DG271 High-Speed Quad Monolithic SPST CMOS Analog Switch Features Benefits Applications Fast Settling Times Reduced Switching Glitches High Precision Fast Switching tON: 55 ns Low Charge Injection: 5 pC Low rDS(on): 32 TTL/CMOS Compatible Low Leakage: 50 pA High Speed Switching Sample/Hold Digital Filters Op Amp Gain Switching Flight Control Systems Automatic Test Equipment Choppers Communication Systems Description The DG271 high speed quad single-pole single-throw analog switch is intended for applications that require low on-resistance, low leakage currents, and fast switching speeds. Built on Siliconix’ proprietary high voltage silicon gate process to achieve superior on/off performance, each switch conducts equally well in both directions when on, and blocks up to the supply voltage when off. An epitaxial layer prevents latchup. Functional Block Diagram and Pin Configuration LCC Dual-In-Line and SOIC D1 IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 V– 4 13 V+ GND 5 12 NC S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 Key 3 IN1 NC IN2 2 1 20 D2 19 S1 4 18 S2 V– 5 17 V+ NC 6 16 NC 7 15 NC 8 14 S3 GND S4 9 D4 Top View 10 11 12 IN4 NC IN3 Top View 13 D3 Truth Table Logic Switch 0 ON 1 OFF Logic “0” 0 0.8 V Logic “1” 2.0 V Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70043. Siliconix S-53750—Rev. E, 14-Jul-97 1 DG271 Ordering Information Temp Range Package 0 to 70_C 16-Pin Plastic DIP DG271CJ Part Number –40 to 85_C 16-Pin Narrow SOIC DG271DY DG271AK 16-Pin CerDIP DG271AK/883 5962-8671602MEA –55 to 125_C LCC-20 DG271AZ/883 5962-8671602M2A Absolute Maximum Ratings V+ to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V or 20 mA, whichever occurs first Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D (Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature (AK, AZ, DY Suffix) . . . . . –65 to 150_C (CJ Suffix) . . . . . . . . . . . . . –65 to 125_C Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW 16-Pin Plastic Narrow SOICd . . . . . . . . . . . . . . . . . . . . . . . . 600 mW 16-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW LCC-20f . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/_C above 75_C d. Derate 7.6 mW/_C above 75_C e. Derate 12 mW/_C above 75_C f. Derate 10 mW/_C above 75_C Schematic Diagram (Typical Channel) V+ SX 5V Reg Level Shift/ Drive V– V+ DX INX GND V– Figure 1. 2 Siliconix S-53750—Rev. E, 14-Jul-97 DG271 Specificationsa C, D Suffix Conditions Unless Otherwise Specified Parameter A Suffix –55 to 125_C 0 to 70_C –40 to 85_C V+ = 15 V, V V– V = –15 15 V VIN = 2.4 V, 0.8 Vf Tempb VANALOG Full rDS(on) IS = 1 mA, VD = "10 V Room Full 32 Room Full "0.05 –1 –60 1 60 –1 –20 1 20 Room Full "0.05 –1 –60 1 60 –1 –20 1 20 VS = VD = "14 V Room Full "0.05 –1 –60 1 60 –1 –20 1 20 VIN = 2 V Full 0.010 –1 1 –1 1 VIN = 15 V Full 0.010 –1 1 –1 1 VIN = 0 V Full 0.010 –1 1 –1 1 Room Full 55 65 80 65 80 Room Full 50 65 80 65 80 Room –5 VS = 0 V,, VIN = 5 V f = 1 MHz MH Room 8 Room 8 Symbol Typc Mind Maxd Mind Maxd Unit Analog Switch Analog Signal Rangee Drain-Source On-Resistance IS(off) VD = "14 V V, VS = #14 V Switch Off Leakage Current ID(off) Channel On Leakage Current ID(on) + IS(on) –15 15 –15 50 75 15 V 50 75 W nA Digital Control Input Current with Voltage High IINH Input Current with Voltage Low IINL mA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Charge Injection Q VS = "10 V S Fi See Figure 2 CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 W See Figure 3 Source Off Capacitance CS(off) Drain Off Capacitance CD(off) Channel On Capacitance CD(on) VD = VS = 0 V, VIN = 0 V Room 30 Off Isolation OIRR Room 85 Crosstalk XTALK CL = 10 pF, RL = 1 kW f = 100 kHz See Figures 4 and 5 Room 100 Room Full 5.5 Room Full –3.4 ns pC pF dB Supply Positive Supply Current I+ Negative Supply Current I– 7.5 9 7.5 9 All Channels On or Off mA –6 –8 –6 –8 Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Siliconix S-53750—Rev. E, 14-Jul-97 3 DG271 Typical Characteristics rDS(on) vs. VD and Power Supply Voltages 60 50 5 V 40 10 V 30 15 V 20 20 V 10 0 –20 –16 –12 –8 –4 0 4 8 12 16 rDS(on) vs. VD and Temperature 50 rDS(on) – Drain-Source On-Resistance ( W ) rDS(on) – Drain-Source On-Resistance ( W ) 70 20 V+ = 15 V V– = –15 V 40 125_C 85_C 30 25_C 20 0_C –55_C 10 0 –15 –10 –5 VD – Drain Voltage (V) 0 5 10 15 VD – Drain Voltage (V) Leakage Currents vs. Temperature Input Switching Threshold vs. Supply Voltage 10 nA 2.5 ID(on) 2 Leakage VIN ( V ) 1 nA 1.5 1 IS(off), ID(off) 100 pA 0.5 0 4 6 10 pA 8 10 12 14 16 18 20 Positive/Negative Supplies (V) –55 –35 –15 85 105 125 tON 50 Switching Time (ns) Switching Time (ns) 65 55 50 45 tOFF 40 45 tON 40 35 35 tOFF 30 –25 0 25 50 Temperature (_C) 4 45 Switching Time vs. Power Supply Voltage Switching Times vs. Temperature 30 –55 25 Temperature (_C) 55 V+ = 15 V V– = –15 V 5 75 100 125 4 6 8 10 12 14 16 18 20 Supply Voltage (V) Siliconix S-53750—Rev. E, 14-Jul-97 DG271 Typical Characteristics (Cont’d) Switching Times vs. Temperature 90 V+ = 15 V V– = –15 V Switching Times vs. Power Supply Voltage 160 70 Switching Time (ns) Switching Time (ns) 80 180 t(on) 60 50 t(off) 40 140 120 80 60 30 –55 –35 –15 5 25 45 65 85 105 125 100 40 4 6 Temperature (_C) 8 10 12 14 16 18 20 V+ – Positive Supply (V) Test Circuits 5V Logic Input 0 V +15 V V+ 10 V S D VO IN 5V GND V– RL 1 k CL 35 pF Switch VS Input tr <20 ns tf <20 ns 50% tOFF VO 90% Switch V Output O tON CL (includes fixture and stray capacitance) –15 V VO = VS RL RL + rDS(on) Figure 2. Switching Time Siliconix S-53750—Rev. E, 14-Jul-97 5