1 kΩ 0 10-3 10 -2 10 -1 10 0 mA 10 1 ΙC 8 Sep-28-1999