ETC BSR32

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BSR30; BSR31; BSR32; BSR33
PNP medium power transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Apr 01
Philips Semiconductors
Product specification
PNP medium power transistors
BSR30; BSR31; BSR32; BSR33
FEATURES
PINNING
• High current (max. 1 A)
PIN
• Low voltage (max. 80 V).
APPLICATIONS
DESCRIPTION
1
emitter
2
collector
3
base
• Telephony and general industrial applications
• Thick and thin-film circuits.
DESCRIPTION
handbook, halfpage
2
PNP medium power transistor in a SOT89 plastic
package. NPN complements: BSR40; BSR41;
BSR42 and BSR43.
3
1
MARKING
1
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BRS30
BR1
BRS32
BR3
BRS31
BR2
BRS33
BR4
2
3
Bottom view
MAM297
Fig.1 Simplified outline (SOT89) and symbol.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
PARAMETER
collector-base voltage
CONDITIONS
UNIT
BSR30; BSR31
−
−70
V
BSR32; BSR33
−
−90
V
BSR30; BSR31
−
−60
V
BSR32; BSR33
−
−80
V
−
−2
A
−
1.4
W
BSR30; BSR32
40
120
BSR31; BSR33
100
300
100
−
collector-emitter voltage
open base
peak collector current
Ptot
total power dissipation
Tamb ≤ 25 °C
hFE
DC current gain
IC = −100 mA; VCE = −5 V
1997 Apr 01
MAX.
open emitter
ICM
fT
MIN.
transition frequency
IC = −50 mA; VCE = −10 V; f = 100 MHz
2
MHz
Philips Semiconductors
Product specification
PNP medium power transistors
BSR30; BSR31; BSR32; BSR33
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
MAX.
UNIT
open emitter
−
−70
V
−
−90
V
BSR30; BSR31
−
−60
V
BSR32; BSR33
−
−80
V
BSR30; BSR31
BSR32; BSR33
VCEO
MIN.
collector-emitter voltage
open base
VEBO
emitter-base voltage
−
−5
V
IC
collector current (DC)
−
−1
A
ICM
peak collector current
−
−2
A
IBM
peak base current
Ptot
total power dissipation
Tstg
open collector
−
−200
mA
−
1.4
W
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for the SOT89 in the General part of handbook SC04”.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient
Rth j-s
thermal resistance from junction to soldering point
note 1
VALUE
UNIT
89
K/W
8
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for the SOT89 in the General part of handbook SC04”.
1997 Apr 01
3
Philips Semiconductors
Product specification
PNP medium power transistors
BSR30; BSR31; BSR32; BSR33
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
−
−100
nA
−
−50
µA
−
−100
nA
BSR30; BSR32
10
−
BSR31; BSR33
30
−
BSR30; BSR32
40
120
BSR31; BSR33
100
300
BSR30; BSR32
30
−
BSR31; BSR33
50
−
IC = −150 mA; IB = −15 mA; note 1
−
−0.25
IC = −500 mA; IB = −50 mA; note 1
−
−0.5
V
IC = −150 mA; IB = −15 mA; note 1
−
−1
V
IC = −500 mA; IB = −50 mA; note 1
−
−1.2
V
−
MHz
IC = 0; VEB = −5 V
hFE
DC current gain
IC = −100 µA; VCE = −5 V; note 1
DC current gain
DC current gain
VCEsat
collector-emitter saturation voltage
VBEsat
base-emitter saturation voltage
fT
transition frequency
IC = −100 mA; VCE = −5 V; note 1
IC = −500 mA; VCE = −5 V; note 1
IC = −50 mA; VCE = −10 V; f = 100 MHz 100
Note
1. Pulse test: tp = 300 µs; δ < 0.01.
1997 Apr 01
UNIT
IE = 0; VCB = −60 V
emitter cut-off current
hFE
MAX.
IE = 0; VCB = −60 V; Tj = 150 °C
collector cut-off current
IEBO
hFE
MIN.
4
V
Philips Semiconductors
Product specification
PNP medium power transistors
BSR30; BSR31; BSR32; BSR33
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
D
A
b3
E
HE
L
1
2
3
c
b2
w M
b1
e1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b1
b2
b3
c
D
E
e
e1
HE
L
min.
w
mm
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.37
4.6
4.4
2.6
2.4
3.0
1.5
4.25
3.75
0.8
0.13
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
SOT89
1997 Apr 01
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
5
Philips Semiconductors
Product specification
PNP medium power transistors
BSR30; BSR31; BSR32; BSR33
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Apr 01
6
Philips Semiconductors
Product specification
PNP medium power transistors
BSR30; BSR31; BSR32; BSR33
NOTES
1997 Apr 01
7
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© Philips Electronics N.V. 1997
SCA53
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Printed in The Netherlands
117047/00/02/pp8
Date of release: 1997 Apr 01
Document order number:
9397 750 02059