ETC BFR540/T1

DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
BFR540
NPN 9 GHz wideband transistor
Product specification
Supersedes data of 1999 Aug 23
2000 May 30
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
FEATURES
DESCRIPTION
• High power gain
NPN silicon planar epitaxial transistor
in a SOT23 plastic package.
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability.
APPLICATIONS
RF front end wideband applications in
the GHz range, such as analog and
digital cellular telephones, cordless
telephones (CT1, CT2, DECT, etc.),
radar detectors, satellite TV tuners
(SATV), MATV/CATV amplifiers and
repeater amplifiers in fibre-optic
systems.
3
fpage
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
1
2
Top view
collector
MSB003
Marking code: N29.
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−
20
V
RBE = 0
−
−
15
V
−
−
120
mA
−
−
500
mW
VCES
collector-emitter voltage
IC
DC collector current
Ptot
total power dissipation
Ts ≤ 70 °C; note 1
hFE
DC current gain
IC = 40 mA; VCE = 8 V
100
120
250
Cre
feedback capacitance
IC = ic = 0; VCB = 8 V; f = 1 MHz
−
0.6
−
pF
fT
transition frequency
IC = 40 mA; VCE = 8 V; f = 1 GHz
−
9
−
GHz
GUM
maximum unilateral
power gain
IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
−
14
−
dB
IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
−
7
−
dB
s212
insertion power gain
IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
12
13
−
dB
F
noise figure
Γs = Γopt; IC = 10 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
−
1.3
1.8
dB
Γs = Γopt; IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
−
1.9
2.4
dB
Γs = Γopt; IC = 10 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
−
2.1
−
dB
Note
1. Ts is the temperature at the soldering point of the collector tab.
2000 May 30
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCES
collector-emitter voltage
RBE = 0
−
15
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
DC collector current
−
120
mA
Ptot
total power dissipation
−
500
mW
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
175
°C
Ts ≤ 70 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
from junction to soldering point
CONDITIONS
see note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
2000 May 30
3
VALUE
UNIT
260
K/W
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
ICBO
collector cut-off current
IE = 0; VCB = 8 V
−
−
50
hFE
DC current gain
IC = 40 mA; VCE = 8 V
100
120
250
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
2
−
Cc
collector capacitance
IE = ie = 0; VCB = 8 V; f = 1 MHz
−
0.9
−
pF
Cre
feedback capacitance
IC = 0; VCB = 8 V; f = 1 MHz
−
0.6
−
pF
fT
transition frequency
IC = 40 mA; VCE = 8 V; f = 1 GHz
−
9
−
GHz
GUM
maximum unilateral
power gain; note 1
IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
−
14
−
dB
IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
−
7
−
dB
nA
pF
|s21|2
insertion power gain
IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
12
13
−
dB
F
noise figure
Γs = Γopt; IC = 10 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
−
1.3
1.8
dB
Γs = Γopt; IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
−
1.9
2.4
dB
Γs = Γopt; IC = 10 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
−
2.1
−
dB
PL1
output power at 1 dB gain
compression
IC = 40 mA; VCE = 8 V; RL = 50 Ω;
Tamb = 25 °C; f = 900 MHz
−
21
−
dBm
ITO
third order intercept point
note 2
−
34
−
dBm
Vo
output voltage; note 3
IC = 40 mA; VCE = 8 V;
ZL = ZS = 75 Ω; Tamb = 25 °C
−
550
−
mV
Notes
1. GUM is the maximum unilateral power gain, assuming s12 is zero and
2
s 21
G UM = 10 log ------------------------------------------------------- dB.
2
2
( 1 – s 11 ) ( 1 – s 22 )
2. IC = 40 mA; VCE = 8 V; RL = 50 Ω;
Tamb = 25 °C; f = 900 MHz;
fp = 900 MHz; fq = 902 MHz;
measured at f(2p−q) = 898 MHz and f(2q−p) = 904 MHz.
3. dim = −60 dB (DIN 45004B);
Vp = VO; Vq = VO −6 dB; f p = 795.25 MHz;
VR = VO −6 dB; fq = 803.25 MHz; fr = 805.25 MHz;
measured at f(p+q-r) = 793.25 MHz; preliminary data.
2000 May 30
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
MRA687
MEA398 - 1
600
1/2 page (Datasheet)
250
handbook, halfpage
hFE
22 mm
P tot
(mW)
200
400
150
100
200
50
0
0
50
150
100
Ts
0
10−2
200
( o C)
10−1
10 I (mA) 102
C
1
VCE = 8 V.
Fig.3
Fig.2 Power derating curve.
MRA688
1.0
Cre
(pF)
DC current gain as a function of collector
current.
MRA689
12
handbook, halfpage
handbook, halfpage
fT
(GHz)
0.8
VCE = 8V
8
0.6
VCE = 4V
0.4
4
0.2
0
0
4
8
VCB (V)
0
10−1
12
1
IC = 0; f = 1 MHz.
Tamb = 25 °C; f = 1 GHz.
Fig.4
Fig.5
Feedback capacitance as a function of
collector-base voltage.
2000 May 30
5
10
IC (mA)
102
Transition frequency as a function of
collector current.
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
In Figs 6 to 9, GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available
gain.
MRA690
25
MRA691
25
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
20
20
Gmax
MSG
15
15
GUM
10
10
5
5
0
Gmax
GUM
0
0
20
40
IC (mA)
60
0
VCE = 8 V; f = 900 MHz.
20
40
IC (mA)
VCE = 8 V; f = 2 GHz.
Fig.6 Gain as a function of collector current.
Fig.7 Gain as a function of collector current.
MRA692
MRA693
50
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
GUM
40
GUM
40
MSG
MSG
30
60
30
20
20
Gmax
10
0
10
102
103
f (MHz)
0
10
104
VCE = 8 V; Ic = 10 mA.
102
103
f (MHz)
104
VCE = 8 V; Ic = 40 mA.
Fig.8 Gain as a function of frequency.
2000 May 30
Gmax
10
Fig.9 Gain as a function of frequency.
6
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
MRA698
BFR540
MRA699
Fmin
20
Gass
handbook, halfpage
(dB)
4
(dB)
15
(dB)
4
5
handbook, halfpage
f = 900 MHz
5
Fmin
Gass
40 mA
20
Gass
(dB)
15
Gass
1000 MHz
2000 MHz 10
3
IC = 10 mA
10
3
2000 MHz
5
2
1000 MHz
900 MHz
500 MHz
1
40 mA
0
10
1
−5
102
0
1
5
2
Fmin
IC (mA)
10 mA
Fmin
0
0
102
VCE = 8 V.
103
−5
104
VCE = 8 V.
Fig.10 Minimum noise figure and associated
available gain as functions of collector
current.
Fig.11 Minimum noise figure and associated
available gain as functions of frequency.
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
pot. unst.
region
Fmin = 1.3 dB
0.2
0.4
5
ΓOPT
180°
0.2
0
0.5
0.2
1
2
5
0°
F = 1.5 dB
stability
circle
0
F = 2 dB
5
0.2
F = 3 dB
−135°
0.5
2
−45°
1
MRA700
Zo = 50 Ω.
VCE = 8 V; IC = 10 mA; f = 900 MHz.
−90°
Fig.12 Noise circle figure.
2000 May 30
f (MHz)
7
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
G = 5 dB
Gmax = 7.8 dB
G = 7 dB
G = 6 dB
0.4
5
Γ MS
180°
0.2
0.2
0
0.5
1
2
5
0°
0
Fmin = 2.1 dB
Γ OPT
0.2
5
F = 2.5 dB
F = 3 dB
−135°
0.5
F = 4 dB
2
−45°
1
MRA701
Zo = 50 Ω.
VCE = 8 V; IC = 10 mA; f = 2000 MHz.
−90°
Fig.13 Noise circle figure.
2000 May 30
8
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
3 GHz
0.2
180°
0.2
0
0.5
1
2
0.2
5
0°
5
40 MHz
0.5
−135°
2
0
−45°
1
MRA694
−90°
VCE = 8 V; IC = 40 mA.
Zo = 50 Ω.
Fig.14 Common emitter input reflection coefficient (s11).
90°
handbook, full pagewidth
135°
45°
40 MHz
3 GHz
180°
50
40
30
20
0°
10
−135°
−45°
−90°
MRA695
VCE = 8 V; IC = 40 mA.
Fig.15 Common emitter forward transmission coefficient (s21).
2000 May 30
9
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
90°
handbook, full pagewidth
135°
45°
3 GHz
40 MHz
180°
0.5
0.4
0.3
0.2
0°
0.1
−135°
−45°
−90°
MRA696
VCE = 8 V; IC = 40 mA.
Fig.16 Common emitter reverse transmission coefficient (s12).
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
5
0°
0
3 GHz
40 MHz
0.2
−135°
0.5
2
5
−45°
1
MRA697
VCE = 8 V; IC = 40 mA.
Zo = 50 Ω.
−90°
Fig.17 Common emitter output reflection coefficient (s22).
2000 May 30
10
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2000 May 30
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
TO-236AB
11
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
DATA SHEET STATUS
DATA SHEET STATUS
PRODUCT
STATUS
DEFINITIONS (1)
Objective specification
Development
This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2000 May 30
12
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
NOTES
2000 May 30
13
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
NOTES
2000 May 30
14
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
NOTES
2000 May 30
15
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SCA 69
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613516/04/pp16
Date of release: 2000
May 30
Document order number:
9397 750 07062