H5N2503P Silicon N Channel MOS FET High Speed Power Switching ADE-208-1374A (Z) 2nd. Edition Jun. 2002 Features • Low on-resistance: RDS(on) = 0.04 Ω typ. • Low leakage current: IDSS = 1 µA max (at VDS = 250 V) • High speed switching: tf = 190 ns typ (at VGS = 10 V, VDD = 125 V, ID = 25 A) • Low gate charge: Qg = 140 nC typ (at VDD = 200 V, VGS = 10 V, ID = 50 A) • Avalanche ratings Outline TO-3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source H5N2503P Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 250 V Gate to source voltage VGSS ±30 V Drain current ID 50 A 200 A 50 A 200 A 50 A 150 W Note1 Drain peak current ID (pulse) Body-drain diode reverse drain current IDR Body-drain diode reverse drain peak current IDR (pulse) Avalanche current IAP Note1 Note3 Note2 Channel dissipation Pch Channel to case Thermal Impedance θ ch-c 0.833 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Rev.1, Jun. 2002, page 2 of 10 H5N2503P Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 250 — — V ID = 10 mA, VGS = 0 Gate to source leak current IGSS — — ±0.1 µA VGS = ±30 V, VDS = 0 Zero gate voltage drain current IDSS — — 1 µA VDS = 250 V, VGS = 0 Gate to source cutoff voltage VGS(off) 3.0 — 4.0 V VDS = 10 V, ID = 1 mA Static drain to source on state resistance RDS(on) — 0.040 0.055 Ω ID = 25 A, VGS = 10 V Forward transfer admittance |yfs| 25 40 — S ID = 25 A, VDS = 10 V Input capacitance Ciss — 5150 — pF VDS = 25 V Output capacitance Coss — 620 — pF VGS = 0 Reverse transfer capacitance Crss — 105 — pF f = 1 MHz Turn-on delay time td(on) — 58 — ns ID = 25 A Rise time tr — 210 — ns VGS = 10 V Turn-off delay time td(off) — 220 — ns RL = 5 Ω Fall time tf — 190 — ns Rg = 10 Ω Total gate charge Qg — 140 — nC VDD = 200 V Gate to source charge Qgs — 25 — nC VGS = 10 V Gate to drain charge Qgd — 60 — nC ID = 50 A Body-drain diode forward voltage VDF — 1.0 1.5 V IF = 50 A, VGS = 0 Bidy-drain diode reverse recovery trr time — 210 — ns IF = 50 A, VGS = 0 Body-drain diode reverse recovery Qrr charge — 1.8 — µC diF/dt = 100 A/µs Note4 Note4 Notes: 4. Pulse test Rev.1, Jun. 2002, page 3 of 10 H5N2503P Main Characteristics Power vs. Temperature Derating ID (A) 300 150 100 100 50 PW DC 30 Drain Current Pch (W) Channel Dissipation Maximum Safe Operation Area 1000 200 er 10 100 Case Temperature 150 200 µs s s m s( 1s (T Operation in ho t) 25 °C ) limited by RDS(on) Ta = 25°C 1 Tc (°C) 30 3 10 100 300 1000 Drain to Source Voltage VDS (V) Typical Transfer Characteristics 100 Pulse Test 6V 60 5.5 V 40 20 5V V DS = 10 V ID (A) 7V 6.5 V Drain Current ID (A) Drain Current 80 10 V 8V ion 1 this area is Typical Output Characteristics 100 10 at 3 0.1 50 = 0µ 1m c= 0.3 0 Op 10 10 80 Pulse Test 60 40 25°C Tc = 75°C 20 –25°C VGS = 4.5 V 0 4 8 12 Drain to Source Voltage Rev.1, Jun. 2002, page 4 of 10 16 20 VDS (V) 0 2 4 6 Gate to Source Voltage 8 10 VGS (V) H5N2503P 4 3 I D = 50 A 2 25 A 1 10 A 0 Static Drain to Source on State Resistance RDS(on) (mΩ) Pulse Test 160 V GS = 10 V 120 I D = 50 A 80 25 A 0 –40 100 50 VGS = 10 V, 15 V 20 16 20 VGS (V) Static Drain to Source on State Resistance vs. Temperature 200 Pulse Test 40 Static Drain to Source on State Resistance vs. Drain Current 200 Pulse Test 10 12 4 8 Gate to Source Voltage 10 A 0 40 80 120 Case Temperature Tc (°C) 160 1 2 5 10 20 50 Drain Current ID (A) 100 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Drain to Source Saturation Voltage VDS(on) (V) 5 Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage vs. Gate to Source Voltage 100 50 20 Tc = –25°C 10 5 2 25°C 75°C 1 V DS = 10 V Pulse Test 0.5 0.2 0.2 0.5 1 5 10 20 Drain Current 2 ID (A) 50 100 Rev.1, Jun. 2002, page 5 of 10 H5N2503P Typical Capacitance vs. Drain to Source Voltage Body-Drain Diode Reverse Recovery Time 500 20000 Capacitance C (pF) 50000 Reverse Recovery Time trr (ns) 1000 200 100 50 20 10 0.1 VGS = 0 f = 1 MHz 10000 di / dt = 100 A / µs V GS = 0, Ta = 25°C Ciss 5000 2000 1000 Coss 500 200 Crss 100 50 0 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) 400 300 200 100 0 VGS V DD = 50 V 100 V 200 V VDS 16 12 8 V DD = 200 V 100 V 50 V 40 80 120 160 Gate Charge Qg (nC) Rev.1, Jun. 2002, page 6 of 10 4 0 200 10000 Switching Time t (ns) I D = 50 A Gate to Source Voltage VDS (V) Drain to Source Voltage 20 VGS (V) Dynamic Input Characteristics 500 20 40 60 Drain to Source Voltage 80 100 VDS (V) Switching Characteristics V GS = 10 V, V DD = 125 V PW = 10 µs, duty < 1 % R G =10 1000 tr t d(off) tf 100 t d(on) tr 10 0.1 0.3 1 3 Drain Current 10 30 ID (A) 100 H5N2503P Gate to Source Cutoff Voltage vs. Case Temperature Reverse Drain Current vs. Source to Drain Voltage 5 Gate to Source Cutoff Voltage V GS(off) (V) Reverse Drain Current IDR (A) 100 80 V GS = 0 V 60 40 10 V 20 5V Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 V DS = 10 V 4 I D = 10mA 3 1mA 0.1mA 2 1 0 -50 VSD (V) 0 50 100 150 Case Temperature Tc (°C) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 200 90% D.U.T. RL Vin 10Ω Vin 10 V V DD = 125 V Vout 10% 10% 10% 90% td(on) tr 90% td(off) tf Rev.1, Jun. 2002, page 7 of 10 H5N2503P Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 0.833°C/W, Tc = 25°C 0.1 0.05 PDM 0.03 0.02 1 0.0 0.01 10 µ e p ot T h 100 µ Rev.1, Jun. 2002, page 8 of 10 PW T PW uls 1s D= 1m 10 m 100 m Pulse Width PW (s) 1 10 H5N2503P Package Dimensions 15.6 ± 0.3 Unit: mm 4.8 ± 0.2 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 As of January, 2002 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 5.45 ± 0.5 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 Hitachi Code JEDEC JEITA Mass (reference value) TO-3P — Conforms 5.0 g Rev.1, Jun. 2002, page 9 of 10 H5N2503P Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-2735-9218 Fax : <852>-2730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 6.0 Rev.1, Jun. 2002, page 10 of 10