STPS60L40CW ® LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF(AV) A1 K 2 x 30 A VRRM 40 V Tj (max) 150°C VF (max) 0.50 V A2 FEATURES AND BENEFITS n n n LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION NEGLIGIBLE SWITCHING LOSSES ALLOWING HIGH FREQUENCY OPERATION AVALANCHE CAPABILITY SPECIFIED A2 K A1 TO-247 DESCRIPTION Dual center tap Schottky barrier rectifier designed for high frequency Switched Mode Power Supplies and DC to DC converters. Packaged in TO-247 this device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 40 V IF(RMS) RMS forward current 50 A Per diode 30 A Per device 60 IF(AV) Average forward current Tc = 135°C δ = 0.5 600 A tp = 2 µs square F=1kHz 2 A Non repetitive peak reverse current tp = 100 µs square 4 A Repetitive peak avalanche power tp = 1µs 12300 W - 65 to + 150 °C 150 °C 10000 V/µs IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal IRRM Repetitive peak reverse current IRSM PARM Tstg Tj dV/dt * : Storage temperature range Tj = 25°C Maximum operating junction temperature * Critical rate of rise of reverse voltage dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) July 2003 - Ed: 5A 1/4 STPS60L40CW THERMAL RESISTANCES Symbol Rth (j-c) Parameter Junction to case Value 0.75 0.42 0.1 Per diode Total Rth(c) Coupling Unit °C/W °C/W When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * Parameter VF * Tests Conditions Min. Typ. Max. 1.5 Unit mA 30 110 mA 0.55 V VR = VRRM Reverse leakage current Tj = 25°C Forward voltage drop Tj = 25°C IF = 30 A Tj = 125°C IF = 30 A Tj = 100°C Tj = 25°C IF = 60 A Tj = 125°C IF = 60 A 0.44 0.5 0.73 0.64 0.72 Pulse test : * tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 0.28 x IF(AV) + 0.0073 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). 22 20 18 16 14 12 10 8 6 4 2 0 PF(av)(W) Fig. 2: Average current versus temperature (δ = 0.5) (per diode). IF(av)(A) 35 δ = 0.05 δ = 0.1 Rth(j-a)=Rth(j-c) δ = 0.5 δ = 0.2 ambient 30 δ=1 25 20 15 0 5 10 15 20 5 δ=tp/T IF(av) (A) 30 δ=tp/T tp 0 25 Rth(j-a)=15°C/W T 10 T 35 40 Fig. 3: Normalized avalanche power derating versus pulse duration. 0 25 Tamb(°C) 50 75 100 125 150 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(1µs) 1 tp 1.2 PARM(tp) PARM(25°C) 1 0.1 0.8 0.6 0.4 0.01 0.2 0.001 0.01 2/4 Tj(°C) tp(µs) 0.1 1 0 10 100 1000 0 25 50 75 100 125 150 STPS60L40CW Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) IM(A) 400 1.0 350 0.8 300 250 0.6 Tc=25°C 200 150 0.4 Tc=75°C 100 δ = 0.5 δ = 0.2 T δ = 0.1 IM 50 t(s) δ=0.5 0 1E-3 0.2 Tc=125°C t tp(s) Single pulse 1E-2 1E-1 1E+0 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). 0.0 1E-4 1E-3 δ=tp/T 1E-2 1E-1 tp 1E+0 Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) IR(mA) 1E+3 10.0 F=1MHz Tj=25°C Tj=150°C 1E+2 Tj=125°C 1E+1 Tj=100°C 1.0 1E+0 1E-1 1E-2 Tj=25°C VR(V) VR(V) 0 5 10 15 20 25 30 35 40 0.1 1 2 5 10 20 50 Fig. 9: Forward voltage drop versus forward current (per diode). IFM(A) 200 100 Typical values Tj=150°C Maximum values Tj=125°C Maximum values Tj=100°C 10 Maximum values Tj=25°C VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 3/4 STPS60L40CW PACKAGE MECHANICAL DATA TO-247 DIMENSIONS REF. V Dia. V A H L5 L L2 L4 F2 F1 L1 F3 V2 D L3 F4 F(x3) M G = n n n n E = Millimeters Min. Typ. A 4.85 D 2.20 E 0.40 F 1.00 F1 3.00 F2 2.00 F3 2.00 F4 3.00 G 10.90 H 15.45 L 19.85 L1 3.70 L2 18.50 L3 14.20 L4 34.60 L5 5.50 M 2.00 V 5° V2 60° Dia. 3.55 Inches Max. 5.15 2.60 0.80 1.40 2.40 3.40 15.75 20.15 4.30 14.80 3.00 3.65 Min. Typ. Max. 0.191 0.203 0.086 0.102 0.015 0.031 0.039 0.055 0.118 0.078 0.078 0.094 0.118 0.133 0.429 0.608 0.620 0.781 0.793 0.145 0.169 0.728 0.559 0.582 1.362 0.216 0.078 0.118 5° 60° 0.139 0.143 COOLING METHOD : C RECOMMENDED TORQUE VALUE : 0.8M.N MAXIMUM TORQUE VALUE : 1.0M.N Ordering type Marking Package Weight Base qty Delivery mode STPS60L40CW STPS60L40CW TO-247 4.4g 30 Tube EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4