DN6849 4.5±0.3 4.0±0.3 Hall IC (Operating Temperature Range Topr = – 40 to +100˚C, Operating in Alternative ■ Overview • • • • 0.43 – 0.05 1 2 3 1 : VCC 2 : GND 3 : Output 5˚ 5˚ 2˚ 2˚ SSIP003-P-0000A (E-3S) DN6849SE Unit : mm 0.55±0.15 0.4±0.1 4.52±0.3 (1.0) 4.52±0.3 (1.0) perature compensator Wide operating supply voltage range (VCC=4.5 to 16V) Operating in alternative magnetic field TTL and MOS ICs directly drivable by output Output open collector + 0.1 0.5±0.1 1.27 ■ Features • High sensitivity and low drift • Stable temperature characteristics due to the additional tem- 0.8±0.1 45˚ 12.5±06.5 The DN6849/SE/TE/S is a combination of a Hall element, amplifier, Schmitt circuit, and stabilized power supply/temperature compensator integrated on an identical chip by using the IC technology. It amplifies Hall element output at the amplifier, converts into a digital signal through the Schmitt circuit, and drives the TTL or MOS IC directly. (0.72) (0.4) 1.27 2 to 5˚ 1.54±0.1 1 2 3 ■ Applications • Speed sensors • Position sensors • Rotation sensors • Keyboard switches • Microswitches 1 : VCC 2 : GND 3 : Output 2˚ R0.25 SSIP003-P-0000 (SE-3S) Unit : mm (0.6) DN6849TE (1.0) 10.0±0.6 (1.0) Note) This IC is not suitable for car electrical equipments. 0.6±0.15 · DN6849/SE/TE 1.27 Stabilized power supply temperature correction circuit 1 VCC 3 Output 2 GND (0.7) 3.3±0.3 4.0±0.3 ■ Block Diagram Unit : mm 5˚ 10.5±0.5 Magnetic Field) 2.0±0.3 0.7 1.0 2˚ DN6849/SE/TE/S 0.5±0.1 1.2±0.1 (0.2) 1 2 3 1 : VCC 2 : GND 3 : Output SSIP003-P-0000B (TE-3S) Unit : mm 2 3 NC 2 or GND Stabilized power supply temperature correction circuit 1 VCC 3 Output 0.3 to 0.5 3.0±0.3 5.4±0.4 4 Hall element Amp. GND Schmitt trigger Output stage ESOP004-P-0200 (SOH-4D) 0.4±0.2 · DN6849S 1.5±0.3 0.95±0.2 Schmitt trigger Output stage 1.6 4 0.15 0 to 0.1 Amp. 0.6±0.2 Hall element 1 3.0±0.3 DN6849S 1 : VCC 2 : NC or GND 3 : Output 4 : GND ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Rating Unit Supply voltage VCC 18 V Supply current ICC 8 mA Circuit current IO 20 mA Power dissipation PD 150 mW Opearting ambient temperature Topr –40 to+100 ˚C Storage temperature Tstg –55 to+125 ˚C ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Operating flux density Condition B1 (L to H) VCC=12V B2 (H to L) VCC=12V Hysteresis width BW Low output voltage VOL High output current IOH Supply current ICC min typ –17.5 max –6 6 VCC=12V VCC=4.5 to 16V, IO=12mA, B=17.5mT VCC=4.5 to 16V, VO=16V, B=–17.5mT 7 Unit mT 17.5 10 mT mT 0.4 V 10 µA VCC=16V 6 mA VCC=4.5V 5.5 mA ■ Hall Element Position · DN6849SE · DN6849S 1.0 1.5 1. 1.15 1.5 1.0 1.25 1.0 1.3 1.0 0 Unit : mm The center of the Hall element is in the hatched area in the right figure. · DN6849TE 1.0 1.63 1. 1.0 1.75 0 · DN6849 1.5 Distance from package surface to sensor DN6849 DN6849SE DN6849TE DN6849S 0.7 0.42 0.4 0.65 Marking surface Applied flux direction Output voltage (VO) ■ Flux-Voltage Conversion Characteristics B1 B2 Flux density (B) ■ Precaution on Use 1. Change of the operation magnetic flux density does not depend on the supply voltage, because the stabilization power supply is built-in. (only for the range ; VCC= 4.5 to 16V) 2. Change from “H” to “L” level increases the supply current by approx. 1mA. ■ Characteristics Curve Supply voltage – Ambient temperature Operating flux density – Ambient temperature Operating flux density – Supply voltage 8 VCC = 12V VCC = 16V 5 4 VCC = 4.5V 3 2 1 –50 –25 0 25 50 75 100 125 Output low level voltage – Ambient temperature 100 Output “L” level voltage (mV) 0 to L Sample 1, BH Sample 2, BH to L Samp le 3, BH to L Sample 1, –10 BL to H Sample 2, BL to H Sample 3, B L to H –20 Ambient temperature (˚C) 90 10 20 Operating flux density (mT) Operating flux density (mT) Supply current (mA) 6 0 Ta = 25˚C 20 7 VCC = 12V IO = 12mA 80 70 60 50 40 30 20 10 0 –50 –25 0 25 50 75 100 125 Ambient temperature (˚C) BH to L 10 0 BL to H –10 –20 –50 –25 0 25 50 75 100 125 Ambient temperature (˚C) 0 2 4 6 8 10 12 14 16 18 20 Supply voltage (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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