ETC UNR2226(UN2226)

Transistors with built-in Resistor
UNR2226 (UN2226)
Silicon NPN epitaxial planer type
Unit: mm
0.40+0.10
–0.05
For muting circuit
0.16+0.10
–0.06
1.9±0.1
■ Absolute Maximum Ratings Ta = 25°C
2.90+0.20
–0.05
Unit
VCBO
30
V
Collector to emitter voltage
VCEO
20
V
Emitter to base voltage
VEBO
5
V
Collector current
IC
600
mA
Total power dissipation
PT
200
mW
Collector to base voltage
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
10°
1.1+0.2
–0.1
Rating
1.1+0.3
–0.1
Symbol
0 to 0.1
Parameter
0.4±0.2
2
1
(0.95) (0.95)
(0.65)
• Low collector to emitter saturation voltage VCE(sat)
• Built-in resistor, allowing reduction of the number of parts.
5°
■ Features
2.8+0.2
–0.3
1.50+0.25
–0.05
3
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Type Package
Marking Symbol: FY
Internal Connection
R1
(4.7 kΩ)
B
C
E
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
VCBO
IC = 1 µA, IE = 0
30
Collector to emitter voltage
VCEO
IC = 1 mA, IB = 0
20
V
Emitter to base voltage
VEBO
IE = 1 µA, IC = 0
5
V
Collector cutoff current
ICBO
VCB = 30 V, IE = 0
1
µA
Emitter cutoff current
IEBO
VEB = 5 V, IC = 0
1
µA
hFE
VCE = 5 V, IC = 50 mA
Collector to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
R1
ON-resistance *
RON
Transition frequency
100
600
IC = 50 mA, IB = 2.5 mA
VCE(sat)
Input resistance
V
−30%
fT
4.7
80
mV
+30%
kΩ
VI = 7 V, RL = 1 kΩ, f = 1 kHz
0.95
Ω
VCB = 10 V, IE = −50 mA, f = 200 MHz
200
MHz
Note) *: RON measurement circuit
RL
R1
VI
f = 1 kHz
V = 0.3 V
V B VV
VA
RON =
VB
× RL (Ω)
VA−VB
Note) The part number in the parenthesis shows conventional part number.
1
UNR2226
Transistors with built-in Resistor
IC  VCE
Ta = 25°C
IB = 1.0 mA
0.9 mA
200
Collector current IC (A)
Total power dissipation PT (mW)
VCE(sat)  IC
400
150
100
300
0.8 mA
0.7 mA
0.6 mA
200
0.5 mA
0.4 mA
0.3 mA
100
50
0.2 mA
0.1 mA
0
0
20
40
60
0
80 100 120 140 160
Ambient temperature Ta (°C)
0
2.5
5
hFE  IC
Ta = 75°C
300
25°C
−25°C
200
100
1
10
Collector current IC (A)
VO = 0.2 V
Ta = 25°C
Input voltage VIN (V)
30
10
3
1
300m
10µ
100µ
1m
10m
Output current IO (A)
2
Ta = 75°C
30
25°C
−25°C
10
3
1
1
3
10
100m
30
100
300
1 000
100m
VO = 5 V
Ta = 25°C
10m
10
1m
100µ
5
10µ
1
1
3
10
30
100
Collector to base voltage VCB (V)
VIN  IO
100m
1µ
100
Collector current IC (mA)
Output current IO (A)
Collector output capacitance Cob (pF)
Forward current transfer ratio hFE
400
100
300
IO  VIN
f = 1 MHz
VCE = 10 V
100m
IC / IB = 10
Cob  VCB
14
10m
10
1 000
Collector to emitter voltage VCE (V)
500
0
1m
7.5
Collector to emitter saturation voltage VCE(sat) (mV)
P T  Ta
250
1µ
250m 500m
750m
1
1.25
Input voltage VIN (V)
1.5
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2001 MAR