ETC BIC703M

BIC703M
Bias Controlled Monolithic IC
VHF/UHF RF Amplifier
ADE-208-984D (Z)
5th. Edition
Mar. 2001
Features
• Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.);
To reduce using parts cost & PC board space.
• High |yfs| ;
|yfs| = 29 mS typ. ( f = 1kHz)
• Low noise;
NF = 1.0 dB typ. (at f = 200 MHz), NF = 1.8 dB typ. (at f = 900 MHz)
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C = 200pF, Rs = 0 conditions.
• Provide mini mold package; MPAK-4 (SOT-143Rmod)
Outline
MPAK-4
2
3
1
4
Notes:
1.
2.
1. Source
2. Gate1
3. Gate2
4. Drain
Marking is “CZ–”.
BIC703M is individual type number of HITACHI BICMIC.
BIC703M
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDS
6
V
Gate1 to source voltage
VG1S
+6
–0
V
Gate2 to source voltage
VG2S
+6
–0
V
Drain current
ID
30
mA
Channel power dissipation
Pch
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
6
—
—
V
I D = 200µA
VG2S = 0,VG1 = open
Gate1 to source breakdown
voltage
V(BR)G1SS
+6
—
—
V
I G1 = +1mA, VG2S = VDS = 0
Gate2 to source breakdown
voltage
V(BR)G2SS
+6
—
—
V
I G2 = +10µA, VG1S = VDS = 0
Gate2 to source cutoff current I G2SS
—
—
+100
nA
VG2S = +5V, V G1S = VDS = 0
Gate2 to source cutoff voltage VG2S(off)
0.8
1.1
1.5
V
VDS = 5V, ID = 100µA
VG1 = open
Drain current
I D(op)
12
15
18
mA
VDS = 5V , VG2S = 4V
VG1 = open
Forward transfer admittance
|yfs|
24
29
34
mS
VDS = 5V, ID = 15mA
VG2S =4V, f = 1kHz
Input capacitance
c iss
1.6
2.0
2.4
pF
VDS = 5V, VG2S =4V
Output capacitance
c oss
0.6
1.0
1.4
pF
VG1 = open
Reverse transfer capacitance c rss
—
0.022
0.05
pF
f = 1MHz
Power gain
PG1
23
28
—
dB
VDS = 5V, VG2S =4V
VG1 = open
Noise figure
NF1
—
1.0
1.8
dB
f = 200MHz
Power gain
PG2
17
22
—
dB
VDS = 5V, VG2S =4V
VG1 = open
Noise figure
NF2
—
1.8
2.4
dB
f = 900MHz
2
BIC703M
Test Circuits
• DC Biasing Circuit for Operating Characteristic Items (ID(op), |yfs|, Ciss, Coss, Crss, NF, PG)
VG1
VG2
Open
Gate 2
Gate 1
Drain
Source
A
ID
• 200 MHz Power Gain, Noise Figure Test Circuit
1000p
1000p
47k
VT
VG2
VT
1000p
47k
1000p
47k
BICMIC
Output(50Ω)
1000p
L2
Input(50Ω)
L1
10p max
1000p
1000p
36p
RFC
1SV70
1SV70
1000p
VD
Unit : Resistance (Ω)
Capacitance (F)
L1 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC : φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns
3
BIC703M
• 900 MHz Power Gain, Noise Figure Test Circuit
VD
VG2
C5
C4
R1
C3
R2
RFC
D
G2
Output
L3
L4
G1
Input
S
L1
L2
C1
C1, C2
C3
C4, C5
R1
R2
C2
:
:
:
:
:
Variable Capacitor (10pF MAX)
Disk Capacitor (1000pF)
Air Capacitor (1000pF)
47 kΩ
4.7 kΩ
L2:
L1:
10
3
3
8
10
26
(φ1mm Copper wire)
Unit : mm
21
L4:
L3:
18
10
10
7
7
29
RFC : φ1mm Copper wire with enamel 4turns inside dia 6mm
4
200
Maximum Channel Power
Dissipation Curve
Typical Output Characteristics
I D (mA)
VG1 = open
Drain Current
150
100
50
16
VG2S = 4 V
12
3V
8
2V
4
1V
0
50
100
150
Ambient Temperature
Forward Transfer Admittance | yfs | (mS)
20
0
200
Ta (°C)
Forward Transfer Admittance
vs. Gate1 Voltage
3
4
5
V DS (V)
30
25
40
VG1S = 4 V
20
3V
10
2V
1V
0
2
Power Gain vs.
Gate2 to Source Voltage
50
30
1
Drain to Source Voltage
Power Gain PG (dB)
Channel Power Dissipation
Pch (mW)
BIC703M
1.0
Gate1 Voltage V G1
2.0
(V)
20
15
10
5
0
1
V DS = 5 V
V G1 = open
f = 200 MHz
4
2
3
Gate2 to Source Voltage V G2S (V)
5
BIC703M
Noise Figure vs.
Gate2 to Source Voltage
Power Gain vs.
Gate2 to Source Voltage
30
4
V DS = 5 V
V G1 = open
f = 200 MHz
3
2
1
0
1
25
Power Gain PG (dB)
Noise Figure NF (dB)
5
20
15
10
5
0
1
4
2
3
Gate2 to Source Voltage V G2S (V)
Noise Figure vs.
Gate2 to Source Voltage
2
1
6
4
2
3
Gate2 to Source Voltage V G2S (V)
Input Capacitance Ciss (pF)
Noise Figure NF (dB)
4
V DS = 5 V
V G1 = open
f = 900 MHz
3
0
1
4
2
3
Gate2 to Source Voltage V G2S (V)
Input Capacitance vs.
Gate2 to Source Voltage
5
4
V DS = 5 V
V G1 = open
f = 900 MHz
3
2
1
0
V DS = 4 V
V G1 = open
f = 1 MHz
1
2
3
4
Gate2 to Source Voltage V G2S (V)
BIC703M
Gain Reduction vs.
Gate2 to Source Voltage
Gain Reduction vs.
Gate2 to Source Voltage
0
10
20
30
V DS = 5 V
V G1 = open
V G2S = 4 V
f = 200 MHz
40
50
4
2
3
1
0
Gate2 to Source Voltage V G2S (V)
Gain Reduction GR (dB)
Gain Reduction GR (dB)
0
10
20
30
V DS = 5 V
V G1 = open
V G2S = 4 V
f = 900 MHz
40
50
4
2
3
1
0
Gate2 to Source Voltage V G2S (V)
7
BIC703M
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
.8
1
.6
90°
1.5
Scale: 1 / div.
60°
120°
2
.4
3
30°
150°
4
5
.2
10
.2
0
.4
.6 .8 1
1.5 2
3 45
10
180°
0°
-10
-5
-4
- .2
-3
- .4
- 30°
- 150°
-2
- .6
- .8
-1
- 60°
- 120°
- 1.5
- 90°
Test Condition: VDS = 5 V , VG1 = open
VG2S = 4 V ,
Zo = 50 Ω
50 to 1000 MHz (50 MHz step)
Test Condition: VDS = 5 V , VG1 = open
VG2S = 4 V ,
Zo = 50 Ω
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
90°
50 to 1000 MHz (50 MHz step)
Scale: 0.004/ div.
.8
60°
120
1
.6
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1
1.5 2
3 45
10
-10
-5
-4
- .2
- 30°
- 150°
-3
- .4
- 60°
- 120°
- 90°
Test Condition: VDS = 5 V , VG1 = open
VG2S = 4 V ,
Zo = 50 Ω
50 to 1000 MHz (50 MHz step)
8
-2
- .6
- .8
-1
- 1.5
Test Condition: VDS = 5 V , VG1 = open
VG2S = 4 V ,
Zo = 50 Ω
50 to 1000 MHz (50 MHz step)
BIC703M
Sparameter (VDS = 5 V, VG2S = 4 V, VG1 = open, Zo = 50 Ω)
S11
S21
S12
S22
f (MHz) MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
50
1.000
-3.3
2.80
175.9
0.00106
58.8
0.990
-2.4
100
0.993
-7.2
2.78
170.9
0.00171
75.7
0.992
-4.7
150
0.991
-10.9
2.77
166.1
0.00253
75.1
0.991
-7.2
200
0.984
-15.0
2.74
161.2
0.00356
77.4
0.987
-9.6
250
0.978
-19.0
2.72
156.5
0.00442
78.2
0.985
-12.2
300
0.970
-22.8
2.68
151.8
0.00485
80.0
0.982
-14.7
350
0.958
-26.7
2.64
147.2
0.00576
74.7
0.978
-17.1
400
0.954
-30.3
2.60
142.7
0.00642
71.7
0.973
-19.6
450
0.945
-33.8
2.56
138.6
0.00689
73.3
0.968
-22.0
500
0.932
-37.5
2.50
134.1
0.00712
71.8
0.963
-24.2
550
0.920
-40.6
2.46
129.8
0.00765
70.7
0.958
-26.7
600
0.910
-44.3
2.41
125.7
0.00804
69.9
0.952
-28.9
650
0.900
-47.5
2.37
121.6
0.00798
69.1
0.947
-31.3
700
0.887
-50.9
2.31
117.8
0.00787
67.8
0.942
-33.4
750
0.870
-54.4
2.27
113.6
0.00785
70.8
0.936
-35.8
800
0.863
-57.6
2.22
110.0
0.00758
73.3
0.929
-37.9
850
0.853
-60.9
2.18
105.8
0.00721
75.2
0.924
-40.3
900
0.839
-63.6
2.12
102.2
0.00694
75.8
0.917
-42.5
950
0.827
-66.5
2.07
98.6
0.00716
88.1
0.912
-44.5
1000
0.819
-70.1
2.04
94.9
0.00667
92.7
0.906
-46.7
9
BIC703M
Package Dimensions
As of January, 2001
Unit: mm
+ 0.1
0.95
0.16 – 0.06
2.8
0 – 0.1
0.65
0.1
0.6 +– 0.05
0.4 – 0.05
+ 0.1
0.65
0.1
0.4 +– 0.05
1.5 ± 0.15
0.4 – 0.05
+ 0.2
– 0.6
+ 0.1
2.95 ± 0.2
1.9 ± 0.2
0.95 0.95
0.85
1.1 – 0.1
+ 0.2
0.3
1.8 ± 0.2
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
10
MPAK-4
—
Conforms
0.013 g
BIC703M
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright  Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
11