ETC BZX84C2V4LT1/D

BZX84C2V4LT1 Series
Zener Voltage Regulators
225 mW SOT–23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT–23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
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Specification Features:
3
Cathode
225 mW Rating on FR–4 or FR–5 Board
Zener Breakdown Voltage Range – 2.4 V to 75 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 KV) per Human Body Model
3
1
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
2
SOT–23
CASE 318
STYLE 8
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL94 V–0
MARKING DIAGRAM
MAXIMUM RATINGS
Rating
Total Power Dissipation on FR–5 Board,
(Note 1.) @ TA = 25°C
Derated above 25°C
Thermal Resistance – Junction to Ambient
Total Power Dissipation on Alumina
Substrate, (Note 2.) @ TA = 25°C
Derated above 25°C
Thermal Resistance – Junction to Ambient
Junction and Storage
Temperature Range
1
Anode
xxx
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
300
2.4
mW
mW/°C
RJA
417
°C/W
TJ, Tstg
–65 to
+150
°C
M
•
•
•
•
•
PD
RJA
xxx = Specific Device Code
M = Date Code
PD
ORDERING INFORMATION
Device Package
Shipping
BZX84CxxxLT1
SOT–23
3000/Tape & Reel
BZX84CxxxLT3
SOT–23
10,000/Tape & Reel
1. FR–5 = 1.0 X 0.75 X 0.62 in.
2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
Devices listed in bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.
†The “T1” suffix refers to an 8 mm, 7 inch reel.
The “T3” suffix refers to an 8 mm, 13 inch reel.
 Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 1
1
Publication Order Number:
BZX84C2V4LT1/D
BZX84C2V4LT1 Series
ELECTRICAL CHARACTERISTICS
I
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C
unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)
Parameter
Symbol
VZ
Reverse Zener Voltage @ IZT
IZT
Reverse Current
ZZT
Maximum Zener Impedance @ IZT
IR
Reverse Leakage Current @ VR
VR
Reverse Voltage
IF
Forward Current
VF
Forward Voltage @ IF
VZ
C
IF
VZ VR
IR VF
IZT
Maximum Temperature Coefficient of VZ
Zener Voltage Regulator
Max. Capacitance @ VR = 0 and f = 1 MHz
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2
V
BZX84C2V4LT1 Series
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
VZ1 (Volts)
@ IZT1 = 5 mA
(Note 3.)
VZ2 (Volts)
@ IZT2 = 1 mA
(Note 3.)
VZ3 (Volts)
@ IZT3 = 20 mA
(Note 3.)
Device
Device
Marking
Min
Nom
Max
ZZT1
(Ohms)
@ IZT1 =
5 mA
Min
Max
ZZT2
(Ohms)
@ IZT2 =
1 mA
(Note 4.)
Min
Max
ZZT3
(Ohms)
@ IZT3 =
20 mA
BZX84C2V4LT1
BZX84C2V7LT1
BZX84C3V0LT1
BZX84C3V3LT1
BZX84C3V6LT1
Z11
Z12
Z13
Z14
Z15
2.2
2.5
2.8
3.1
3.4
2.4
2.7
3
3.3
3.6
2.6
2.9
3.2
3.5
3.8
100
100
95
95
90
1.7
1.9
2.1
2.3
2.7
2.1
2.4
2.7
2.9
3.3
600
600
600
600
600
2.6
3
3.3
3.6
3.9
3.2
3.6
3.9
4.2
4.5
50
50
50
40
40
BZX84C3V9LT1
BZX84C4V3LT1
BZX84C4V7LT1
BZX84C5V1LT1
BZX84C5V6LT1
Z16
W9
Z1
Z2
Z3
3.7
4
4.4
4.8
5.2
3.9
4.3
4.7
5.1
5.6
4.1
4.6
5
5.4
6
90
90
80
60
40
2.9
3.3
3.7
4.2
4.8
3.5
4
4.7
5.3
6
600
600
500
480
400
4.1
4.4
4.5
5
5.2
4.7
5.1
5.4
5.9
6.3
BZX84C6V2LT1
BZX84C6V8LT1
BZX84C7V5LT1
BZX84C8V2LT1
BZX84C9V1LT1
Z4
Z5
Z6
Z7
Z8
5.8
6.4
7
7.7
8.5
6.2
6.8
7.5
8.2
9.1
6.6
7.2
7.9
8.7
9.6
10
15
15
15
15
5.6
6.3
6.9
7.6
8.4
6.6
7.2
7.9
8.7
9.6
150
80
80
80
100
5.8
6.4
7
7.7
8.5
BZX84C10LT1
BZX84C11LT1
BZX84C12LT1
BZX84C13LT1
BZX84C15LT1
Z9
Y1
Y2
Y3
Y4
9.4
10.4
11.4
12.4
14.3
10
11
12
13
15
10.6
11.6
12.7
14.1
15.8
20
20
25
30
30
9.3
10.2
11.2
12.3
13.7
10.6
11.6
12.7
14
15.5
150
150
150
170
200
BZX84C16LT1
BZX84C18LT1
BZX84C20LT1
BZX84C22LT1
BZX84C24LT1
Y5
Y6
Y7
Y8
Y9
15.3
16.8
18.8
20.8
22.8
16
18
20
22
24
17.1
19.1
21.2
23.3
25.6
40
45
55
55
70
15.2
16.7
18.7
20.7
22.7
17
19
21.1
23.2
25.5
200
225
225
250
250
Min
Max
ZZT2
Below
@ IZT4 =
0.5 mA
(Note 4.)
80
80
80
90
130
25
27.8
30.8
33.8
36.7
28.9
32
35
38
41
46
50
54
60
66
150
170
180
200
215
39.7
43.7
47.6
51.5
57.4
72
79
240
255
63.4
69.4
VZ1 Below
@ IZT1 = 2 mA
Device
Marking
Min
Nom
Max
ZZT1
Below
@ IZT1 =
2 mA
BZX84C27LT1
BZX84C30LT1
BZX84C33LT1
BZX84C36LT1
BZX84C39LT1
Y10
Y11
Y12
Y13
Y14
25.1
28
31
34
37
27
30
33
36
39
28.9
32
35
38
41
BZX84C43LT1
BZX84C47LT1
BZX84C51LT1
BZX84C56LT1
BZX84C62LT1
Y15
Y16
Y17
Y18
Y19
40
44
48
52
58
43
47
51
56
62
BZX84C68LT1
BZX84C75LT1
Y20
Y21
64
70
68
75
Device
VZ2 Below
@ IZT2 = 0.1 mA
Max Reverse
Leakage
Current
VZ
(mV/k)
@ IZT1 = 5 mA
VR
Volts
Min
Max
C (pF)
@ VR = 0
f = 1 MHz
50
20
10
5
5
1
1
1
1
1
–3.5
–3.5
–3.5
–3.5
–3.5
0
0
0
0
0
450
450
450
450
450
30
30
15
15
10
3
3
3
2
1
1
1
2
2
2
–3.5
–3.5
–3.5
–2.7
–2.0
–2.5
0
0.2
1.2
2.5
450
450
260
225
200
6.8
7.4
8
8.8
9.7
6
6
6
6
8
3
2
1
0.7
0.5
4
4
5
5
6
0.4
1.2
2.5
3.2
3.8
3.7
4.5
5.3
6.2
7.0
185
155
140
135
130
9.4
10.4
11.4
12.5
13.9
10.7
11.8
12.9
14.2
15.7
10
10
10
15
20
0.2
0.1
0.1
0.1
0.05
7
8
8
8
10.5
4.5
5.4
6.0
7.0
9.2
8.0
9.0
10.0
11.0
13.0
130
130
130
120
110
15.4
16.9
18.9
20.9
22.9
17.2
19.2
21.4
23.4
25.7
20
20
20
25
25
0.05
0.05
0.05
0.05
0.05
11.2
12.6
14
15.4
16.8
10.4
12.4
14.4
16.4
18.4
14.0
16.0
18.0
20.0
22.0
105
100
85
85
80
VZ3 Below
@ IZT3 = 10 mA
Min
Max
ZZT3
Below
@ IZT3 =
10 mA
300
300
325
350
350
25.2
28.1
31.1
34.1
37.1
29.3
32.4
35.4
38.4
41.5
45
50
55
60
70
46
50
54
60
66
375
375
400
425
450
40.1
44.1
48.1
52.1
58.2
46.5
50.5
54.6
60.8
67
72
79
475
500
64.2
70.3
73.2
80.2
IR
A
@
Max Reverse
Leakage
Current
VZ
(mV/k) Below
@ IZT1 = 2 mA
VR
Volts
Min
Max
C (pF)
@ VR = 0
f = 1 MHz
0.05
0.05
0.05
0.05
0.05
18.9
21
23.1
25.2
27.3
21.4
24.4
27.4
30.4
33.4
25.3
29.4
33.4
37.4
41.2
70
70
70
70
45
80
90
100
110
120
0.05
0.05
0.05
0.05
0.05
30.1
32.9
35.7
39.2
43.4
37.6
42.0
46.6
52.2
58.8
46.6
51.8
57.2
63.8
71.6
40
40
40
40
35
130
140
0.05
0.05
47.6
52.5
65.6
73.4
79.8
88.6
35
35
IR
A
@
3. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C
4. The Zener impedance, ZZT2, for the 27 through 75 volt types is tested at 0.5 mA rather than the test current of 0.1 mA used for VZ2
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3
BZX84C2V4LT1 Series
8
100
7
θ VZ, TEMPERATURE COEFFICIENT (mV/°C)
θ VZ, TEMPERATURE COEFFICIENT (mV/°C)
TYPICAL CHARACTERISTICS
TYPICAL TC VALUES
6
5
4
VZ @ IZT
3
2
1
0
-1
-2
-3
2
3
4
5
6
7
8
9
10
VZ, NOMINAL ZENER VOLTAGE (V)
11
12
TYPICAL TC VALUES
VZ @ IZT
10
1
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 1. Temperature Coefficients
(Temperature Range –55°C to +150°C)
Figure 2. Temperature Coefficients
(Temperature Range –55°C to +150°C)
1000
IZ = 1 mA
100
TJ = 25°C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IF, FORWARD CURRENT (mA)
Z ZT, DYNAMIC IMPEDANCE (Ω )
1000
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
100
5 mA
20 mA
10
10
150°C
1
1
10
VZ, NOMINAL ZENER VOLTAGE
100
1
0.4
Figure 3. Effect of Zener Voltage on
Zener Impedance
0.5
75°C 25°C
0.6
0°C
0.7
0.8
0.9
1.0
VF, FORWARD VOLTAGE (V)
Figure 4. Typical Forward Voltage
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4
1.1
1.2
BZX84C2V4LT1 Series
TYPICAL CHARACTERISTICS
1000
1000
C, CAPACITANCE (pF)
0 V BIAS
1 V BIAS
I R , LEAKAGE CURRENT (µA)
TA = 25°C
100
BIAS AT
50% OF VZ NOM
10
1
1
10
VZ, NOMINAL ZENER VOLTAGE (V)
100
100
10
1
+150°C
0.1
0.01
0.001
+25°C
0.0001
-55°C
0.00001
0
10
Figure 5. Typical Capacitance
100
TA = 25°C
10
1
0.1
0.01
0
2
4
6
8
VZ, ZENER VOLTAGE (V)
30
40
50
60
70
VZ, NOMINAL ZENER VOLTAGE (V)
80
Figure 6. Typical Leakage Current
I Z , ZENER CURRENT (mA)
I Z , ZENER CURRENT (mA)
100
20
10
10
1
0.1
0.01
12
TA = 25°C
10
30
50
70
VZ, ZENER VOLTAGE (V)
90
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
Figure 7. Zener Voltage versus Zener Current
(VZ Up to 12 V)
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5
90
BZX84C2V4LT1 Series
PACKAGE DIMENSIONS
SOT–23
TO–236AB
CASE 318–08
ISSUE AF
A
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
3
1
V
B S
2
G
C
D
H
J
K
DIM
A
B
C
D
G
H
J
K
L
S
V
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
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6
BZX84C2V4LT1 Series
Notes
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7
BZX84C2V4LT1 Series
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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BZX84C2V4LT1/D