TPP25011 ® Application Specific Discretes A.S.D.™ OVERVOLTAGE and OVERCURRENT PROTECTION for TELECOM LINE FEATURES ■ ■ ■ ■ UNIDIRECTIONAL FUNCTION PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 250 V PROGRAMMABLE CURRENT LIMITATION FROM 40 mA TO 500 mA SURGE CURRENT CAPABILITY IPP = 30A 10/1000 µs SO-8 DESCRIPTION Dedicated to sensitive telecom equipment protection, this device can provide both voltage and current triggered protection with a very tight tolerance. The breakdown voltage can be easily programmed by using an external zener diode. A multiple protection mode can be also performed when using several zener diodes, providing to each line interface an optimized protection level. The current limiting function is achieved with the use of a resistor between the gate and the cathode. The value of the resistor will determine the level of the desired current. SCHEMATIC DIAGRAM COMPLIES WITH THE FOLLOWING STANDARDS : CCITT K17 : VDE 0433 : CNET : FCC part 68 : BELLCORE TR-NWT-000974 : 10/700 5/310 10/700 5/310 0.5/700 0.2/310 2/10 2/10 µs µs µs µs µs µs µs µs 10/1000 µs 10/1000 µs 1.5 38 2k 40 1.5 38 2.5 75 kV A V A (*) kV A kV A (*) 1 kV 30 A (*) (*) with series resistors or PTC. TM: ASD is trademarks of STMicroelectronics. October 2003 - Ed: 5 1/7 TPP25011 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C) Symbol Parameter Value Unit IPP Peak pulse current (see note 1) 10/1000µs 5/310µs 2/10µs 30 40 75 A ITSM Non repetitive surge peak on-state current (F = 50Hz) tp = 10ms t = 1s 5 3.5 A Tstg Tj Storage temperature range Maximum junction temperature - 55 to + 150 150 °C Note 1 : Pulse waveform : 10/1000µs tr=10µs 5/310µs tr=5µs 2/10µs tr=2µs tp=1000µs tp=310µs tp=10µs % I PP 100 50 0 tr t tp THERMAL RESISTANCES Symbol Rth (j-a) 2/7 Parameter Junction to ambient Value Unit 170 °C/W TPP25011 ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol Parameter VRM Stand-off voltage IRM Leakage current at stand-off voltage VBR Breakdown voltage VBO Breakover voltage IH Holding current IBO Breakover current IPP Peak pulse current VGN Gate voltage IG Gate triggering current C Capacitance 1 - OPERATION WITHOUT GATE Type IRM @ VRM max. TPP25011 VBR @ IR min. VBO @ IBO IH C max. min. note1 max. min. note 2 max. note 3 µA V V mA V mA mA mA pF 6 60 250 1 340 15 200 180 100 2 - OPERATION WITH GATE IG VGN @ IGN = 30 mA Type min. max. min. VA-C = 100 V note 4 TPP25011 Note 1: Note 2: Note 3: max. V V mA mA 1.05 1.35 5 40 See the reference test circuit 1. See test circuit 2. VR = 5V, F = 1MHz 3/7 TPP25011 REFERENCE TEST CIRCUIT 1 : tp = 20ms Auto Transformer 220V/2A R1 static relay. 140 R2 240 K 220V Vout IBO measure D.U.T V BO measure Transformer 220V/800V 5A TEST PROCEDURE : ■ ■ Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - VOUT = 250 VRMS, R1 = 140 Ω. - Device with VBO 200 Volt - VOUT = 480 VRMS, R2 = 240 Ω. FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT 2 = GO - NOGO TEST R - VP D.U.T. VBAT = - 48 V Surge generator This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : ■ 4/7 1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 µs. 3) The D.U.T will come back off-state within 50 ms max. TPP25011 APPLICATION CIRCUIT Overvoltage protection and current limitation TPP250 Table below gives the tolerance of the limited current IT for each standardized resistor value. CURRENT TOLERANCE R Ω ( ± 5%) IT mA min IT mA max 3.00 3.30 3.60 3.90 4.30 4.70 5.10 5.60 6.20 6.80 7.50 8.20 9.10 10.10 11.00 12.00 13.00 15.00 16.00 18.00 20.00 22.00 24.00 27.00 30.00 338 308 283 261 238 218 201 184 166 152 138 127 115 104 96 88 82 72 68 61 55 50 47 42 38 514 471 435 404 370 342 319 294 269 249 229 213 196 181 169 158 149 135 129 119 111 105 99 93 87 - + Line LOAD 5/7 TPP25011 Telephone set protection PROTECTION MODES : OFF HOOK = Ringer circuit protection is insured with intrinsic breakdown voltage at 250 V ON HOOK = In dialing mode and in conversation mode, the breakdown voltage of TPP250 can be adapted at different levels with zener diodes. ORDER CODE TPP Telecom Programmable Protection Breakdown voltage 6/7 250 1 1 RL Packaging: RL = Tape & reel = Tube Package: 1 = SO-8 Plastic Version TPP25011 MARKING Package Type Marking SO-8 TPP25011 TPP250 PACKAGE MECHANICAL DATA SO-8 Plastic DIMENSIONS REF. Millimetres Min. Typ. Max. A a1 Inches 0.1 a2 Min. Typ. Max. 1.75 0.069 0.25 0.004 0.010 1.65 0.065 b 0.35 0.48 0.014 0.019 b1 0.19 0.25 0.007 0.010 C 0.50 c1 0.020 45° (typ) D 4.8 5.0 0.189 0.197 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.15 0.157 L 0.4 1.27 0.016 0.050 0.6 0.024 M S 8° (max) Packaging : Products supplied antistatic tubes or tape and reel. Weight :0.08g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain Sweden - Switzerland - United Kingdom - United States www.st.com 7/7