STP24NF10 STB24NF10 N-CHANNEL 100V - 0.055Ω - 26A TO-220 / D2PAK LOW GATE CHARGE STripFET II POWER MOSFET ■ ■ ■ ■ TYPE VDSS RDS(on) ID STP24NF10 STB24NF10 100 V 100 V < 0.060 Ω < 0.060 Ω 26 A 26 A TYPICAL RDS(on) = 0.055Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 3 1 3 1 2 D2PAK TO-220 DESCRIPTION This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH-EFFICIENCY DC-DC CONVERTERS ■ UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Value Unit Drain-source Voltage (VGS = 0) Parameter 100 V Drain-gate Voltage (RGS = 20 kΩ) 100 V Gate- source Voltage ±20 V ID Drain Current (continuos) at TC = 25°C 26 A ID Drain Current (continuos) at TC = 100°C 18 A Drain Current (pulsed) 104 A Total Dissipation at TC = 25°C 85 W 0.57 W/°C 9 V/ns 220 mJ – 55 to 175 °C I DM (●) PTOT Derating Factor dv/dt (1) Peak Diode Recovery voltage slope EAS (2) Single Pulse Avalanche Energy Tstg Tj Storage Temperature Operating Junction Temperature ( ●) Pulse width limi ted by safe operating area April 2002 (1) ISD ≤24A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, Tj ≤ TJMAX. (2) Starting Tj = 25°C, ID = 12A, VDD = 30V 1/10 STP24NF10 - STB24NF10 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.76 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 Zero Gate Voltage Drain Current (V GS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA Gate-body Leakage Current (VDS = 0) VGS = ±20V ±100 nA 100 V ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA R DS(on) Static Drain-source On Resistance VGS = 10V, ID = 12 A Min. Typ. Max. Unit 2 3 4 V 0.055 0.060 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) 2/10 Parameter Test Conditions Min. Forward Transconductance VDS = 15V, ID = 12 A 10 S C iss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 870 pF Coss Output Capacitance 125 pF Crss Reverse Transfer Capacitance 50 pF STP24NF10 - STB24NF10 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Q gd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions Min. Typ. Max. Unit VDD = 50V, ID = 12 A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) 60 ns 45 ns VDD = 80 V, I D = 24 A, VGS = 10V 30 6 10 41 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Condit ions Min. 50 20 VDD = 50 V, ID = 12 A, R G = 4.7Ω, VGS = 10V (see test circuit, Figure 3) ns ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 24 A, V GS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 24 A, di/dt = 100A/µs, VDD = 30 V, T j = 150°C (see test circuit, Figure 5) IRRM Typ. Source-drain Current ISDM (2) trr Qrr Min. 100 375 7.5 Max. Unit 26 A 104 A 1.5 V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedence 3/10 STP24NF10 - STB24NF10 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/10 STP24NF10 - STB24NF10 Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/10 STP24NF10 - STB24NF10 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10 STP24NF10 - STB24NF10 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 0.027 0.409 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 7/10 STP24NF10 - STB24NF10 D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.015 0º 8º 3 V2 0.4 8/10 1 STP24NF10 - STB24NF10 D2 PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. DIM. mm inch A0 MIN. 10.5 MAX. MIN. MAX. 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 E 1.59 1.65 1.61 1.85 0.062 0.063 0.065 0.073 F K0 11.4 4.8 11.6 5.0 0.449 0.456 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 R 1.9 50 2.1 0.075 0.082 1.574 T W 0.25 23.7 0.35 0.0098 0.0137 24.3 0.933 0.956 MIN. 330 MAX. A B 1.5 C D 12.8 20.2 13.2 0.504 0.520 0795 G 24.4 26.4 0.960 1.039 N 100 T TAPE MECHANICAL DATA MAX. inch BASE QTY 1000 12.992 0.059 3.937 30.4 1.197 BULK QTY 1000 * on sales type 9/10 STP24NF10 - STB24NF10 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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