ETC BF909/R

DISCRETE SEMICONDUCTORS
DATA SHEET
BF909; BF909R
N-channel dual gate MOS-FETs
Product specification
File under Discrete Semiconductors, SC07
Philips Semiconductors
1995 Apr 25
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
transistor consists of an amplifier MOS-FET with source
and substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
FEATURES
• Specially designed for use at 5 V supply voltage
• High forward transfer admittance
• Short channel transistor with high forward transfer
admittance to input capacitance ratio
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
• Low noise gain controlled amplifier up to 1 GHz
• Superior cross-modulation performance during AGC.
APPLICATIONS
PINNING
• VHF and UHF applications with 3 to 7 V supply voltage
such as television tuners and professional
communications equipment.
DESCRIPTION
Enhancement type field-effect transistor in a plastic
microminiature SOT143 or SOT143R package. The
4
SYMBOL
DESCRIPTION
1
s, b
2
d
drain
3
g2
gate 2
4
g1
gate 1
source
d
d
handbook, halfpage
PIN
handbook, halfpage
3
3
4
g
g
2
g
1
2
g1
1
Top view
2
2
s,b
MAM124
1
Top view
BF909 marking code: M28.
s,b
MAM125 - 1
BF909R marking code: M29.
Fig.1 Simplified outline (SOT143) and symbol.
Fig.2 Simplified outline (SOT143R) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
drain-source voltage
−
−
7
V
ID
drain current
−
−
40
mA
Ptot
total power dissipation
−
−
200
mW
Tj
operating junction temperature
−
−
150
°C
yfs
forward transfer admittance
36
43
50
mS
Cig1-s
input capacitance at gate 1
−
3.6
4.3
pF
Crs
reverse transfer capacitance
f = 1 MHz
−
35
50
fF
F
noise figure
f = 800 MHz
−
2
2.8
dB
1995 Apr 25
2
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
7
V
ID
drain current
−
40
mA
IG1
gate 1 current
−
±10
mA
IG2
gate 2 current
−
±10
mA
Ptot
total power dissipation
BF909
up to Tamb = 50 °C; note 1 −
200
mW
BF909R
up to Tamb = 40 °C; note 1 −
see Fig.3
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
150
°C
Note
1. Device mounted on a printed-circuit board.
MLB935
250
handbook, halfpage
Ptot
(mW)
200
150
BF909R
BF909
100
50
0
0
50
100
150
200
Tamb ( oC)
Fig.3 Power derating curves.
1995 Apr 25
3
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Rth j-s
PARAMETER
CONDITIONS
VALUE
UNIT
BF909
500
K/W
BF909R
550
K/W
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
note 2
BF909
Ts = 92 °C
290
K/W
BF909R
Ts = 78 °C
360
K/W
Notes
1. Device mounted on a printed-circuit board.
2. Ts is the temperature at the soldering point of the source lead.
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)G1-SS
gate 1-source breakdown voltage
VG2-S = VDS = 0; IG1-S = 10 mA
6
15
V
V(BR)G2-SS
gate 2-source breakdown voltage
VG1-S = VDS = 0; IG2-S = 10 mA
6
15
V
V(F)S-G1
forward source-gate 1 voltage
VG2-S = VDS = 0; IS-G1 = 10 mA
0.5
1.5
V
V(F)S-G2
forward source-gate 2 voltage
VG1-S = VDS = 0; IS-G2 = 10 mA
0.5
1.5
V
VG1-S(th)
gate 1-source threshold voltage
VG2-S = 4 V; VDS = 5 V;
ID = 20 µA
0.3
1
V
VG2-S(th)
gate 2-source threshold voltage
VG1-S = VDS = 5 V; ID = 20 µA
0.3
1.2
V
IDSX
drain-source current
VG2-S = 4 V; VDS = 5 V;
RG1 = 120 kΩ; note 1
12
20
mA
IG1-SS
gate 1 cut-off current
VG1-S = 5 V; VG2-S = VDS = 0
−
50
nA
IG2-SS
gate 2 cut-off current
VG2-S = 5 V; VG1-S = VDS = 0
−
50
nA
Note
1. RG1 connects gate 1 to VGG = 5 V; see Fig.18.
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VDS = 5 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
yfs
forward transfer admittance
pulsed; Tj = 25 °C
36
43
50
mS
Cig1-s
input capacitance at gate 1
f = 1 MHz
−
3.6
4.3
pF
Cig2-s
input capacitance at gate 2
f = 1 MHz
−
2.3
3
pF
Cos
drain-source capacitance
f = 1 MHz
−
2.3
3
pF
Crs
reverse transfer capacitance f = 1 MHz
−
35
50
fF
F
noise figure
−
2
2.8
dB
1995 Apr 25
f = 800 MHz; GS = GSopt; BS = BSopt
4
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
MLB937
MLB936
30
110
handbook, halfpage
handbook, halfpage
V G2 S = 4 V 3 V
ID
Vunw
(dBµV)
2.5 V
(mA)
2V
100
20
90
10
1.5 V
1V
80
0
10
20
0
30
40
50
gain reduction (dB)
0
0.8
0.4
1.2
1.6
2.0
V G1 S (V)
VDS = 5 V; VGG = 5 V; fw = 50 MHz.
funw = 60 MHz; Tamb = 25 °C; RG1 = 120 kΩ.
Fig.4
VDS = 5 V.
Tj = 25 °C.
Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.18.
Fig.5 Transfer characteristics; typical values.
MLB938
30
handbook, halfpage
V G1 S = 1.4 V
I G1
(µA)
ID
(mA)
1.3 V
20
MLB939
200
handbook, halfpage
V G2 S = 4 V
150
3.5 V
1.2 V
3V
100
1.1 V
2.5 V
1.0 V
10
50
0.9 V
2V
0
0
0
2
4
6
8
0
10
V DS (V)
VDS = 5 V.
VG2-S = 4 V.
Tj = 25 °C.
2
V G1 S (V)
3
VDS = 5 V.
Tj = 25 °C.
Fig.7
Fig.6 Output characteristics; typical values.
1995 Apr 25
1
5
Gate 1 current as a function of gate 1
voltage; typical values.
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
MLB941
MLB940
60
25
handbook, halfpage
handbook, halfpage
ID
(mA)
20
V G2 S = 4 V
y fs
(mS)
3.5 V
3V
40
15
2.5 V
10
20
5
2V
0
0
0
10
20
I D (mA)
30
0
VDS = 5 V.
Tj = 25 °C.
Fig.8
20
40
I G1 (µA)
60
VDS = 5 V; VG2-S = 4 V.
Tj = 25 °C.
Forward transfer admittance as a
function of drain current; typical values.
Fig.9
Drain current as a function of gate 1 current;
typical values.
MLB942
16
MLB943
30
handbook, halfpage
handbook, halfpage
ID
(mA)
R G1 = 47 kΩ
ID
(mA)
68 kΩ
82 kΩ
12
100 kΩ
20
120 kΩ
150 kΩ
8
180 kΩ
220 kΩ
10
4
0
0
0
2
4
V GG (V)
6
0
VDS = 5 V; VG2-S = 4 V.
RG1 = 120 kΩ (connected to VGG); Tj = 25 °C.
4
6
V GG = V DS (V)
8
VG2-S = 4 V.
RG1 connected to VGG; Tj = 25 °C.
Fig.10 Drain current as a function of gate 1
supply voltage (= VGG); typical values;
see Fig.18.
1995 Apr 25
2
Fig.11 Drain current as a function of gate 1
(= VGG) and drain supply voltage;
typical values; see Fig.18.
6
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
MLB944
20
MLB945
40
handbook, halfpage
handbook, halfpage
ID
(mA)
16
V GG = 5 V
I G1
(µA)
4.5 V
V GG = 5 V
30
4V
4.5 V
3.5 V
12
4V
3V
3.5 V
20
3V
8
10
4
0
0
0
2
4
V G2 S (V)
6
0
VDS = 5 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG).
2
4
V G2 S (V)
6
VDS = 5 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG).
Fig.12 Drain current as a function of gate 2 voltage;
typical values; see Fig.18.
Fig.13 Gate 1 current as a function of gate 2
voltage; typical values; see Fig.18.
MLB946
10 2
handbook, halfpage
MLB947
10 3
ϕ rs
(deg)
y rs
(µS)
y is
(mS)
ϕ rs
10 2
10
10 3
10 2
b is
y rs
10
1
10
g is
10 1
10
102
f (MHz)
10
VDS = 5 V; VG2 = 4 V.
ID = 15 mA; Tamb = 25 °C.
102
f (MHz)
10 3
VDS = 5 V; VG2 = 4 V.
ID = 15 mA; Tamb = 25 °C.
Fig.14 Input admittance as a function of frequency;
typical values.
1995 Apr 25
1
1
10 3
Fig.15 Reverse transfer admittance and phase as
a function of frequency; typical values.
7
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
MLB948
10 2
MLB949
10 2
y fs
y fs
BF909; BF909R
10
handbook, halfpage
yos
(mS)
ϕ fs
bos
(deg)
(mS)
1
ϕfs
10
gos
10
10 1
10 2
10
1
1
10
102
10 3
f (MHz)
VDS = 5 V; VG2 = 4 V.
ID = 15 mA; Tamb = 25 °C.
102
10 3
VDS = 5 V; VG2 = 4 V.
ID = 15 mA; Tamb = 25 °C.
Fig.16 Forward transfer admittance and phase as
a function of frequency; typical values.
Fig.17 Output admittance as a function of
frequency; typical values.
VAGC
R1
10 k Ω
C1
4.7 nF
R GEN
50 Ω
R2
50 Ω
C3
R3
10 Ω
C2
DUT
4.7 nF
C5
2.2
pF
R G1
12 pF
L1
≈ 350 nH
RL
50 Ω
C4
4.7 nF
VI
VGG
VDS
Fig.18 Cross-modulation test set-up.
1995 Apr 25
f (MHz)
8
MLD151
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
Table 1
f
(MHz)
BF909; BF909R
Scattering parameters: Tamb = 25 °C; VDS = 5 V; VG2-S = 4 V; ID = 15 mA
s11
s21
s12
s22
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
50
0.985
−6.4
4.064
172.3
0.001
86.9
0.985
−3.2
100
0.978
−12.6
3.997
164.9
0.002
82.7
0.982
−6.4
200
0.957
−25.0
3.886
150.8
0.005
74.3
0.973
−12.6
300
0.931
−36.5
3.682
137.3
0.006
68.9
0.960
−18.6
400
0.899
−47.6
3.484
123.8
0.007
59.6
0.947
−24.2
500
0.868
−57.4
3.260
111.7
0.007
57.9
0.936
−29.6
600
0.848
−66.6
3.053
101.0
0.006
58.5
0.927
−34.8
700
0.816
−74.6
2.829
90.3
0.005
65.5
0.919
−39.8
800
0.792
−82.2
2.652
79.9
0.005
83.3
0.913
−44.6
900
0.772
−89.3
2.470
69.5
0.005
114.9
0.910
−49.5
1000
0.754
−95.6
2.328
59.5
0.006
138.7
0.909
−54.6
Table 2
Noise data: Tamb = 25 °C; VDS = 5 V; VG2-S = 4 V; ID = 15 mA
Γopt
f
(MHz)
Fmin
(dB)
(ratio)
(deg)
800
2.00
0.603
67.71
1995 Apr 25
9
rn
0.581
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
PACKAGE OUTLINES
handbook, full pagewidth
0.75
0.60
3.0
2.8
0.150
0.090
B
1.9
4
3
0.1
max
o
10
max
0.2 M A B
A
2.5
max
1.4
1.2
o
10
max
1
1.1
max
o
30
max
0.88
2
0
0.1
0.48
0
0.1
0.1 M A B
MBC845
1.7
TOP VIEW
Dimensions in mm.
Fig.19 SOT143.
3.0
2.8
handbook, full pagewidth
0.150
0.090
0.40
0.25
B
1.9
3
4
0.1
max
o
10
max
0.2 M A
A
1.4
1.2
o
2.5
max
10
max
2
1.1
max
o
30
max
1
0.48
0.38
0.88
0.78
1.7
0.1 M B
TOP VIEW
Dimensions in mm.
Fig.20 SOT143R.
1995 Apr 25
10
MBC844
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Apr 25
11
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101, Fax. +43 1 60 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 708 296 8556
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 1949
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 615 800, Fax. +358 615 80920
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 52 60, Fax. +49 40 23 536 300
Greece: No. 15, 25th March Street, GR 17778 TAVROS,
Tel. +30 1 4894 339/911, Fax. +30 1 4814 240
Hungary: see Austria
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.
Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180,
Tel. +972 3 645 0444, Fax. +972 3 648 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +1 800 234 7381, Fax. +1 708 296 8556
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 83749, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 926 5361, Fax. +7 095 564 8323
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66,
Chung Hsiao West Road, Sec. 1, P.O. Box 22978,
TAIPEI 100, Tel. +886 2 382 4443, Fax. +886 2 382 4444
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 2A Akademika Koroleva str., Office 165,
252148 KIEV, Tel. +380 44 476 0297/1642, Fax. +380 44 476 6991
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 708 296 8556
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 825 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com/ps/
(1) CGY2020G_1.mif June 26, 1996 11:51 am
© Philips Electronics N.V. 1996
SCA50
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
647021/1200/01/pp12
Date of release: 1996 Jul 17
Document order number:
9397 750 00971