FXT2907A SWITCHING CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Output Capacitance Cobo 8 pF VCB=-10V, IE=0, f=100KHz Input Capacitance Cibo 30 pF VBE=2V, IC=0, f=100KHz Turn On Time ton 50 ns VCE=-30V IC=-150mA, IB1=15mA (See Turn On Circuit) Turn Off Time toff 110 ns VCC=-6V, IC=-150mA IB1= IB2=-15mA (See Turn Off Circuit) TURN ON TIME TEST CIRCUIT -30V 200Ω PNP SILICON PLANAR SWITCHING TRANSISTOR ISSUE 2 SEPTEMBER 94 FEATURES * 60 Volt VCEO * Fast switching B C PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -600 mA 500 mW -55 to +175 °C Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). Scope: Rise Time < 5 ns 1KΩ -16V 50Ω Pulse width <200ns TURN OFF TIME TEST CIRCUIT 15V 1KΩ 1KΩ 0 -30V Pulse width <200ns E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER 0 FXT2907A -6V 37Ω Scope: Rise Time < 5 ns SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -60 V IC=-10µ A, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -60 V IC=-10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-10µ A, IC=0 Collector-Emitter Cut-Off Current ICEX -50 nA VCE=-30V, VBE=-0.5V Collector Cut-Off Current ICBO -10 -10 µA nA VCB=-50V, IE=0 VCB=-50V, IE=0, Tamb=150°C Base Cut-Off Current IB -50 nA VCE=-30V, VBE=-0.5V Collector-Emitter Saturation Voltage VCE(sat) -0.4 -1.6 V V IC=-150mA, IB=-15mA* IC=-500mA, IB=-50mA* Base-Emitter Saturation Voltage VBE(sat) -1.3 -2.6 V V IC=-150mA, IB=-15mA* IC=-500mA, IB=-50mA* Static Forward Current Transfer Ratio hFE Transition Frequency fT 50Ω 75 100 100 100 50 IC=-0.1mA, VCE=-10V IC=-1mA, VCE=-10V IC=-10mA, VCE=-10V IC=-150mA, VCE=-10V* IC=-500mA, VCE=-10V* 300 200 MHz IC=-50mA, VCE=-20V f=100MHz *Measured under pulsed conditions. Pulse width=300ms. Duty cycle ≤ 2% PAGE NO FXT2907A SWITCHING CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Output Capacitance Cobo 8 pF VCB=-10V, IE=0, f=100KHz Input Capacitance Cibo 30 pF VBE=2V, IC=0, f=100KHz Turn On Time ton 50 ns VCE=-30V IC=-150mA, IB1=15mA (See Turn On Circuit) Turn Off Time toff 110 ns VCC=-6V, IC=-150mA IB1= IB2=-15mA (See Turn Off Circuit) TURN ON TIME TEST CIRCUIT -30V 200Ω PNP SILICON PLANAR SWITCHING TRANSISTOR ISSUE 2 SEPTEMBER 94 FEATURES * 60 Volt VCEO * Fast switching B C PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -600 mA 500 mW -55 to +175 °C Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). Scope: Rise Time < 5 ns 1KΩ -16V 50Ω Pulse width <200ns TURN OFF TIME TEST CIRCUIT 15V 1KΩ 1KΩ 0 -30V Pulse width <200ns E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER 0 FXT2907A -6V 37Ω Scope: Rise Time < 5 ns SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -60 V IC=-10µ A, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -60 V IC=-10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-10µ A, IC=0 Collector-Emitter Cut-Off Current ICEX -50 nA VCE=-30V, VBE=-0.5V Collector Cut-Off Current ICBO -10 -10 µA nA VCB=-50V, IE=0 VCB=-50V, IE=0, Tamb=150°C Base Cut-Off Current IB -50 nA VCE=-30V, VBE=-0.5V Collector-Emitter Saturation Voltage VCE(sat) -0.4 -1.6 V V IC=-150mA, IB=-15mA* IC=-500mA, IB=-50mA* Base-Emitter Saturation Voltage VBE(sat) -1.3 -2.6 V V IC=-150mA, IB=-15mA* IC=-500mA, IB=-50mA* Static Forward Current Transfer Ratio hFE Transition Frequency fT 50Ω 75 100 100 100 50 IC=-0.1mA, VCE=-10V IC=-1mA, VCE=-10V IC=-10mA, VCE=-10V IC=-150mA, VCE=-10V* IC=-500mA, VCE=-10V* 300 200 MHz IC=-50mA, VCE=-20V f=100MHz *Measured under pulsed conditions. Pulse width=300ms. Duty cycle ≤ 2% PAGE NO