ETC BC856A/T1

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BC856; BC857; BC858
PNP general purpose transistors
Product specification
Supersedes data of 1999 Apr 12
2002 Feb 04
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856; BC857; BC858
PINNING
FEATURES
• Low current (max. 100 mA)
PIN
• Low voltage (max. 65 V).
APPLICATIONS
DESCRIPTION
1
base
2
emitter
3
collector
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BC846, BC847 and BC848.
handbook, halfpage
3
3
MARKING
TYPE NUMBER
1
MARKING CODE(1)
BC856
3D*
BC856A
3A*
BC856B
3B*
BC857
3H*
BC857A
3E*
BC857B
3F*
BC857C
3G*
BC858B
3K*
2
1
Top view
Fig.1
Note
1. * = -: made in Hong Kong.
* = t: made in Malaysia.
2002 Feb 04
2
2
MAM256
Simplified outline (SOT23) and symbol.
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856; BC857; BC858
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
VCBO
VCEO
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
UNIT
open emitter
BC856
−
−80
V
BC857
−
−50
V
BC858
−
−30
V
BC856
−
−65
V
BC857
−
−45
V
BC858
−
−30
V
−
−5
V
collector-emitter voltage
open base
VEBO
emitter-base voltage
open collector
IC
collector current (DC)
−
−100
mA
ICM
peak collector current
−
−200
mA
IBM
peak base current
−
−200
mA
Ptot
total power dissipation
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
in free air; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
2002 Feb 04
3
VALUE
UNIT
500
K/W
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856; BC857; BC858
CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
UNIT
−
−1
−15
nA
−
−
−4
µA
−
−
−100
nA
BC856
125
−
475
BC857
125
−
800
BC856A; BC857A
125
−
250
BC856B; BC857B; BC858B
220
−
475
BC857C
420
−
800
VEB = −5 V; IC = 0
hFE
DC current gain
IC = −2 mA; VCE = −5 V
VBE
MAX.
VCB = −30 V; IE = 0
emitter-base cut-off current
VBEsat
TYP.
VCB = −30 V; IE = 0;
Tj = 150 °C
collector-base cut-off current
IEBO
VCEsat
MIN.
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter voltage
IC = −10 mA; IB = −0.5 mA −
−75
−300
mV
IC = −100 mA; IB = −5 mA; −
note 1
−250
−650
mV
IC = −10 mA; IB = −0.5 mA −
−700
−
mV
IC = −100 mA; IB = −5 mA; −
note 1
−850
−
mV
IC = −2 mA; VCE = −5 V
−600
−650
−750
mV
IC = −10 mA; VCE = −5 V
−
−
−820
mV
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0;
f = 1 MHz
−
4.5
−
pF
fT
transition frequency
VCE = −5 V; IC = −10 mA;
f = 100 MHz
100
−
−
MHz
F
noise figure
IC = −200 µA; VCE = −5 V;
RS = 2 kΩ; f = 1 kHz;
B = 200 Hz
−
2
10
dB
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2002 Feb 04
4
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856; BC857; BC858
MGT711
500
MGT712
−1200
VBE
(mV)
−1000
handbook, halfpage
handbook, halfpage
hFE
400
(1)
(1)
−800
300
(2)
−600
(2)
200
(3)
−400
(3)
100
−200
0
−10−2
−10−1
−1
−10
0
−10−2
−102
−103
I C (mA)
−10−1
BC857A; VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
BC857A; VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.2
Fig.3
DC current gain as a function of collector
current; typical values.
MGT713
−104
handbook, halfpage
VCEsat
(mV)
−1200
VBEsat
(mV)
−1000
−103
−800
−1
−10
−102
−103
I C (mA)
Base-emitter voltage as a function of
collector current; typical values.
MGT714
handbook, halfpage
(1)
(2)
(3)
−600
−102
−400
(1)
−200
(3) (2)
−10
−10−1
−1
−10
0
−10−1
−102
−103
I C (mA)
−1
BC857A; IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
BC857A; IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.4
Fig.5
Collector-emitter saturation voltage as a
function of collector current; typical values.
2002 Feb 04
5
−10
−102
−103
I C (mA)
Base-emitter saturation voltage as a
function of collector current; typical values.
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856; BC857; BC858
MGT715
1000
MGT716
−1200
VBE
(mV)
−1000
handbook, halfpage
handbook, halfpage
hFE
800
(1)
−800
600
(2)
(1)
−600
400
200
0
−10−2
−10−1
(2)
−400
(3)
−200
−1
−10
(3)
0
−10−2
−102
−103
I C (mA)
−10−1
BC857B; VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
BC857B; VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.6
Fig.7
DC current gain as a function of collector
current; typical values.
MGT717
−104
handbook, halfpage
VCEsat
(mV)
−1200
VBEsat
(mV)
−1000
−103
−800
−1
−10
−102
−103
I C (mA)
Base-emitter voltage as a function of
collector current; typical values.
MGT718
handbook, halfpage
(1)
(2)
−600
(3)
−400
−102
(1)
−200
(3) (2)
−10
−10−1
−1
−10
0
−10−1
−102
−103
I C (mA)
−1
BC857B; IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
BC857B; IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.8
Fig.9
Collector-emitter saturation voltage as a
function of collector current; typical values.
2002 Feb 04
6
−10
−102
−103
I C (mA)
Base-emitter saturation voltage as a
function of collector current; typical values.
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856; BC857; BC858
MGT719
1000
MGT720
−1200
VBE
(mV)
−1000
handbook, halfpage
handbook, halfpage
hFE
(1)
800
(1)
−800
600
(2)
(2)
−600
400
−400
(3)
(3)
200
0
−10−2
−200
−10−1
−1
−10
0
−10−1
−102
−103
I C (mA)
−1
−10
−102
−103
I C (mA)
BC857C; VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
BC857C; VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.10 DC current gain as a function of collector
current; typical values.
Fig.11 Base-emitter voltage as a function of
collector current; typical values.
MGT721
−104
handbook, halfpage
VCEsat
(mV)
−1200
VBEsat
(mV)
−1000
−103
−800
MGT722
handbook, halfpage
(1)
(2)
−600
(3)
−400
−102
(1)
−200
(3) (2)
−10
−10−1
−1
−10
0
−10−1
−102
−103
I C (mA)
−1
−10
−102
−103
I C (mA)
BC857C; IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
BC857C; IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.12 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.13 Base-emitter saturation voltage as a
function of collector current; typical values.
2002 Feb 04
7
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856; BC857; BC858
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2002 Feb 04
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
TO-236AB
8
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856; BC857; BC858
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2002 Feb 04
9
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856; BC857; BC858
NOTES
2002 Feb 04
10
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856; BC857; BC858
NOTES
2002 Feb 04
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected]
SCA74
© Koninklijke Philips Electronics N.V. 2002
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Printed in The Netherlands
613514/04/pp12
Date of release: 2002
Feb 04
Document order number:
9397 750 09167