CV111-2 The Communications Edge TM UMTS-band High Linearity Downconverter 25 GND 2 GND MIXIF 26 IF IN GND 27 GND RF IN 28 24 23 22 IF RF OUT 1 21 IF OUT IF Amp 20 GND RF Amp N/C 3 19 N/C GND 4 18 GND LO Driver Amp N/C 5 GND 6 15 LO IN 9 10 11 12 13 14 LO OUT GND LO 8 GND Typical applications include frequency down conversion, modulation and demodulation for receivers used in CDMA, CDMA2000, W-CDMA / IMT2000, GPRS and EDGE mobile infrastructure technologies for UMTS frequency bands. 17 BIAS 16 GND RF MIXRF 7 MIXLO Functionality includes RF amplification, frequency conversion and IF amplification, while an integrated LO driver amplifier powers the passive mixer. The MCM is implemented with reliable and mature GaAs MESFET and InGaP HBT technology. N/C RF: 1900 – 2200 MHz IF: 150 – 300 MHz +38 dBm Output IP3 +21 dBm Output P1dB 5 dB Noise Figure Single supply operation (+5 V) 6x6 mm 28-pin QFN package Low-side LO configuration Common footprint with other PCS/UMTS/cellular versions The CV111-2 is a high linearity downconverter designed to meet the demanding issues for performance, functionality, and cost goals of current and next generation mobile infrastructure basestations. It provides high dynamic range performance in a low profile surface-mount leadless package that measures 6 x 6 mm square. GND • • • • • • • • • Functional Diagram GND • High dynamic range downconverter with integrated LO, IF, & RF amps Product Description GND Product Features Product Information Specifications1 Parameters RF Frequency Range LO Frequency Range IF Center Frequency Range % Bandwidth around IF center frequency SSB Conversion Gain Gain Drift over Temp (-40° C to 85° C) Output IP3 Output IP2 Output 1dB Compression Point Noise Figure LO Input Drive Level LO-RF Isolation LO-IF Isolation Return Loss: RF Port Return Loss: LO Port Return Loss: IF Port Operating Supply Voltage Supply Current FIT Rating Junction Temperature Units Minimum MHz MHz MHz % dB dB dBm dBm dBm dB dBm dB dB dB dB dB V mA failures /1E9 hrs °C 1900 1600 150 Typical 240 ±7.5 21 ±1.0 +38 +48 +21 5.0 0 45 35 14 14 14 +5 360 -2.5 +4.9 290 Maximum Comments 2200 2050 300 See note 2 See note 2 Temp = 25° C Referenced to +25° C See note 3 See note 3 See note 4 +2.5 PLO = 0 dBm PLO = 0 dBm +5.1 480 72.1 160 @ 70o C ambient, 90% confidence See note 5 1. Specifications when using the application specific circuit (shown on page 3) with a low side LO = 0 dBm in a downconverting application over the operating case temperature range. 2. The IF bandwidth of the converter is defined as 15% around any center frequency in its operating IF frequency range. The bandwidth is determined with external components. Specifications are valid around the total ±7.5% bandwidth. ie. with a center frequency of 200 MHz, the specifications are valid from 200 ± 15 MHz. 3. Assumes the supply voltage = +5 V. OIP3 is measured with ∆f = 1 MHz with IFout = 5 dBm / tone. 4. Assumes LO injection noise is filtered at the thermal noise floor, -174 dBm/Hz, at the RF, IF, and Image frequencies. 5. The maximum junction temperature ensures a minimum MTBF rating of 1 million hours of usage. Absolute Maximum Rating Ordering Information Parameters Rating Part No. Description Operating Case Temperature Storage Temperature DC Voltage Junction Temperature RF Input (continuous) -40° to +85° C -55° to +125° C +6 V +220 °C +2 dBm CV111-2 UMTS-band High Linearity Downconverter Fully-Assembled Application Board, RF = 1920 – 1980 MHz, IF = 240 MHz Fully-Assembled Application Board, RF = 2110 – 2170 MHz, IF = 240 MHz CV111-2PCB240RX CV111-2PCB240TX Operation of this device above any of these parameters may cause permanent damage. This document contains information on a new product. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com July 2003 CV111-2 The Communications Edge TM UMTS-band High Linearity Downconverter Product Information MIXIF 26 25 24 23 22 IF RF OUT 1 GND 2 GND GND 27 IF IN RF IN 28 GND GND Device Architecture / Application Circuit Information IF Amp 20 GND RF Amp N/C 3 19 N/C GND 4 18 GND LO Driver Amp N/C 5 17 BIAS 16 GND RF MIXRF 7 15 LO IN 9 10 11 12 13 GND N/C GND MIXLO GND LO OUT LO 8 14 Gain (dB) Stage RF Amplifier RF Filter LO Amp / MMIC Mixer IF Amplifier CV111-1 13 -2 -9 19 Output P1dB (dBm) Output IP3 (dBm) NF (dB) 21 41 3.2 ----2.0 9 23 9.8 23 41 2.1 Cumulative Performance Current (mA) 140 --80 140 360 Cumulative Performance Output Output Gain NF P1dB IP3 (dB) (dB) (dBm) (dBm) 13 21.0 41.0 3.2 11 19.0 39.0 3.3 2 6.5 22.2 4.5 21 21.0 38.1 5.0 21 21.0 38.1 5.0 GND GND 6 Typical Downconverter Performance Chain Analysis 21 IF OUT RF Amp Matching IF Amp Matching IF Amp Bias RF Amp Bias RF Bandpass Filter / Attenuator Pad Optional IF Lowpass Filter Printed Circuit Board Material: .014” FR-4, 4 layers, .062” total thickness LO Amp Bias LO Amp Bias RF / IF Diplexer (used for cellular versions only) LO Lowpass Filter (not used in this product) CV111-2: The application circuit can be broken up into four main functions as denoted in the colored dotted areas above: RF/IF diplexing (purple; this is only used with the cellular-band CV products), amplifier matching (green), filtering (red), and dc biasing (blue). There are various placeholders for chip components in the circuit schematic so that a common PCB can be used for all WJ single-branch converters. Additional placeholders for other optional functions such as filtering are also included. RF / IF Amplifier Matching: The RF amplifier requires a matching element (C12) for optimal gain and input return loss performance. The IF amplifier requires matching elements to optimize the performance of the amplifier to the desired IF center frequency. Since IF bandwidths are typically on the order of 5 to 10%, a simple two element matching network, in the form of either a high-pass or low-pass filter structure, is sufficient to match the MMIC IF amplifier over these narrow bandwidths. Proper component values for other IF center frequencies can be provided by emailing to [email protected]. RF Bandpass Filtering: Bandpass filtering is recommended to achieve the best noise figure performance with the downconverter. The bandpass filter, implemented with a SAW filter on the application circuit, allows for the suppression of noise from the image frequency. It is permissible to not use a filter and use a 2 dB pad with R6, R7, and R16 instead with slightly degraded noise figure performance. External Diplexer: This is only used with the cellular-band CV products. The mixer performs the diplexing internally for the CV111-2; therefore the components shown in the diplexer section should be loaded as follows: C2 = C14 = 0 Ω. IF and LO Lowpass Filtering (optional): Filtering of unwanted RF and LO signals are typically performed in the IF chain. This filtering function may be realized using lumped elements; placeholders (L9, C21, C22) are provided in the application circuit to allow for lumped-element filtering to be implemented if desired. The LO lowpass filter is used only in the cellular-band CV products; it should not be used for this product. L1 should be loaded with a 0 Ω jumper. DC biasing: DC bias must be provided for the RF, LO and IF amplifiers in the converter. R1 sets the operating current for the last stage of the LO amplifier and is chosen to optimize the mixer LO drive level. Proper RF chokes and bypass capacitors are chosen for proper amplifier biasing at the intended frequency of operation. The “+5 V” dc bias should be supplied directly from a voltage regulator. This document contains information on a new product. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com July 2003 CV111-2 The Communications Edge TM UMTS-band High Linearity Downconverter Product Information Bill of Materials Downconverting Application Circuit: CV111-2PCB240RX RF = 1920 – 1980 MHz, IF = 240 MHz Ref. Desig. R1 (Targeted for UMTS-band Receive Path Downconversion Applications) R2, R3, R5 R16, C2, C14, L1, L9 R6, R7, C11 C13, C15, C19 C20, C21, C22 L5, L6, L8, L10 R8 C1, C3, C5, C6 C4, C8 C7, C10, C16 C9 C12 C17 L2 L3 L4 L7 F1 D1 U1 Component 25.5 Ω chip resistor, size 0805 0 Ω chip resistor DNP 2.2 Ω chip resistor 100 pF chip capacitor 1000 pF chip capacitor 0.1 µF chip capacitor 0.018 µF chip capacitor 1.2 pF chip capacitor 2.0 pF chip capacitor 18 nH chip inductor 120 nH chip inductor 220 nH chip inductor, size 0805 56 nH chip inductor SAWTEK Filter 855938 1920 – 1980 MHz BW Jumper wire (or 0 Ω resistor) CV111-2 WJ Converter All components are of size 0603 unless otherwise specified. DNP represents “Do Not Place” Bill of Materials Downconverting Application Circuit: CV111-2PCB240TX RF = 2110 – 2170 MHz, IF = 240 MHz Ref. Desig. (Targeted for UMTS-band Transmit Path Error Correction Feedback applications) R1 R2, R3, R5 R16, C2, C14, L1, L9 R6, R7, C11 C13, C15, C19 C20, C21, C22 L5, L6, L8, L10 R8 C1, C3, C5, C6 C4, C8 C7, C10, C16 C9 C12 C17 L2 L3 L4 L7 F1 D1 U1 Component 25.5 Ω chip resistor, size 0805 0 Ω chip resistor DNP 2.2 Ω chip resistor 100 pF chip capacitor 1000 pF chip capacitor 0.1 µF chip capacitor 0.018 µF chip capacitor 1.2 pF chip capacitor 2.0 pF chip capacitor 18 nH chip inductor 120 nH chip inductor 220 nH chip inductor, size 0805 56 nH chip inductor SAWTEK Filter 855937 2110 – 2170 MHz BW Jumper wire (or 0 Ω resistor) CV111-2 WJ Converter All components are of size 0603 unless otherwise specified. DNP represents “Do Not Place” This document contains information on a new product. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com July 2003 CV111-2 The Communications Edge TM UMTS-band High Linearity Downconverter Product Information Product Marking Outline Drawing The component will be lasermarked with a “CV111-2” product label with a four-digit alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part will be located on the website in the “Application Notes” section. ESD / MSL Information ESD Classification: Value: Test: Standard: Class 1B Passes !500 V to <1000 V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Classification: Value: Test: Standard: Class III Passes !500 V to <1000 V Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Standard: Level 1 at +250 °C convection reflow JEDEC Standard J-STD-020B Functional Pin Layout Mounting Configuration / Land Pattern Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 FUNCTION RF Amp Output GND N/C GND N/C GND Mixer RF Input GND N/C GND Mixer LO Input GND LO Amp Output GND Pin 15 16 17 18 19 20 21 22 23 24 25 26 27 28 FUNCTION LO Amp Input GND LO Amp Bias GND N/C GND IF Amp Output/Bias GND IF Amp Input GND Mixer IF Output GND RF Amp Input GND This document contains information on a new product. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com July 2003