Ordering number : ENN7025 CPH5706 TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode CPH5706 DC / DC Converter Applications unit : mm 2156 5 4 0.15 3 0.2 [CPH5706] 2.9 0.05 0.6 • Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating high-density mounting. The CPH5706 consists of two chips which are equivalent to the CPH3115 and the SBS006, respectively. Ultraminiature package facilitates miniaturization in end products.(0.9mm) 0.6 • Package Dimensions 2.8 • 1.6 Features 1 2 0.4 Specifications 0.9 0.7 0.2 0.95 1 : Cathode 2 : Collector 3 : Base 4 : Emitter 5 : Anode SANYO : CPH5 0.4 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [TR] Collector-to-Base Voltage VCBO --30 V Collector-to-Emitter Voltage VCEO --30 V Emitter-to-Base Voltage VEBO --5 V Collector Current IC Collector Current (Pulse) Base Current ICP IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg --1.5 A --3 A --300 Mounted on a ceramic board (600mm2✕0.8mm) mA 0.9 W 150 °C --55 to +125 °C VRRM VRSM 30 V 30 V IO 0.7 A 10 A --55 to +125 °C --55 to +125 °C [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Recified Current Surge Current Junction Temperature IFSM Tj Storage Temperature Tstg 50Hz sine wave, 1cycle Marking : PF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 92001 TS IM TA-3288 GI IM No.7025-1/5 CPH5706 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ max Unit [TR] Collector Cutoff Current ICBO Emitter Cutoff Current IEBO hFE DC Current Gain Gain-Bandwidth Product fT Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage VBE(sat) V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time ton tstg Storage Time Fall Time tf VCB=--30V, IE=0 VEB=--4V, IC=0 VCE=--2V, IC=--100mA 200 VCE=--10V, IC=--300mA --0.1 µA --0.1 µA 560 450 VCB=--10V, f=1MHz MHz 9 IC=--750mA, IB=--15mA IC=--750mA, IB=--15mA IC=--10µA, IE=0 IC=--1mA, RBE=∞ IE=--10µA, IC=0 See specified Test Circuit pF --250 --375 mV --0.85 --1.2 V --30 V --30 V --5 V 30 ns See specified Test Circuit 115 ns See specified Test Circuit 30 ns [SBD] Reverse Voltage Forward Voltage VR VF 1 IR=0.5mA IF=0.3A VF 2 IF=0.5A IF=0.7A VF 3 Reverse Current 30 V 0.35 Interterminal Capacitance IR C VR=10V, f=1MHz Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit 0.40 V 0.42 0.47 V 0.5 0.55 V 200 µA VR=10V 20 pF 10 ns Electrical Connection A E B C C (Top view) Switching Time Test Circuit trr Test Circuit [TR] [SBD] Duty≤10% IB2 IB1 10mA OUTPUT INPUT 50Ω VR 100Ω RL + + 220µF 470µF 10Ω 100mA 10µs RB 50Ω 100mA PW=20µs D.C.≤1% trr --5V VBE=5V VCC= --12V --20IB1= 20IB2= IC= --750mA No.7025-2/5 CPH5706 [TR] Collector Current, IC -- A --1.6 --1.4 --20mA --1.2 --8mA --1.0 --10mA --6mA --4mA --0.8 --0.6 --2mA --0.4 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 --0.2 IB=0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 hFE -- IC 1000 0 --1.0 3 25°C --25°C 100 7 5 3 2 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A --0.1 7 75°C 5 ° Ta= --25 C C 25° 2 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A [TR] 2 3 5 7 --0.1 2 3 5 7 --1.0 5 3 2 10 7 5 3 5 7 1.0 2 3 5 7 10 Collector-to-Base Voltage, VCB -- V 2 3 5 IT03029 2 3 IT03026 VBE(sat) -- IC [TR] IC / IB=50 5 3 2 --1.0 Ta= --25°C 7 75°C 5 25°C 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 f T -- IC 3 Gain-Brandwidth Product, f T -- MHz Output Capacitance, Cob -- pF °C 25 °C --25 2 Collector Current, IC -- A f=1MHz 3 5°C 7 Ta= 3 IT03027 Cob -- VCB 2 5 --0.1 --0.01 3 7 2 0.1 7 Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 100 --0.1 7 3 3 2 --10 5 2 [TR] 3 [TR] 7 --1.2 IT03024 5 --0.01 --0.01 IC / IB=50 --0.01 --0.01 --1.0 7 3 --1.0 3 --0.8 IC / IB=20 IT03025 VCE(sat) -- IC 2 --0.6 VCE(sat) -- IC [TR] Ta=75°C 2 --0.4 Base-to-Emitter Voltage, VBE -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 --0.2 IT03023 VCE= --2V 7 DC Current Gain, hFE 0 --0.9 --1.0 Collector-to-Emitter Voltage, VCE -- V [TR] VCE= --2V Collector Current, IC -- A --50mA --40mA --30mA --1.8 IC -- VBE --1.6 Ta=7 5°C 25°C --25°C IC -- VCE --2.0 2 3 IT03028 [TR] VCE= --10V 2 1000 7 5 3 2 100 7 5 3 2 --0.01 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A 7 --1.0 2 IT03030 No.7025-3/5 CPH5706 ASO --10 7 5 1m s ms 10 --1.0 7 5 10 DC 0m op s er 3 2 Collector Dissipation, PC -- W 2 ati on --0.1 7 5 Ta=25°C Single pulse Mounted on a ceramic board(600mm2✕0.8mm) 3 2 --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 5 C 50° 5 3 75°C 2 0.01 Average Forward Power Dissipation, PF(AV) -- W 0 0.7 0.6 0.5 0.2 0.4 0.6 Forward Voltage, VF -- V IT03033 PF(AV) -- IO [SBD] (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° (1) (2) (4) ce ram 0.6 ic bo ard (60 0.4 0m m2 ✕0 .8m m) 0 Reverse Current, IR -- mA °C 25 5°C 12 7 na 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT03032 IR -- VR [SBD] 100 7 5 3 2 C Ta = Forward Current, IF -- A 0° do [SBD] 5 10 nte IT03031 7 2 ou 0.8 7--100 1.0 3 M 0.9 0 3 IF -- VF 2 1.0 0.2 Collector-to-Emitter Voltage, VCE -- V 0.1 [TR] 1.2 IC= --1.5A s 0µ 10 s 0µ 50 Collector Current, IC -- A 1.4 ICP= --3A 3 PC -- Ta [TR] 25°C 10 7 5 3 2 1 Ta= 100°C 1.0 7 5 3 2 75°C 50°C 0.1 7 5 3 2 0.01 25°C 0 5 10 15 20 Reverse Voltage, VR -- V 25 30 IT03034 (3) 0.4 0.3 Rectangular wave 0.2 θ 360° Sine wave 0.1 0 0 0.1 0.2 0.3 0.4 0.5 180° 360° 0.6 0.7 Average Rectified Current, IO -- A 0.8 0.9 IT03035 No.7025-4/5 CPH5706 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2001. Specifications and information herein are subject to change without notice. PS No.7025-5/5