ETC BC846ALT1/D

BC846ALT1 Series
BC846, BC847 and BC848 are Preferred Devices
General Purpose
Transistors
NPN Silicon
• Moisture Sensitivity Level: 1
• ESD Rating – Human Body Model: >4000 V
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ESD Rating – Machine Model: >400 V
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Vdc
VCBO
Vdc
80
50
30
BC846
BC847, BC850
BC848, BC849
6.0
6.0
5.0
100
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board
(Note 1.)
TA = 25°C
Derate above 25°C
PD
225
mW
THERMAL CHARACTERISTICS
Total Device Dissipation
Alumina Substrate (Note 2.)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient (Note 2.)
Junction and Storage
Temperature Range
MARKING DIAGRAM
xx M
2
Vdc
IC
Thermal Resistance,
Junction to Ambient (Note 1.)
3
1
VEBO
Collector Current – Continuous
2
EMITTER
65
45
30
BC846
BC847, BC850
BC848, BC849
Emitter–Base Voltage
1
BASE
Unit
VCEO
BC846
BC847, BC850
BC848, BC849
Collector–Base Voltage
Value
xx
SOT–23
CASE 318
STYLE 6
M
= Device Code
= (See Table)
= Date Code
ORDERING INFORMATION
Device
Package
Shipping
BC846ALT1
SOT–23
3000/Tape & Reel
BC846ALT3
SOT–23
10,000/Tape & Reel
BC846BLT1
SOT–23
3000/Tape & Reel
BC846BLT3
SOT–23
10,000/Tape & Reel
BC847ALT1
SOT–23
3000/Tape & Reel
1.8
mW/°C
RJA
556
°C/W
PD
300
mW
BC847BLT1
SOT–23
3000/Tape & Reel
2.4
mW/°C
BC847CLT1
SOT–23
3000/Tape & Reel
RJA
417
°C/W
BC847CLT3
SOT–23
10,000/Tape & Reel
TJ, Tstg
–55 to
+150
°C
BC848ALT1
SOT–23
3000/Tape & Reel
BC848BLT1
SOT–23
3000/Tape & Reel
BC848BLT3
SOT–23
10,000/Tape & Reel
BC848CLT1
SOT–23
3000/Tape & Reel
BC849BLT1
SOT–23
3000/Tape & Reel
BC849CLT1
SOT–23
3000/Tape & Reel
BC850BLT1
SOT–23
3000/Tape & Reel
BC850CLT1
SOT–23
3000/Tape & Reel
DEVICE MARKING
BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F;
BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L;
BC849BLT1 = 2B; BC849CLT1 = 2C; BC850BLT1 = 2F; BC850CLT1 = 2G
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2001
April, 2001 – Rev. 3
1
Publication Order Number:
BC846ALT1/D
BC846ALT1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage BC846A,B
BC847A,B,C, BC850B,C
(IC = 10 mA)
BC848A,B,C, BC849B,C
V(BR)CEO
65
45
30
–
–
–
–
–
–
V
Collector–Emitter Breakdown Voltage BC846A,B
(IC = 10 µA, VEB = 0)
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
V(BR)CES
80
50
30
–
–
–
–
–
–
V
Collector–Base Breakdown Voltage
(IC = 10 A)
BC846A,B
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
V(BR)CBO
80
50
30
–
–
–
–
–
–
V
Emitter–Base Breakdown Voltage
(IE = 1.0 A)
BC846A,B
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
V(BR)EBO
6.0
6.0
5.0
–
–
–
–
–
–
V
ICBO
–
–
–
–
15
5.0
nA
µA
hFE
–
–
–
90
150
270
–
–
–
–
110
200
180
290
220
450
420
520
800
OFF CHARACTERISTICS
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = 10 µA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B,
BC849B, BC850B
BC847C, BC848C, BC849C, BC850C
Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VCE(sat)
–
–
–
–
0.25
0.6
V
Base–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VBE(sat)
–
–
0.7
0.9
–
–
V
Base–Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base–Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
–
660
–
700
770
mV
fT
100
–
–
MHz
Cobo
–
–
4.5
pF
–
–
–
–
10
4.0
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure (IC = 0.2 mA,
VCE = 5.0 Vdc, RS = 2.0 kΩ,
f = 1.0 kHz, BW = 200 Hz)
NF
BC846A,B, BC847A,B,C, BC848A,B,C
BC849B,C, BC850B,C
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2
dB
BC846ALT1 Series
BC847, BC848, BC849, BC850
1.0
VCE = 10 V
TA = 25°C
1.5
TA = 25°C
0.9
0.8
1.0
0.8
0.6
0.4
VBE(sat) @ IC/IB = 10
0.7
V, VOLTAGE (VOLTS)
hFE , NORMALIZED DC CURRENT GAIN
2.0
VBE(on) @ VCE = 10 V
0.6
0.5
0.4
0.3
0.2
0.3
VCE(sat) @ IC/IB = 10
0.1
0.2
0.2
0.5
50
2.0
5.0 10
1.0
20
IC, COLLECTOR CURRENT (mAdc)
100
0
0.1
200
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC =
IC =
10 mA 20 mA
0.8
IC = 50 mA
IC = 100 mA
0.4
0
0.02
10
0.1
1.0
IB, BASE CURRENT (mA)
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
20
Cib
Cob
2.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
20
40
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
C, CAPACITANCE (pF)
TA = 25°C
3.0
1.0
100
Figure 4. Base–Emitter Temperature Coefficient
10
5.0
10
1.0
IC, COLLECTOR CURRENT (mA)
0.2
Figure 3. Collector Saturation Region
7.0
50 70 100
Figure 2. “Saturation” and “On” Voltages
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
Figure 1. Normalized DC Current Gain
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
Figure 6. Current–Gain – Bandwidth Product
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3
50
BC846ALT1 Series
BC846
TA = 25°C
VCE = 5 V
TA = 25°C
0.8
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
1.0
2.0
1.0
0.5
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 5.0 V
0.4
0.2
0.2
VCE(sat) @ IC/IB = 10
0
10
100
1.0
IC, COLLECTOR CURRENT (mA)
0.1 0.2
0.5
0.2
1.0
2.0
TA = 25°C
1.6
20 mA
50 mA
100 mA
200 mA
1.2
IC =
10 mA
0.8
0.4
0
0.02
0.05
0.1
0.2
0.5
1.0 2.0
IB, BASE CURRENT (mA)
5.0
10
20
Cib
10
6.0
Cob
0.1
0.2
0.5
5.0
1.0 2.0
10 20
VR, REVERSE VOLTAGE (VOLTS)
50
100
200
-1.4
-1.8
50
θVB for VBE
-55°C to 125°C
-2.2
-2.6
-3.0
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT
C, CAPACITANCE (pF)
TA = 25°C
2.0
200
0.5
0.2
10 20
5.0
1.0 2.0
IC, COLLECTOR CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
40
4.0
100
-1.0
Figure 9. Collector Saturation Region
20
50
Figure 8. “On” Voltage
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. DC Current Gain
10 20
2.0
5.0
IC, COLLECTOR CURRENT (mA)
VCE = 5 V
TA = 25°C
500
200
100
50
20
1.0
5.0 10
50 100
IC, COLLECTOR CURRENT (mA)
100
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
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4
BC846ALT1 Series
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 225 milliwatts.
The power dissipation of the SOT–23 is a function of the
drain pad size. This can vary from the minimum pad size
for soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, RθJA, the thermal resistance from
the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data
sheet for the SOT–23 package, PD can be calculated as
follows:
PD =
PD =
150°C – 25°C
556°C/W
= 225 milliwatts
The 556°C/W for the SOT–23 package assumes the use of
the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts.
There are other alternatives to achieving higher power
dissipation from the SOT–23 package. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Clad. Using a board material such
as Thermal Clad, an aluminum core board, the power
dissipation can be doubled using the same footprint.
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
SOLDERING PRECAUTIONS
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
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5
BC846ALT1 Series
PACKAGE DIMENSIONS
SOT–23
TO–236AB
CASE 318–09
ISSUE AF
A
L
3
1
V
B
2
S
DIM
A
B
C
D
G
H
J
K
L
S
V
G
C
D
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
K
J
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0385 0.0498
0.0140 0.0200
0.0670 0.0826
0.0040 0.0098
0.0034 0.0070
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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6
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.99
1.26
0.36
0.50
1.70
2.10
0.10
0.25
0.085
0.177
0.45
0.60
0.89
1.02
2.10
2.50
0.45
0.60
BC846ALT1 Series
Notes
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7
BC846ALT1 Series
Thermal Clad is a registered trademark of the Bergquist Company
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
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alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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BC846ALT1/D