PROFET® BTS436L2
Smart High-Side Power Switch
One Channel: 38mΩ
Status Feedback
Product Summary
On-state Resistance
Operating Voltage
Nominal load current
Current limitation
Package
RON
Vbb(on)
IL(NOM)
IL(SCr)
38mΩ
4.75...41V
9.8A
40A
TO 220-5-11
TO-263-5-2
Standard
SMD
TO-220-5-12
Straight
General Description
•
•
N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
Fully protected by embedded protection functions
Applications
•
•
•
•
µC compatible high-side power switch with diagnostic feedback for 5V, 12V and 24V grounded loads
All types of resistive, inductive and capacitve loads
Most suitable for loads with high inrush currents, so as lamps
Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
•
•
•
•
•
•
Very low standby current
CMOS compatible input
Fast demagnetization of inductive loads
Stable behaviour at undervoltage
Wide operating voltage range
Logic ground independent from load ground
Block Diagram
Protection Functions
•
•
•
•
•
•
•
•
Short circuit protection
Overload protection
Current limitation
Thermal shutdown
Overvoltage protection (including load dump) with external
resistor
Reverse battery protection with external resistor
Loss of ground and loss of Vbb protection
Electrostatic discharge protection (ESD)
Diagnostic Function
•
•
•
Diagnostic feedback with open drain output
Open load detection in ON-state
Feedback of thermal shutdown in ON-state
Semiconductor Group
Page 1 of 12
Vbb
IN
ST
Logic
with
protection
functions
PROFET
OUT
Load
GND
1999-Feb-26
BTS436L2
Functional diagram
overvoltage
protection
internal
voltage supply
logic
gate
control
+
charge
pump
current limit
VBB
clamp for
inductive load
OUT
temperature
sensor
IN
ESD
LOAD
Open load
detection
ST
GND
PROFET
Pin configuration
Pin Definitions and Functions
(top view)
Pin
Symbol
Function
1
GND
Logic ground
2
IN
Input, activates the power switch in
case of logical high signal
3
Vbb
Positive power supply voltage
The tab is shorted to pin 3
4
ST
Diagnostic feedback, low on failure
Tab = VBB
1
2
GND IN
5
OUT
Output to the load
Tab
Vbb
Positive power supply voltage
The tab is shorted to pin 3
Semiconductor Group
Page 2
(3)
4
5
ST OUT
1999-Feb-26
BTS436L2
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 4)
Supply voltage for full short circuit protection
Tj Start=-40 ...+150°C
Load
dump protection1) VLoadDump = VA + Vs, VA = 13.5 V
2)
RI = 2 Ω, RL= 4.0 Ω, td= 400 ms, IN= low or high
Load current (Current limit, see page 5)
Operating temperature range
Storage temperature range
Power dissipation (DC), TC ≤ 25 °C
Maximal switchable inductance, single pulse
Values
43
24
Unit
V
V
60
V
self-limited
-40 ...+150
-55 ...+150
75
A
°C
5.0
1.0
4.0
8.0
mH
kV
VIN
IIN
IST
-10 ... +16
±2.0
±5.0
V
mA
Symbol
Values
typ
max
-- 1.75
-75
33
--
Unit
Vbb = 12V, Tj,start = 150°C, TC = 150°C const.
4
(See diagram on page 8) IL(ISO) = 9.8 A, RL = 0 Ω, E )AS=0.33J:
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
ST:
out to all other pins shorted:
Symbol
Vbb
Vbb
VLoad dump3
IL
Tj
Tstg
Ptot
ZL
VESD
W
acc. MIL-STD883D, method 3015.7 and
ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 7
Thermal Characteristics
Parameter and Conditions
Thermal resistance
1)
2)
3)
4)
5)
chip - case: RthJC
junction - ambient (free air): RthJA
device on pcb5):
min
----
K/W
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended).
RI = internal resistance of the load dump test pulse generator
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
EAS is the maximum inductive switch-off energy
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
Semiconductor Group
Page 3
1999-Feb-26
BTS436L2
Electrical Characteristics
Parameter and Conditions
Symbol
at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 2 A; VBB ≥ 7V
Tj=25 °C: RON
Tj=150 °C:
--
35
64
38
72
mΩ
8.8
9.8
--
A
--
--
2
mA
50
50
100
120
200
250
µs
dV /dton
0.1
--
1
V/µs
-dV/dtoff
0.1
--
1
V/µs
Vbb(on)
4.75
IL(off)
41
43
----
41
43
-52
8
25
10
V
Vbb(AZ)
---47
5
-1
IGND
--
0.8
1.4
see diagram, page 9
Nominal load current, (pin 3 to 5)
IL(ISO)
ISO 10483-1, 6.7:VON=0.5V, TC=85°C
Output current (pin 5) while GND disconnected or
GND pulled up, Vbb=30 V, VIN= 0,
IL(GNDhigh)
see diagram page 7 (not tested specified by design)
Turn-on time
IN
Turn-off time
IN
RL = 12 Ω,
Slew rate on
10 to 30% VOUT, RL = 12 Ω,
Slew rate off
70 to 40% VOUT, RL = 12 Ω,
to 90% VOUT: ton
to 10% VOUT: toff
Operating Parameters
Operating voltage
Tj =-40
Tj =+25...+150°C:
Overvoltage protection6)
Tj =-40°C:
Ibb=40 mA
Tj =25...+150°C:
Standby current (pin 3) 7)
Tj=-40...+25°C:
VIN=0; see diagram on page 9
Tj= 150°C:
Off-State output current (included in Ibb(off))
VIN=0
Operating current 8), VIN=5 V
6)
7)
8)
Ibb(off)
V
µA
µA
mA
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended. See also VON(CL) in table of protection functions and
circuit diagram page 7.
Measured with load
Add IST, if IST > 0, add IIN, if VIN>5.5 V
Semiconductor Group
Page 4
1999-Feb-26
BTS436L2
Parameter and Conditions
Symbol
at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified
Protection Functions
Current limit (pin 3 to 5)
Values
min
typ
max
Unit
IL(lim)
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Repetitive short circuit shutdown current limit
IL(SCr)
Tj = Tjt (see timing diagrams, page 11)
Thermal shutdown time9)
Tj,start = 25°C: toff(SC)
46
39
30
58
51
38
68
58
46
A
---
40
1.9
---
A
ms
41
43
150
---
47
-10
--
52
--32
V
°C
K
V
--
600
--
mV
IL (OL)
10
--
900
mA
RI
2.5
3.5
6
kΩ
VIN(T+)
VIN(T-)
∆ VIN(T)
IIN(off)
IIN(on)
td(ST OL4)
1.7
1.5
-1
20
100
--0.5
-50
520
3.2
--50
90
900
V
V
V
µA
µA
µs
IST = +1.6 mA: VST(high)
IST = +1.6 mA: VST(low)
5.4
--
6.1
--
-0.4
V
(see timing diagrams on page 11)
(see timing diagrams on page 11)
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL)
IL= 40 mA:
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 3 to 1) 10)
11 )
Reverse battery voltage drop (Vout > Vbb)
IL = -2 A
Tj=150 °C:
Diagnostic Characteristics
Open load detection current
VON(CL)
Tjt
∆Tjt
-Vbb
-VON(rev)
(on-condition)
Input and Status Feedback12)
Input resistance
see circuit page 7
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
Off state input current (pin 2), VIN = 0.4 V
On state input current (pin 2), VIN = 5 V
Delay time for status with open load after switch off
(see timing diagrams on page 11)
Status output (open drain)
Zener limit voltage
ST low voltage
9)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
10)
Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 3 and circuit page 7).
11)
Specified by design, not tested
12)
If a ground resistor RGND is used, add the voltage drop across this resistor.
Semiconductor Group
Page 5
1999-Feb-26
BTS436L2
Truth Table
Normal
operation
Open load
Overtemperature
L = "Low" Level
H = "High" Level
Input
Output
Status
level
L
H
L
H
L
H
level
L
H
Z
H
L
L
BTS 428L2
H
H
H
L
H
L
X = don’t care
Z = high impedance, potential depends on external circuit
Status signal after the time delay shown in the diagrams (see fig 5. page 11)
Semiconductor Group
Page 6
1999-Feb-26
BTS436L2
Overvolt. and reverse batt. protection
Terms
+ 5V
+ Vbb
Ibb
2
IN
V
IN
4
IN
IL
5
R ST ST
GND
1
R
Z2
VON
ST
bb
RI
Logic
OUT
PROFET
V ST
V
Vbb
I ST
V
R ST
3
I IN
OUT
V
IGND
Z1
PROFET
V OUT
GND
GND
R Load
R GND
Signal GND
VZ1 = 6.1 V typ., VZ2 = 47 V typ., RGND = 150 Ω,
RST= 15 kΩ, RI= 3.5 kΩ typ.
Input circuit (ESD protection)
R
IN
Load GND
I
Open-load detection in on-state
Open load, if VON < RON·IL(OL); IN high
ESD-ZD I
I
+ V bb
I
GND
The use of ESD zener diodes as voltage clamp at DC
conditions is not recommended
VON
ON
OUT
Status output
Logic
unit
+5V
R ST(ON)
Open load
detection
ST
GND
GND disconnect
ESDZD
3
ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 375 Ω
at 1.6 mA. The use of ESD zener diodes as voltage clamp at
DC conditions is not recommended.
2
IN
Vbb
PROFET
Inductive and overvoltage output clamp
4
+ V bb
V
V
Z
VON
bb
V
IN
V
ST
OUT
5
ST
GND
1
V
GND
Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) .
Due to VGND >0, no VST = low signal available.
OUT
GND
PROFET
VON clamped to 47 V typ.
Semiconductor Group
Page 7
1999-Feb-26
BTS436L2
GND disconnect with GND pull up
Inductive Load switch-off energy
dissipation
E bb
3
2
Vbb
IN
E AS
PROFET
4
OUT
5
IN
ST
GND
V
bb
V
=
V
IN ST
OUT
PROFET
1
V
ELoad
Vbb
ST
EL
GND
GND
ZL
{
L
RL
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Vbb disconnect with energized inductive
load
ER
Energy stored in load inductance:
2
EL = 1/2·L·I L
While demagnetizing load inductance, the energy
dissipated in PROFET is
3
high
2
Vbb
IN
PROFET
4
OUT
EAS= Ebb + EL - ER= ∫ VON(CL)·iL(t) dt,
5
with an approximate solution for RL > 0 Ω:
ST
IL· L
IL·RL
EAS= 2·R ·(Vbb + |VOUT(CL)|)· ln (1+ |V
)
L
OUT(CL)|
GND
1
V
Maximum allowable load inductance for
a single switch off
bb
For inductive load currents up to the limits defined by ZL
(max. ratings and diagram on page 8) each switch is
protected against loss of Vbb.
Consider at your PCB layout that in the case of Vbb disconnection with energized inductive load all the load current
flows through the GND connection.
L = f (IL ); Tj,start = 150°C,TC = 150°C const.,
Vbb = 12 V, RL = 0 Ω
ZL [mH]
1000
100
10
1
0.1
0
2
4
6
10
12
14
16
18
IL [A]
Semiconductor Group
Page 8
1999-Feb-26
BTS436L2
Typ. on-state resistance
RON = f (Vbb,Tj ); IL = 2 A, IN = high
RON [mΩ]
80
70
Tj = 150°C
60
50
40
25°C
30
-40°C
20
10
3
5
7
9
30
40
Vbb [V]
Typ. standby current
Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1,2 = low
Ibb(off) [µA]
45
40
35
30
25
20
15
10
5
0
-50
0
50
Semiconductor Group
100
150
200
Tj [°C]
Page 9
1999-Feb-26
BTS436L2
Timing diagrams
Figure 2b: Switching a lamp,
Figure 1a: Vbb turn on:
IN
IN
V bb
ST
V
OUT
V
ST open drain
I
t
OUT
L
t
proper turn on under all conditions
The initial peak current should be limited by the lamp and not by
the initial short circuit current IL(SCp) = 30 A typ. of the device.
Figure 2a: Switching a resistive load,
turn-on/off time and slew rate definition:
Figure 2c: Switching an inductive load
IN
IN
VOUT
ST
90%
t on
dV/dton
dV/dtoff
t
V
off
OUT
10%
IL
I
t
L
I L(OL)
t
*) if the time constant of load is too large, open-load-status may
occur
Semiconductor Group
Page 10
1999-Feb-26
BTS436L2
Figure 3a: Short circuit
shut down by overtemperature, reset by cooling
IN
Figure 5a: Open load: detection in ON-state, open
load occurs in on-state
other channel: normal operation
IN
t
d(ST OL)
I
t
ST
d(ST OL)
L
I
L(lim)
I
t
VOUT
L(SCr)
off(SC)
ST
I
normal
open
normal
L
t
t
Heating up of the chip may require several milliseconds, depending
on external conditions
td(ST OL) = 10 µs typ.
Figure 4a: Overtemperature:
Reset if Tj <Tjt
Figure 5b: Open load: turn on/off to open load
IN
IN
ST
t
d(STOL4)
ST
I
V
L
OUT
t
T
J
t
Semiconductor Group
Page 11
1999-Feb-26
BTS436L2
Package and Ordering Code
Straight: P-TO220-5-12
All dimensions in mm
Standard (=staggered): P-TO220-5-11
Sales code
BTS436L2
Ordering code:
Q67060-S6111-A2
10 ±0.2
Sales code
BTS436L2 S
Ordering code:
Q67060-S6111-A4
10 ±0.2
A
9.8 ±0.15
8.5 1)
3.7-0.15
0.25
M
A C
4.4
SMD: P-TO263-5-2
(tape&reel)
BTS436L2 G
Sales code
Ordering code:
T&R
Q67060-S6111-A3
10 ±0.2
4.4
9.8 ±0.15
1.27 ±0.1
B
0.1
A
0.05
4.7 ±0.5
2.7 ±0.3
2.4
1.3 ±0.3
8 1)
8.5 1)
0...0.15
5x0.8 ±0.1
0.5 ±0.1
4x1.7
8˚ max.
0.25
M
A B
0.1
11±0.5
13 ±0.5
9.25 ±0.2
2.8 ±0.2
1)
1)
0.05
0.5 ±0.1
6x
0.8 ±0.1
1.7
8.4 ±0.4
Typical
All metal surfaces tin plated, except area of cut.
1±0.3
13.4
17±0.3
0.5 ±0.1
3.9 ±0.4
1.7
9.25 ±0.2
15.65 ±0.3
C
2.4
0.8 ±0.1
(15)
1.27 ±0.1
0...0.15
3.7 ±0.3
10.2 ±0.3
8.6 ±0.3
9.25 ±0.2
2.8 ±0.2
1)
13.4
17±0.3
15.65 ±0.3
0.05
0...0.15
1)
B
8.5 1)
3.7 -0.15
4.4
1.27 ±0.1
C
1)
A
9.8 ±0.15
0.25
2.4
M
A B C
Typical
All metal surfaces tin plated, except area of cut.
Published by Siemens AG, Bereich Bauelemente, Vertrieb,
Produkt-Information, Balanstraße 73, D-81541 München
Siemens AG 1999. All Rights Reserved
As far as patents or other rights of third parties are concerned,
liability is only assumed for components per se, not for applications,
processes and circuits implemented within components or assemblies. The information describes a type of component and shall not
be considered as warranted characteristics. The characteristics for
which SIEMENS grants a warranty will only be specified in the
purchase contract. Terms of delivery and rights to change design
reserved. For questions on technology, delivery and prices please
contact the Offices of Semiconductor Group in Germany or the
Siemens Companies and Representatives woldwide (see address
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contact your nearest Siemens Office, Semiconductor Group.
Siemens AG is an approved CECC manufacturer.
Packing: Please use the recycling operators known to you. We can
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Components used in life-support devices or systems must be
13
expressly authorised for such purpose! Critical components ) of
the Semiconductor Group of Siemens AG, may only be used in life
14
supporting devices or systems ) with the express written approval
of the Semiconductor Group of Siemens AG.
Typical
All metal surfaces tin plated, except area of cut.
13)
14)
Semiconductor Group
Page 12
A critical component is a component used in a life-support
device or system whose failure can reasonably be expected to
cause the failure of that life-support device or system, or to
affect its safety or effectiveness of that device or system.
Life support devices or systems are intended (a) to be
implanted in the human body or (b) support and/or maintain
and sustain and/or protect human life. If they fail, it is
reasonably to assume that the health of the user or other
persons may be endangered.
1999-Feb-26