MICROCIRCUIT DATA SHEET Original Creation Date: 04/14/00 Last Update Date: 08/15/03 Last Major Revision Date: MNDS90C032-X-RH REV 1B1 LVDS Quad CMOS Differential Line Receiver: ALSO AVAILABLE GUARANTEED TO 50K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5 General Description The DS90C032 is a quad differential line receiver designed for applications requiring low power dissipation and high data rates. The DS90C032 accepts low voltage differential input siginal and translates them to CMOS (TTL compatible) output levels. The receiver supports a TRI-STATE function that may be used to multiplex outputs. The DS90C032 and companion line driver (DS90C031) provide a new alternative to high power pseudo-ECL devices for high speed point to point interfaces. In addition, the DS90C032A provides power-off high impedance LVDS inputs. This feature assures minimal loading effect on the LVDS bus lines when VCC is not present. Industry Part Number NS Part Numbers DS90C032 DS90C032E-QML DS90C032W-QML DS90C032W-QMLV DS90C032WG-QML DS90C032WG-QMLV DS90C032WGLQMLV DS90C032WLQMLV Prime Die DS90C032 Controlling Document SEE FEATURES SECTION Processing Subgrp Description MIL-STD-883, Method 5004 1 2 3 4 5 6 7 8A 8B 9 10 11 Quality Conformance Inspection MIL-STD-883, Method 5005 1 Static tests at Static tests at Static tests at Dynamic tests at Dynamic tests at Dynamic tests at Functional tests at Functional tests at Functional tests at Switching tests at Switching tests at Switching tests at Temp ( oC) +25 +125 -55 +25 +125 -55 +25 +125 -55 +25 +125 -55 MICROCIRCUIT DATA SHEET MNDS90C032-X-RH REV 1B1 Features - High impedance LVDS inputs with power-off Accepts small swing (330 mV) differential signal levels. Low power dissipation. Low differential skew. Low chip to chip skew Mil operating temperature range Pin compatible with DS26C32A. Compatible with IEEE P1596.3 SCI LVDS draft standard Typical Rise/Fall time is TBD CONTROLLING DOCUMENTS: DS90C032E-QML 5962-9583401Q2A DS90C032W-QML 5962-9583401QFA DS90C032W-QMLV 5962-9583401VFA DS90C032WG-QML 5962-9583401QZA DS90C032WG-QMLV 5962-9583401VZA DS90C032WGLQMLV 5962-9583401VZA DS90C032WLQMLV 5962L9583401VFA 2 MICROCIRCUIT DATA SHEET MNDS90C032-X-RH REV 1B1 (Absolute Maximum Ratings) (Note 1) Supply Voltage (Vcc) -0.3 to +6V Input Voltage (RIN+, RIN-) -0.3 to (Vcc+0.3V) Enable Input Voltage (EN, EN*) -0.3 to (Vcc+0.3V) Output Voltage (ROUT) -0.3 to (Vcc+0.3V) Storage Temperature Range (Tstg) -65 C < Ta < + 150 C Lead Temperature Soldering 4 seconds Maximum Package Power Dissipation @ +25C (Note 2) 20 PIN LCC (E Pkg) 16 PIN CERPAK (W Pkg) 16 PIN CERAMIC SOIC (WG Pkg) Thermal Resistance. (Theta JA) 20 PIN LCC (E Pkg) 16 PIN CERPAK (W Pkg) 16 PIN CERAMIC SOIC (WG Pkg) Thermal Resistance. (Theta JC) 20 PIN LCC (E Pkg). 16 PIN CERPAK (W Pkg) 16 PIN CERAMIC SOIC (WG Pkg) ESD Rating. 260 C 1830 mW 1400 mW TBD 82 C/W 148 C/W TBD 20 C/W 20 C/W TBD 2000 Volts. Note 1: Note 2: Absolute Maximum Ratings are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device should be operated at these limits. The table of "Electrical Characteristics" provides conditions for actual device operation. Derate (E Pkg) @ 12.2mW/C above +25C. Derate (W Pkg) @ 6.8 mW/C above +25C. Recommended Operating Conditions Operating Voltage (Vcc) 4.5V to 5.5V Operating Temperature Range (Ta) -55C to +125C Receiver Input Voltage GND to 2.4V 3 MICROCIRCUIT DATA SHEET MNDS90C032-X-RH REV 1B1 Electrical Characteristics DC PARAMETERS: (SEE NOTE 4) SYMBOL PARAMETER CONDITIONS NOTES PINNAME MIN MAX UNIT SUBGROUPS VTL Differential Input Low Threshold Vcm = +1.2V 1 RIN+, RIN- -100 mV 1, 2, 3 VTH Differential Input High Threshold Vcm = +1.2V 1 RIN+, RIN- 100 mV 1, 2, 3 IIN Input Current Vcc=5.5V, Vin = 2.4V RIN+, RIN- +10 uA 1, 2, 3 Vcc = 5.5V, Vin = 0 RIN+, RIN- +10 uA 1, 2, 3 Vcc = 0.0V, Vin = 2.4V RIN+, RIN- +10 uA 1, 2, 3 Vcc = 0.0V, Vin = 0.0V RIN+, RIN- +10 uA 1, 2, 3 V 1, 2, 3 0.3 V 1, 2, 3 -100 mA 1, 2, 3 +10 uA 1, 2, 3 V 1, 2, 3 VOH Output High Voltage Vcc= 4.5V, Ioh = -0.4 mA, Vid = 200mV ROUT VOL Output Low Voltage Vcc = 4.5, Iol = 2 mA, Vid = -200mV ROUT IOS Output Short Circuit Current Enabled, Vout = 0V ROUT IOZ Output TRI-STATE Current Disabled, Vout = 0V or Vcc ROUT VIH Input High Voltage 1 EN,EN* VIL Input Low Voltage 1 EN,EN* 0.8 V 1, 2, 3 II Input Current VCC = 5.5V EN, EN* +10 uA 1, 2, 3 VCL Input Clamp Voltage Icl = -18mA EN, EN* -1.5 V 1, 2, 3 Icc No Load Supply Current EN, EN* = Vcc or GND, Inputs Open Vcc 11 mA 1, 2, 3 EN, EN* = 2.4 or 0.5, Inputs Open Vcc 11 mA 1, 2, 3 EN = GND, EN* = Vcc , Inputs Open Vcc 11 mA 1, 2, 3 IccZ No Load Supply Current Receivers Disabled 4 3.8 -15 2.0 MICROCIRCUIT DATA SHEET MNDS90C032-X-RH REV 1B1 Electrical Characteristics AC PARAMETERS: (SEE NOTE 4) (The following conditions apply to all the following parameters, unless otherwise specified.) AC: VCC = 4.5V/5.0V/5.5V, CL = 20pF SYMBOL PARAMETER CONDITIONS NOTES PINNAME MIN MAX UNIT SUBGROUPS tPHLD Differential Propagation Delay High to Low Vid = 200mV, Input pulse = 1.1V to 1.3V, Vin = 1.2V (0 differential) to Vout = 1/2 Vcc 1.0 8 ns 9, 10, 11 tPLHD Differential Propagation Delay Low to High Vid = 200mV, Input pulse = 1.1V to 1.3V, Vin = 1.2V (0V differential) to Vout = 1/2 Vcc 1.0 8 ns 9, 10, 11 tSKD Differential Skew |tPHLD-tPLHD| CL = 20pF, Vid = 200mV 3 ns 9, 10, 11 tSK1 Channel to Channel Skew CL = 20pF, Vid = 200mV 2 3 ns 9, 10, 11 tSK2 Chip to Chip Skew CL = 20pF, Vid = 200mV 3 7 ns 9, 10, 11 tPLZ Disable Time Low to Z Input pulse = 0V to 3.0V, Vin = 1.5V, Vout = Vol+0.5V, Rload = 1k Ohm to VCC 20 ns 9, 10, 11 tPHZ Disable Time High to Z Input pulse = 0V to 3.0V, Vin = 1.5V, Vout = Voh-0.5V, Rload = 1k Ohm to GND 20 ns 9, 10, 11 tPZH Enable Time Z to High Input pulse = 0V to 3.0V, Vin = 1.5V, Vout = 50%, Rload = 1k Ohm to GND 20 ns 9, 10, 11 tPZL Enable Time Z to Low Input pulse = 0V to 3.0V, Vin = 1.5V, Vout = 50%, Rload = 1k Ohm to VCC 20 ns 9, 10, 11 EN, EN* = Vcc or GND, Inputs Open 20 mA 1 EN, EN* = 2.4 or 0.5, Inputs Open 20 mA 1 EN = GND, EN* = Vcc, Inputs Open 20 mA 1 AC/DC PARAMETERS: POST RADIATION LIMITS (SEE NOTE 4) Icc Iccz No Load Supply Current No Load Supply Current Receivers Disabled Note 1: Note 2: Note 3: Note 4: Tested during VOH/VOL tests. Channel to Channel Skew is defined as the difference between the propagation delay of one channel and that of the others on the same chip with an event on the inputs. Chip to Chip Skew is defined as the difference between the minimum and maximum specified differential propagation delays. Pre and post irradiaton limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post Radiation Limits Table (IF APPLICABLE). Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified. 5 MICROCIRCUIT DATA SHEET MNDS90C032-X-RH REV 1B1 Graphics and Diagrams GRAPHICS# DESCRIPTION E20ARE LCC (E), TYPE C, 20 TERMINAL(P/P DWG) W16ARL CERPACK (W), 16 LEAD (P/P DWG) WG16ARC CERAMIC SOIC (WG), 16 LEAD (P/P DWG) See attached graphics following this page. 6 MICROCIRCUIT DATA SHEET MNDS90C032-X-RH REV 1B1 Revision History Rev ECN # Originator Changes 0A0 M0003844 06/21/02 Rel Date Rose Malone Initial MDS Release 1A1 M0004012 08/15/03 Rose Malone Update MDS: MNDS90C032-X-RH, Rev. 0A0 to MNDS90C032-X-RH, Rev. 1A1. Added reference to WG pkg to Main Table, Features Section, Absolute Maximum Section and Graphics Section. 1B1 M0004182 08/15/03 Rose Malone Update MDS: MNDS90C032-X-RH, Rev. 1A1 to 1B1. MDS enhancements: Additional verbage to the general discription, Main Table and Added new bullet to the Features Section. 7