ETC CY62146CV18

CY62146CV18 MoBL2™
256K x 16 Static RAM
Features
an automatic power-down feature that significantly reduces
power consumption by 99% when addresses are not toggling.
The device can also be put into standby mode when deselected (CE HIGH). The input/output pins (I/O0 through I/O15) are
placed in a high-impedance state when: deselected (CE
HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or
during a write operation (CE LOW and WE LOW).
• High Speed
— 55 ns and 70 ns availability
• Low voltage range:
— CY62146CV18: 1.65V−1.95V
• Pin Compatible w/ CY62146V18/BV18
• Ultra-low active power
— Typical Active Current: 0.5 mA @ f = 1 MHz
•
•
•
•
— Typical Active Current: 2 mA @ f = fmax (70 ns speed)
Low standby power
Easy memory expansion with CE and OE features
Automatic power-down when deselected
CMOS for optimum speed/power
Functional Description
The CY62146CV18 is a high-performance CMOS static RAM
organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This
is ideal for providing More Battery Life™ (MoBL™) in portable
applications such as cellular telephones. The device also has
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is
written into the location specified on the address pins (A0
through A17). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O8 through I/O15) is written into the location
specified on the address pins (A0 through A17).
Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then
data from the memory location specified by the address pins
will appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW,
then data from memory will appear on I/O8 to I/O15. See the
Truth Table at the back of this data sheet for a complete description of read and write modes.
The CY62146CV18 is available in 48-ball FBGA packaging.
Logic Block Diagram
256K x 16
RAM Array
2048 X 2048
SENSE AMPS
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
ROW DECODER
DATA IN DRIVERS
I/O0–I/O7
I/O8–I/O15
BHE
WE
CE
OE
BLE
A16
A17
A14
A15
A12
A13
A11
COLUMN DECODER
MoBL, MoBL2, and More Battery Life are trademarks of Cypress Semiconductor Corporation.
Cypress Semiconductor Corporation
Document #: 38-05010 Rev. *B
•
3901 North First Street
•
San Jose
•
CA 95134 • 408-943-2600
Revised October 31, 2001
CY62146CV18 MoBL2™
Pin Configuration[1, 2]
FBGA
Top View
1
2
3
4
5
6
BLE
OE
A0
A1
A2
NC
A
I/O8
BHE
A3
A4
CE
I/O0
B
I/O9
I/O10
A5
A6
I/O1
I/O2
C
VSS
I/O11
A17
A7
I/O3
Vccq
D
VCC
I/O12 DNU
A16
I/O4
Vssq
E
I/O14
I/O13
A14
A15
I/O5
I/O6
F
I/O15
NC
A12
A13
WE
I/O7
G
NC
A8
A9
A10
A11
NC
H
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ..................................... −65°C to +150°C
Ambient Temperature with
Power Applied.................................................. −55°C to +125°C
Supply Voltage to Ground Potential .................−0.2V to +2.4V
DC Voltage Applied to Outputs
in High Z State[3] ....................................... −0.2V to VCC + 0.2V
DC Input Voltage[3].................................... −0.2V to VCC + 0.2V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA
Operating Range
Device
CY62146CV18
Range
Ambient Temperature
VCC
Industrial
−40°C to +85°C
1.65V to 1.95V
Product Portfolio
Power Dissipation (Industrial)
Operating (ICC)
VCC Range
f = 1 MHz
Standby (ISB2)
f = fmax
Product
VCC(min)
VCC(typ)[4]
VCC(max)
Speed
Typ.[4]
Max.
Typ.[4]
Max.
Typ.[4]
Max.
CY62146CV18
1.65V
1.80V
1.95V
55 ns
0.5 mA
3 mA
2.5 mA
7 mA
1 µA
10 µA
70 ns
0.5 mA
3 mA
2 mA
6 mA
Notes:
1. NC pins are not connected to the die.
2. E3 (DNU) can be left as NC or VSS to ensure proper application.
3. VIL(min) = −2.0V for pulse durations less than 20 ns.
4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25°C.
Document #: 38-05010 Rev. *B
Page 2 of 12
CY62146CV18 MoBL2™
Electrical Characteristics Over the Operating Range
CY62146CV18-55
Parameter
Description
Test Conditions
Min.
[4]
Typ.
Max.
VOH
Output HIGH Voltage
IOH = −0.1 mA
VCC = 1.65V
VOL
Output LOW Voltage
IOL = 0.1 mA
VCC = 1.65V
VIH
Input HIGH Voltage
1.4
VCC +
0.2V
VIL
Input LOW Voltage
−0.2
IIX
Input Leakage Current GND < VI < VCC
IOZ
Output Leakage
Current
GND < VO < VCC, Output Disabled
ICC
VCC Operating Supply
Current
f = fMAX = 1/tRC
ISB1
Automatic CE
Power-Down Current— CMOS Inputs
CE > VCC – 0.2V,
VIN > VCC – 0.2V, VIN < 0.2V
f = fMAX (Address and Data Only),
f = 0 (OE, WE, BHE, and BLE)
Automatic CE
Power-Down Current— CMOS Inputs
CE > VCC−0.2V
VIN > VCC−0.2V or VIN < 0.2V,
f = 0, VCC = 1.95V
ISB2
f = 1 MHz
CY62146CV18-70
Min. Typ.[4]
1.4
Max.
Unit
1.4
V
0.2
0.2
V
1.4
VCC +
0.2V
V
0.4
−0.2
0.4
V
−1
+1
−1
+1
µA
−1
+1
−1
+1
µA
VCC = 1.95V
IOUT = 0 mA
CMOS levels
2.5
7
2
6
mA
0.5
3
0.5
3
mA
1
10
1
10
µA
Capacitance[5]
Parameter
Description
CIN
Input Capacitance
COUT
Output Capacitance
Test Conditions
Max.
Unit
6
pF
8
pF
TA = 25°C, f = 1 MHz,
VCC= VCC(typ)
Thermal Resistance
Description
Thermal Resistance
(Junction to Ambient)[5]
Test Conditions
Symbol
BGA
Unit
Still Air, soldered on a 4.25 x 1.125 inch, 4-layer printed
circuit board
ΘJA
55
°C/W
ΘJC
16
°C/W
Thermal Resistance
(Junction to Case)[5]
Note:
5. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05010 Rev. *B
Page 3 of 12
CY62146CV18 MoBL2™
AC Test Loads and Waveforms
R1
ALL INPUT PULSES
VCC
VCC Typ
OUTPUT
10%
90%
10%
90%
GND
R2
30 pF
Equivalent to:
Fall Time:
1 V/ns
Rise Time:
1 V/ns
INCLUDING
JIG AND
SCOPE
THÉVENIN EQUIVALENT
RTH
OUTPUT
V
Parameters
1.8V
UNIT
R1
13500
Ohms
R2
10800
Ohms
RTH
6000
Ohms
VTH
0.80
Volts
Data Retention Characteristics (Over the Operating Range)
Parameter
Description
Conditions
VDR
VCC for Data Retention
ICCDR
Data Retention Current
tCDR[5]
Chip Deselect to Data
Retention Time
tR[6]
Operation Recovery Time
Min.
Typ.[4]
1.0
VCC = 1.0V
CE > VCC − 0.2V,
VIN > VCC − 0.2V or VIN < 0.2V
1
Max.
Unit
1.95
V
8
µA
0
ns
tRC
ns
Data Retention Waveform
DATA RETENTION MODE
VCC
VCC(min.)
VDR > 1.0 V
tCDR
VCC(min.)
tR
CE
Note:
6.
Full device operation requires linear VCC ramp from VDR to VCC(min) > 100 µs or stable at VCC(min) > 100 µs.
Document #: 38-05010 Rev. *B
Page 4 of 12
CY62146CV18 MoBL2™
Switching Characteristics Over the Operating Range[7]
55 ns
Parameter
Description
Min.
70 ns
Max.
Min.
Max.
Unit
READ CYCLE
tRC
Read Cycle Time
tAA
Address to Data Valid
tOHA
Data Hold from Address Change
tACE
CE LOW to Data Valid
55
70
ns
tDOE
OE LOW to Data Valid
25
35
ns
tLZOE
OE LOW to Low Z
55
55
[8]
10
OE HIGH to High Z
tLZCE
CE LOW to Low Z[8]
70
20
ns
25
10
ns
ns
tHZCE
CE HIGH to High Z
tPU
CE LOW to Power-Up
tPD
CE HIGH to Power-Down
55
70
ns
tDBE
BLE/BHE LOW to Data Valid
25
35
ns
tLZBE
BLE/BHE LOW to Low Z
tHZBE
20
ns
ns
5
5
[8, 9]
ns
10
5
[8, 9]
tHZOE
70
0
[8]
BLE/BHE HIGH to High Z
0
5
[8, 9]
25
ns
5
20
ns
ns
25
ns
[10]
WRITE CYCLE
tWC
Write Cycle Time
55
70
ns
tSCE
CE LOW to Write End
40
60
ns
tAW
Address Set-Up to Write End
40
60
ns
tHA
Address Hold from Write End
0
0
ns
tSA
Address Set-Up to Write Start
0
0
ns
tPWE
WE Pulse Width
40
50
ns
tBW
BLE/BHE LOW to Write End
40
60
ns
tSD
Data Set-Up to Write End
25
30
ns
tHD
Data Hold from Write End
0
0
ns
tHZWE
tLZWE
WE LOW to High Z
[8, 9]
WE HIGH to Low Z
[8]
15
5
25
10
ns
ns
Notes:
7. Test conditions assume signal transition time of 3ns or less, timing reference levels of VCC(typ)/2, input pulse levels of 0 to VCC(typ), and output loading of the
specified IOL/IOH and 30-pF load capacitance
8. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
9. tHZOE, tHZCE, tHZBE and tHZWE transitions are measured when the outputs enter a high impedance state.
10. The internal write time of the memory is defined by the overlap of WE, CE = VIL, BHE and/or BLE =VIL. All signals must be ACTIVE to initiate a write and any
of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates
the write.
Document #: 38-05010 Rev. *B
Page 5 of 12
CY62146CV18 MoBL2™
Switching Waveforms
Read Cycle No. 1(Address Transition Controlled)
[11, 12]
tRC
ADDRESS
tAA
tOHA
DATA OUT
DATA VALID
PREVIOUS DATA VALID
Read Cycle No. 2 (OE Controlled)
[12, 13]
ADDRESS
tRC
CE
tPD
tHZCE
tACE
OE
tHZOE
tDOE
BHE/BLE
tLZOE
tHZBE
tDBE
tLZBE
DATA OUT
HIGH IMPEDANCE
HIGH
IMPEDANCE
DATA VALID
tLZCE
VCC
SUPPLY
CURRENT
tPU
ICC
50%
50%
ISB
Notes:
11. Device is continuously selected. OE, CE = VIL, BHE and/or BLE = VIL..
12. WE is HIGH for read cycle.
13. Address valid prior to or coincident with CE, BHE, BLE, transition LOW.
Document #: 38-05010 Rev. *B
Page 6 of 12
CY62146CV18 MoBL2™
Switching Waveforms
Write Cycle No. 1(WE Controlled)
[10, 14, 15]
tWC
ADDRESS
tSCE
CE
tAW
tHA
tSA
tPWE
WE
tBW
BHE/BLE
OE
tSD
DATA I/O
tHD
DATAIN VALID
NOTE 16
tHZOE
Write Cycle No. 2 (CE Controlled)
[10, 14, 15]
tWC
ADDRESS
tSCE
CE
tSA
tAW
tHA
tPWE
WE
tBW
BHE/BLE
OE
tSD
DATA I/O
tHD
DATAIN VALID
NOTE 16
tHZOE
Notes:
14. Data I/O is high impedance if OE = VIH.
15. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state.
16. During this period, the I/Os are in output state and input signals should not be applied.
Document #: 38-05010 Rev. *B
Page 7 of 12
CY62146CV18 MoBL2™
Switching Waveforms
[15]
Write Cycle No. 3 (WE Controlled, OE LOW)
tWC
ADDRESS
tSCE
CE
tBW
BHE/BLE
tAW
tHA
tSA
tPWE
WE
tHD
tSD
DATAI/O
NOTE 16
DATAIN VALID
tLZWE
tHZWE
Write Cycle No. 4 (BHE/BLE Controlled, OE LOW)
[15]
tWC
ADDRESS
CE1
tSCE
tAW
tHA
tBW
BHE/BLE
tSA
tPWE
WE
tSD
DATA I/O
NOTE 16
Document #: 38-05010 Rev. *B
tHD
DATAIN VALID
Page 8 of 12
CY62146CV18 MoBL2™
Typical DC and AC Characteristics
(Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC Typ, TA = 25°C.)
Standby Current vs. Supply Voltage
Operating Current
vs. Supply Voltage
(f = fmax, 55 ns)
3.5
2.4
MoBL2
(f = fmax, 70 ns)
3.0
ISB (µA)
ICC (mA)
2.0
1.6
1.2
MoBL2
2.0
1.5
1.0
0.8
(f = 1 MHz)
0.4
0.0
1.65
0.5
0
1.80
SUPPLY VOLTAGE (V)
1.95
1.65
1.80
1.95
SUPPLY VOLTAGE (V)
Access Time vs. Supply Voltage
40
MoBL2
35
TAA (ns)
30
25
20
15
10
1.65
1.8
1.95
SUPPLY VOLTAGE (V)
Truth Table
CE
WE
OE
BHE
BLE
H
X
X
X
X
High Z
Deselect/Power-Down
Standby (ISB)
L
X
X
H
H
High Z
Output Disabled
Active (ICC)
L
H
L
L
L
Data Out (I/OO–I/O15)
Read
Active (ICC)
L
H
L
H
L
Data Out (I/OO–I/O7);
I/O8–I/O15 in High Z
Read
Active (ICC)
L
H
L
L
H
Data Out (I/O8–I/O15);
I/O0–I/O7 in High Z
Read
Active (ICC)
L
H
H
L
L
High Z
Output Disabled
Active (ICC)
L
H
H
H
L
High Z
Output Disabled
Active (ICC)
L
H
H
L
H
High Z
Output Disabled
Active (ICC)
L
L
X
L
L
Data In (I/OO–I/O15)
Write
Active (ICC)
L
L
X
H
L
Data In (I/OO–I/O7);
I/O8–I/O15 in High Z
Write
Active (ICC)
L
L
X
L
H
Data In (I/O8–I/O15);
I/O0 –I/O7 in High Z
Write
Active (ICC)
Document #: 38-05010 Rev. *B
Inputs/Outputs
Mode
Power
Page 9 of 12
CY62146CV18 MoBL2™
Ordering Information[17]
Speed
(ns)
70
55
Package
Name
Package Type
Operating
Range
CY62146CV18LL-70BAI
BA48B
48-Ball Fine Pitch BGA (7mm x 8.5mm x 1.2mm)
Industrial
CY62146CV18LL-70BVI
BV48A
48-Ball Fine Pitch BGA (6mm x 8mm x 1mm)
CY62146CV18LL-55BAI
BA48B
48-Ball Fine Pitch BGA (7mm x 8.5mm x 1.2mm)
CY62146CV18LL-55BVI
BV48A
48-Ball Fine Pitch BGA (6mm x 8mm x 1mm)
Ordering Code
Package Diagrams
48-Ball (7 mm x 8.5 mm x 1.2 mm) Fine Pitch BGA BA48B
51-85106-B
Note:
17. Gray Shading represents preliminary information.
Document #: 38-05010 Rev. *B
Page 10 of 12
CY62146CV18 MoBL2™
Package Diagrams (continued)
48-Ball (6 mm x 8 mm x 1 mm) Fine Pitch BGA BV48A
Bottom View
PR
EL
IM
IN
AR
Y
Top View
Document #: 38-05010 Rev. *B
Page 11 of 12
© Cypress Semiconductor Corporation, 2001. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.
CY62146CV18 MoBL2™
Document Title: CY62146CV18 MoBL2™, 256K x 16 Static RAM
Document Number: 38-05072
REV.
ECN NO.
Issue
Date
Orig. of
Change
Description of Change
**
107265
09/15001
SZV
Change from Spec number: 38-01046 to 38-05072
*A
107702
06/15/01
MGN
Deactivated spec.
*B
111468
11/02/01
MGN
Die Rev (R5 to R7), Change part number from CY62146BV18 to CY62146CV18
Document #: 38-05010 Rev. *B
Page 12 of 12