DIM400PBM17-A000 DIM400PBM17-A000 IGBT Bi-Directional Switch Module Preliminary Information Replaces issue June 2002, version DS5524-2.0 FEATURES ■ 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5524-2.2 July 2002 KEY PARAMETERS VDRM (typ) VT (max) IC (max) IC(PK) ±1700V 4.9V 400A 800A APPLICATIONS ■ Matrix Converters ■ Brushless Motor Controllers ■ Frequency Converters 1(E1/E2) 2(C1) 3(C2) 5(E1) 4(G1) The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM400PBM17-A000 is a bi-directional 1700V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) switch. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. This module is optimised for applications requiring high thermal cycling capability. 6(G2) 7(E2) Fig. 1 Bi-directional switch circuit diagram 6 7 3 2 1 ORDERING INFORMATION 5 4 The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. 8 Order As: DIM400PBM17-A000 Note: When ordering, please use the whole part number. Outline type code: P (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/10 DIM400PBM17-A000 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol Parameter VDRM Off-state repetitive maximum voltage Test Conditions VGE = 0V Max. Units ±1700 V ±20 V (measured across terminals 2 and 3) VGES Gate-emitter voltage - Continuous collector current Tcase = 75˚C 400 A IC(PK) Peak collector current 1ms, Tcase = 110˚C 800 A Pmax Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C 3470 W Diode I2t value VR = 0, tp = 10ms, Tvj = 125˚C 30 kA2s Visol Isolation voltage - per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 4000 V QPD Partial discharge - per module IEC1287. V1 = 1800V, V2 = 1300V, 50Hz RMS 10 PC IC I2t 2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM400PBM17-A000 THERMAL AND MECHANICAL RATINGS Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Test Conditions Parameter Symbol Rth(j-c) AlN AlSiC 20mm 10mm 175 Thermal resistance - transistor (per arm) Continuous dissipation - Min. Typ. Max. Units - - 36 ˚C/kW - - 80 ˚C/kW - - 8 ˚C/kW junction to case Rth(j-c) Thermal resistance - diode (per arm) Continuous dissipation junction to case Rth(c-h) Tj Tstg - Thermal resistance - case to heatsink Mounting torque 5Nm (per module) (with mounting grease) Junction temperature Transistor - - 150 ˚C Diode - - 125 ˚C –40 - 125 ˚C Mounting - M6 - - 5 Nm Electrical connections - M4 - - 2 Nm Electrical connections - M8 - - 10 Nm - Storage temperature range Screw torque Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/10 DIM400PBM17-A000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 1 mA VGE = 0V, VCE = VCES, Tcase = 125˚C - - 12 mA Gate leakage current VGE = ±20V, VCE = 0V - - 2 µA VGE(TH) Gate threshold voltage IC = 20mA, VGE = VCE 4.5 5.5 6.5 V VCE(sat) Collector-emitter saturation voltage VGE = 15V, IC = 400A - 2.7 3.2 V VGE = 15V, IC = 400A, Tcase = 125˚C - 3.4 4.0 V On-state voltage VGE = 15V, IC = 400A - 4.9 - V (measured across terminals 2 and 3) VGE = 15V, IC = 400A, Tcase = 125˚C - 5.7 - V IF Diode forward current DC - - 400 A IFM Diode maximum forward current tp = 1ms - - 800 A VF Diode forward voltage IF = 400A - 2.2 2.5 V IF = 400A, Tcase = 125˚C - 2.3 2.6 V VCE = 25V, VGE = 0V, f = 1MHz - 30 - nF Symbol ICES IGES VT Cies LM RINT SCData Parameter Collector cut-off current Input capacitance Test Conditions Module inductance - per arm - - 20 - nH Internal transistor resistance - per arm - - 0.27 - mΩ Short circuit. ISC Tj = 125˚C, VCC = 1000V, I1 - 1850 - A tp ≤ 10µs, VCE(max) = VCES – L*. di/dt I2 - 1600 - A IEC 60747-9 Note: L* is the circuit inductance + LM 4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM400PBM17-A000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise Min. Typ. Max. Units IC = 400A - 1150 - ns Fall time VGE = ±15V - 100 - ns EOFF Turn-off energy loss VCE = 900V - 120 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 4.7Ω - 250 - ns L ~ 100nH - 250 - ns Parameter Symbol td(off) tf tr Turn-off delay time Rise time Test Conditions EON Turn-on energy loss - 150 - mJ Qg Gate charge - 4.5 - µC Qrr Diode reverse recovery charge IF = 400A, VR = 900V, - 100 - µC Irr Diode reverse current dIF/dt = 3000A/µs - 230 - A - 70 - mJ Min. Typ. Max. Units IC = 400A - 1400 - ns Fall time VGE = ±15V - 130 - ns EOFF Turn-off energy loss VCE = 900V - 180 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 4.7Ω - 400 - ns L ~ 100nH - 250 - ns - 170 - mJ IF = 400A, VR = 900V, - 170 - µC dIF/dt = 2500A/µs - 270 - A - 100 - mJ EREC Diode reverse recovery energy Tcase = 125˚C unless stated otherwise Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse current EREC Diode reverse recovery energy Test Conditions Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 5/10 DIM400PBM17-A000 TYPICAL CHARACTERISTICS 900 900 Common emitter. Tcase = 25˚C 800 Vce is measured at power busbars 800 Vce is measured at power busbars and not the auxiliary terminals and not the auxiliary terminals 700 Collector current, Ic - (A) Collector current, Ic - (A) 700 600 500 400 300 600 500 400 300 200 200 VGE = 20V 15V 12V 10V 100 0 0 0.5 1 1.5 2 2.5 3 3.5 4 Collector-emitter voltage, Vce - (V) 4.5 0 0 5 0.5 1 1.5 2 2.5 3 3.5 4 4.5 6 400 Conditions: Vce = 900V IC = 400A Tc = 125°C Switching energy, Esw - (mJ) 150 125 100 75 50 300 200 100 Eoff Eon Erec 25 Eoff Eon Erec 0 0 100 5.5 Fig. 4 Typical output characteristics Conditions: Vce = 900V 175 Tc = 125°C Rg = 4.7Ω 0 5 Collector-emitter voltage, Vce - (V) 200 Switching energy - (mJ) VGE = 20V 15V 12V 10V 100 Fig. 3 Typical output characteristics 200 300 Collector current, IC - (A) 400 500 Fig. 5 Typical switching energy vs collector current 6/10 Common emitter. Tcase = 125˚C 0 4 8 12 Gate Resistance, Rg - (Ohms) 16 Fig. 6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM400PBM17-A000 900 800 VF is measured at power busbars and not the auxiliary terminals 800 Chip 700 700 Tj = 25˚C Module Collector current, IC - (A) Foward current, IF - (A) 600 500 Tj = 125˚C 400 300 600 500 400 300 200 200 100 0 0 2.0 1.0 1.5 2.5 Foward voltage, VF - (V) 0.5 3.0 3.5 Conditions: 100 Tcase = 125˚C, Vge = 15V, Rg(off) = 4.7ohms 0 0 200 400 600 800 1000 1200 1400 1600 1800 Collector emitter voltage, Vce - (V) Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area 100 Diode 400 Transient thermal impedance, Zth (j-c) - (°C/kW ) Transistor 350 Reverse current, IR - (A) 300 250 200 150 100 50 10 1 Tj = 125˚C 0 0 400 IGBT Diode 1200 800 Reverse voltage, VR - (V) 1600 Fig. 9 Diode reverse bias safe operating area 2000 0.1 0.001 Ri (˚C/KW) τi (ms) Ri (˚C/KW) τi (ms) 0.01 1 1.12 0.12 2.47 0.11 0.1 Pulse width, tp - (s) 3 11.28 47.15 25.92 48.75 1 4 15.62 257.21 33.06 256.75 10 Fig. 10 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 2 8.01 3.89 18.52 4.24 7/10 DIM400PBM17-A000 300 700 250 500 Phase current - (A rms) DC collector current, IC - (A) 600 400 300 200 150 100 200 50 100 0 0 20 40 60 80 100 Case temperature, Tcase - (˚C) 120 Fig. 11 DC current rating vs case temperature 8/10 Conditions: Input line voltage = 480V Power factor = 0.85V q factor = 0.5 Tjmax = 125˚C Tcase = 100˚C Switching strategy: Venturini 140 0 0 2 4 10 12 6 8 Switching frequency, (kHz) 14 16 Fig. 12 Matrix converter phase current vs switching frequency Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM400PBM17-A000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal weight: 750g Module outline type code: P Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 9/10 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. www.dynexsemi.com