BC846ALT1 Series BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V http://onsemi.com ESD Rating – Machine Model: >400 V COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage Vdc VCBO Vdc 80 50 30 BC846 BC847, BC850 BC848, BC849 6.0 6.0 5.0 100 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board (Note 1.) TA = 25°C Derate above 25°C PD 225 mW THERMAL CHARACTERISTICS Total Device Dissipation Alumina Substrate (Note 2.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 2.) Junction and Storage Temperature Range MARKING DIAGRAM xx M 2 Vdc IC Thermal Resistance, Junction to Ambient (Note 1.) 3 1 VEBO Collector Current – Continuous 2 EMITTER 65 45 30 BC846 BC847, BC850 BC848, BC849 Emitter–Base Voltage 1 BASE Unit VCEO BC846 BC847, BC850 BC848, BC849 Collector–Base Voltage Value xx SOT–23 CASE 318 STYLE 6 M = Device Code = (See Table) = Date Code ORDERING INFORMATION Device Package Shipping BC846ALT1 SOT–23 3000/Tape & Reel BC846ALT3 SOT–23 10,000/Tape & Reel BC846BLT1 SOT–23 3000/Tape & Reel BC846BLT3 SOT–23 10,000/Tape & Reel BC847ALT1 SOT–23 3000/Tape & Reel 1.8 mW/°C RJA 556 °C/W PD 300 mW BC847BLT1 SOT–23 3000/Tape & Reel 2.4 mW/°C BC847CLT1 SOT–23 3000/Tape & Reel RJA 417 °C/W BC847CLT3 SOT–23 10,000/Tape & Reel TJ, Tstg –55 to +150 °C BC848ALT1 SOT–23 3000/Tape & Reel BC848BLT1 SOT–23 3000/Tape & Reel BC848BLT3 SOT–23 10,000/Tape & Reel BC848CLT1 SOT–23 3000/Tape & Reel BC849BLT1 SOT–23 3000/Tape & Reel BC849CLT1 SOT–23 3000/Tape & Reel BC850BLT1 SOT–23 3000/Tape & Reel BC850CLT1 SOT–23 3000/Tape & Reel DEVICE MARKING BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F; BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L; BC849BLT1 = 2B; BC849CLT1 = 2C; BC850BLT1 = 2F; BC850CLT1 = 2G 1. FR–5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 April, 2001 – Rev. 3 1 Publication Order Number: BC846ALT1/D BC846ALT1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage BC846A,B BC847A,B,C, BC850B,C (IC = 10 mA) BC848A,B,C, BC849B,C V(BR)CEO 65 45 30 – – – – – – V Collector–Emitter Breakdown Voltage BC846A,B (IC = 10 µA, VEB = 0) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C V(BR)CES 80 50 30 – – – – – – V Collector–Base Breakdown Voltage (IC = 10 A) BC846A,B BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C V(BR)CBO 80 50 30 – – – – – – V Emitter–Base Breakdown Voltage (IE = 1.0 A) BC846A,B BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C V(BR)EBO 6.0 6.0 5.0 – – – – – – V ICBO – – – – 15 5.0 nA µA hFE – – – 90 150 270 – – – – 110 200 180 290 220 450 420 520 800 OFF CHARACTERISTICS Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) ON CHARACTERISTICS DC Current Gain (IC = 10 µA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C BC846A, BC847A, BC848A BC846B, BC847B, BC848B, BC849B, BC850B BC847C, BC848C, BC849C, BC850C Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) – – – – 0.25 0.6 V Base–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) – – 0.7 0.9 – – V Base–Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base–Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580 – 660 – 700 770 mV fT 100 – – MHz Cobo – – 4.5 pF – – – – 10 4.0 SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) NF BC846A,B, BC847A,B,C, BC848A,B,C BC849B,C, BC850B,C http://onsemi.com 2 dB BC846ALT1 Series BC847, BC848, BC849, BC850 1.0 VCE = 10 V TA = 25°C 1.5 TA = 25°C 0.9 0.8 1.0 0.8 0.6 0.4 VBE(sat) @ IC/IB = 10 0.7 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.2 0.5 50 2.0 5.0 10 1.0 20 IC, COLLECTOR CURRENT (mAdc) 100 0 0.1 200 2.0 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA 0.8 IC = 50 mA IC = 100 mA 0.4 0 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) 1.0 -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 20 Cib Cob 2.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) C, CAPACITANCE (pF) TA = 25°C 3.0 1.0 100 Figure 4. Base–Emitter Temperature Coefficient 10 5.0 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 Figure 3. Collector Saturation Region 7.0 50 70 100 Figure 2. “Saturation” and “On” Voltages θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) Figure 1. Normalized DC Current Gain 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) Figure 5. Capacitances 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 6. Current–Gain – Bandwidth Product http://onsemi.com 3 50 BC846ALT1 Series BC846 TA = 25°C VCE = 5 V TA = 25°C 0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) 1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4 0.2 0.2 VCE(sat) @ IC/IB = 10 0 10 100 1.0 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.5 0.2 1.0 2.0 TA = 25°C 1.6 20 mA 50 mA 100 mA 200 mA 1.2 IC = 10 mA 0.8 0.4 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20 Cib 10 6.0 Cob 0.1 0.2 0.5 5.0 1.0 2.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 200 -1.4 -1.8 50 θVB for VBE -55°C to 125°C -2.2 -2.6 -3.0 f, T CURRENT-GAIN - BANDWIDTH PRODUCT C, CAPACITANCE (pF) TA = 25°C 2.0 200 0.5 0.2 10 20 5.0 1.0 2.0 IC, COLLECTOR CURRENT (mA) Figure 10. Base–Emitter Temperature Coefficient 40 4.0 100 -1.0 Figure 9. Collector Saturation Region 20 50 Figure 8. “On” Voltage θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain 10 20 2.0 5.0 IC, COLLECTOR CURRENT (mA) VCE = 5 V TA = 25°C 500 200 100 50 20 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) 100 Figure 11. Capacitance Figure 12. Current–Gain – Bandwidth Product http://onsemi.com 4 BC846ALT1 Series INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT–23 SOT–23 POWER DISSIPATION into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. The power dissipation of the SOT–23 is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows: PD = PD = 150°C – 25°C 556°C/W = 225 milliwatts The 556°C/W for the SOT–23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values SOLDERING PRECAUTIONS • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 5 BC846ALT1 Series PACKAGE DIMENSIONS SOT–23 TO–236AB CASE 318–09 ISSUE AF A L 3 1 V B 2 S DIM A B C D G H J K L S V G C D H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0385 0.0498 0.0140 0.0200 0.0670 0.0826 0.0040 0.0098 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR http://onsemi.com 6 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.99 1.26 0.36 0.50 1.70 2.10 0.10 0.25 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 BC846ALT1 Series Notes http://onsemi.com 7 BC846ALT1 Series Thermal Clad is a registered trademark of the Bergquist Company ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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