ESJA28 (2.2kV, 2.7kV/10mA) Outline Drawings HIGH VOLTAGE DIODE ESJA19 is high reliability resin molded type high voltage diode in small size package which is sealed (a multilayed mesa type silicon chip) by epoxy resin. Cathode Mark Lot No. o 2.5 27 min. Features High reliability design. Ultra small pakage. High temperature resistivity 6.5 o 0.5 27 min. Cathode Mark Type Applications Distributor-less Ignition system of Coil Distributed Type for Automobile Mark ESJA28-02S Maximum Ratings and Characteristics ESJA28-03 Absolute Maximum Ratings Items Symbols Repetitive Peak Reverse Voltage VRRM Non-Repetitive Peak Reverse Voltage VRSM Average Output Current IO Surge Current IFSM ESJA28 Condition f=60Hz Ignition Pulse -02S -03 2.2 2.7 kV 2.5 3.0 kV f=150Hz,1minute 60 Hz Sine wave 10 60 Hz Sine-half wave mA 1.0 peak value Operating Junction Temperature Tj Storage Temperature Tstg Units 150 A °C -40 to +150 °C Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Symbols Conditions ESJA28 -02S -03 7 8.4 Units Maximum Forward Voltage Drop VF IF=10mA Maximum Reverse Current IR1 VR=2.2kV 5 µA Maximum Reverse Current IR2 VR=2.5kV 10 µA Minimum Avalanche Breakdown Voltage Vz Iz=100µA 2.7 V kV ESJA28(2.2kV,2.7kv/5mA) Characteristics 100 ESJA28-03 Tj=150°C 1 ESJA28-02S 80 ESJA28-03 I 60 [mA] Tj=100°C 0.1 IR F ESJA28-02S [µA] 40 Tj=100°C 0.01 Tj= 25°C ESJA28-03 ESJA28-02S 20 Tj= 25°C ESJA28-03 ESJA28-02S 0 1E-3 0 2 4 V 6 F 8 10 0 1 2 [V] VR Forward Characteristics 3 4 [kV] Reverse Characteristics 2.0 Tj=25°C f=1MHz 1.6 100 I Cj 1.2 R [ µ A] [pF] 10 0.8 Tj= 25°C Tj=100°C ESJA28-02S ESJA28-02S 0.4 ESJA28-03 ESJA28-03 0.0 1 0 40 80 V Bias 120 160 200 [V] 2 4 V 6 AV [kV] 8 10 Avalanche Breakdown Voltage Junction Capacitance Characteristics Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com