Small Signal Transistor Arrays UNA0235 Silicon PNP epitaxial planar transistor (3 elements) Silicon NPN epitaxial planar transistor (3 elements) Unit: mm For motor drives For small motor drive circuits in general 0.2+0.1 –0.0 (0.5) 0.4±0.1 6 5 4 3 2 1 7 12˚ • Small and lightweight • Low power consumption • Low-voltage drive • With 6 elements incorporated Parameter NPN Overall 0.5±0.2 8 9 10 11 12 13 14 0.9±0.1 (0.8) 1.5±0.1 1.5+0.2 –0.1 6.5±0.3 ■ Absolute Maximum Ratings Ta = 25°C PNP 45˚ 5.5±0.3 7.7±0.3 ■ Features 12˚ Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −12 V Collector-emitter voltage (Base open) VCEO −10 V Emitter-base voltage (Collector open) VEBO −7 V Collector current IC −3 A Peak collector current ICP −4 A Collector-base voltage (Emitter open) VCBO 12 V Collector-emitter voltage (Base open) VCEO 10 V Emitter-base voltage (Collector open) VEBO 7 V Collector current IC 3 A Peak collector current ICP 4 A Total power dissipation * PT 0.5 W 1: Collector 2: Base 3: Collector 4: Base 5: Collector 6: Base 7: Emitter 8: Collector 9: Base 13: Base 10: Collector 14: Emitter 11: Base 12: Collector SO14-G1 Package Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Marking Symbol: UN235 Internal Connection 7 6 5 4 3 2 1 8 9 10 11 12 13 14 Note) *: When the dissipation on one device is TC = 25°C Publication date: December 2002 SJK00054AED 1 UNA0235 ■ Electrical Characteristics Ta = 25°C ± 3°C • PNP Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −12 Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0 −10 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −7 V Collector-base cutoff current (Emitter open) ICBO VCB = −10 V, IE = 0 Forward current transfer ratio *1 hFE VCE = −1 V, IC = − 0.5 A VCE(sat) IC = −2 A, IB = −50 mA Collector-emitter saturation voltage *1 Transition frequency fT Conditions Min Typ Max Unit V 200 −1 µA 800 − 0.45 V VCB = −6 V, IE = 50 mA, f = 200 MHz 150 MHz 65 pF Collector output capacitance (Common base, input open circuited) Cob VCB = −10 V, IE = 0, f = 1 MHz Forward voltage *2 VF IF = −1 A −1.5 V Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Application to the internal diode • NPN Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 12 Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 10 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 V Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 Forward current transfer ratio *1 hFE VCE = 1 V, IC = 0.5 A VCE(sat) IC = 2 A, IB = 50 mA Collector-emitter saturation voltage *1 Conditions Min Typ Max Unit V 200 1 µA 800 0.25 V VCB = 6 V, IE = −50 mA, f = 200 MHz 150 MHz Collector output capacitance (Common base, input open circuited) Cob VCB = 10 V, IE = 0, f = 1 MHz 50 pF Forward voltage *2 VF IF = 1 A Transition frequency fT 1.5 V Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Application to the internal diode Common characteristics chart PT Ta Total power dissipation PT (W) 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 2 SJK00054AED UNA0235 Characteristics charts of PNP transistor block Ta = 25°C −9 mA −8 mA −2.0 −1.0 −7 mA −6 mA −5 mA −4 mA −1.5 −3 mA −2 mA −1.0 −1 mA − 0.5 0 Ta = 80°C − 0.8 − 0.6 −25°C 25°C − 0.4 −2 0 −4 −6 −8 −10 0 −12 0 − 0.2 − 0.4 − 0.6 − 0.8 −1.0 −1.2 −1.4 Base-emitter voltage VBE (V) hFE IC Ta = 80°C 600 25°C 400 −25°C 200 − 0.1 −1 Collector current IC (A) −10 Collector output capacitance C (pF) (Common base, input open circuited) ob VCE = −1 V − 0.01 IC / IB = 40 −1 Ta = 80°C 25°C −25°C − 0.01 − 0.001 − 0.01 − 0.1 −1 −10 Collector current IC (A) Cob VCB 1 000 800 0 − 0.001 −10 − 0.1 − 0.2 Collector-emitter voltage VCE (V) Forward current transfer ratio hFE VCE(sat) IC VCE = −1 V Collector current IC (A) −2.5 IB = −10 mA Collector current IC (A) IC VBE −1.2 Collector-emitter saturation voltage VCE(sat) (V) IC VCE −3.0 f = 1 MHz Ta = 25°C 100 10 0 −2 −4 −6 −8 −10 −12 −14 −16 Collector-base voltage VCB (V) SJK00054AED 3 UNA0235 Characteristics charts of NPN transistor block IC VBE 1.2 Ta = 25°C 6 mA 5 mA 2.0 4 mA 1.5 3 mA 2 mA 1.0 1.0 Collector current IC (A) Collector current IC (A) 9 mA 8 mA 7 mA 2.5 0 2 4 6 8 10 Ta = 80°C 0.8 0.4 0.2 0 12 0 Collector-emitter voltage VCE (V) 0.2 0.4 25°C −25°C 200 0.01 0.1 1 Collector current IC (A) 10 Collector output capacitance C (pF) (Common base, input open circuited) ob 600 400 1.0 1.2 1.4 f = 1 MHz Ta = 25°C 100 10 0 2 4 6 8 10 12 14 Collector-base voltage VCB (V) SJK00054AED 10 1 Ta = 80°C 0.1 −25°C 0.01 0.001 0.001 25°C 0.01 0.1 1 Collector current IC (A) Cob VCB VCE = 1 V Forward current transfer ratio hFE 0.8 1 000 Ta = 80°C 4 0.6 Base-emitter voltage VBE (V) hFE IC 800 0 0.001 −25°C 25°C 0.6 1 mA 0.5 0 VCE = 1 V IB = 10 mA 3.0 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE 3.5 16 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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