NSR15SDW1T1 NSR15SDW1T2 Dual RF Schottky Diode These diodes are designed for analog and digital applications, including DC based signal detection and mixing applications. Features: • • • • http://onsemi.com RF SCHOTTKY BARRIER DIODES 15 VOLTS, 30 mA Low Capacitance (<1 pF) Low VF (390 mV typical @ 1 mA) Low VF (1 mV typical @ 1 mA) Pins 2 and 5 Shorted Benefits: • Reduced Parasitic Losses • Accurate Signal Measurement • Reduced Cross Talk 6 5 4 1 2 3 MAXIMUM RATINGS Rating Symbol Max Unit Peak Reverse Voltage VR 15 V Forward Current IF 30 mA TJ, Tstg -65 to +150 °C Operating and Storage Temperature Range 5 4 6 1 ESD Rating: Class 1 per Human Body Model ESD Rating: Class A per Machine Model 2 3 SC-88 CASE 419B STYLE 21 THERMAL CHARACTERISTICS Characteristic Maximum Thermal Resistance Junction-to-Ambient Symbol Value Unit RJA 500 °C/W MARKING DIAGRAM R6 M R6 M = Specific Device Code = Date Code ORDERING INFORMATION Semiconductor Components Industries, LLC, 2003 March, 2003 - Rev. 1 40 Device Package Shipping NSR15SDW1T1 SC-88 3000/Tape & Reel NSR15SDW1T2 SC-88 3000/Tape & Reel Publication Order Number: NSR15SDW1T1/D NSR15SDW1T1 NSR15SDW1T2 ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit VBR 15 20 - V Reverse Leakage (VR = 1 V) IR - 2 50 nA Forward Voltage (IF = 1 mA) VF1 - 390 415 mV Forward Voltage (IF = 10 mA) VF2 - 530 680 mV Delta VF (IF = 1 mA, All Diodes) VF - 1 15 mV CT - 0.8 1 pF Breakdown Voltage (IR = 10 A) Capacitance (VF = 0 V, f = 1 MHz) 100 k IR, REVERSE CURRENT (nA) IF, FORWARD CURRENT (mA) 100 10 25°C 75°C 1 125°C 0.1 0.01 -25 °C 10 k 125°C 1k 75°C 100 25°C 10 1 0 0.1 0.2 0.3 0.4 0.5 VF, FORWARD VOLTAGE (V) 0.6 0 0.7 5 10 VR, REVERSE VOLTAGE (V) Figure 1. Forward Current versus Forward Voltage at Temperatures Figure 2. Reverse Current versus Reverse Voltage 1000 RD, DYNAMIC RESISTANCE () CT, CAPACITANCE (pF) 1 0.9 0.8 0.7 0.6 0.5 15 100 10 1 0 1 2 3 4 5 6 VR, REVERSE VOLTAGE (V) 7 8 0.1 Figure 3. Total Capacitance versus Reverse Voltage 1 10 IF, FORWARD CURRENT (mA) 100 Figure 4. Dynamic Resistance versus Forward Current http://onsemi.com 41 100 IF (left scale) 10 10 VF (right scale) 1 0.3 0.4 0.5 0.6 0.7 VF, FORWARD VOLTAGE (V) 0.8 0.1 Figure 5. Typical VF Match at Mixer Bias Levels IF (left scale) 1 VF (right scale) 1 0.1 0.175 0.225 0.275 VF, FORWARD VOLTAGE (V) 0.325 Figure 6. Typical VF Match at Detector Bias Levels 1 10 DC Bias = 3 A 1 0.1 0.1 RF IN NSR15SDW1 VDET, (Vdc) VDET, (Vdc) 10 100 10 1 0.1 VF, FORWARD VOLTAGE DIFFERENCE (mV) IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (mA) 100 VF, FORWARD VOLTAGE DIFFERENTIAL (mV) NSR15SDW1T1 NSR15SDW1T2 VO 18 nH 0.01 0.001 RF IN 0.0001 100 pF 3.3 nH 0.01 68 100 k NSR15SDW1 VO 100 pF 4.7 k 0.00001 0.001 -40 -35 -30 -25 -20 -15 -10 Pin, INPUT POWER (dBm) -5 0.000001 -20 -15 0 Figure 7. Typical Output Voltage versus Input Power, Small Signal Detector Operating at 850 MHz -10 5 10 15 -5 0 Pin, INPUT POWER (dBm) CONVERSION LOSS (dB) 10 9 8 7 0 2 4 6 8 10 LOCAL OSCILLATOR POWER (dBm) 12 Figure 9. Typical Conversion Loss versus L.O. Drive, 2.0 GHz http://onsemi.com 42 25 30 Figure 8. Typical Output Voltage versus Input Power, Large Signal Detector Operating at 915 MHz 12 6 -2 20 NSR15SDW1T1 NSR15SDW1T2 PACKAGE DIMENSIONS SC-88 (SOT-363) CASE 419B-02 ISSUE N A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. G 6 5 4 DIM A B C D G H J K N S -B- S 1 2 3 D 6 PL 0.2 (0.008) B M M INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 N J C H K STYLE 21: PIN 1. ANODE 1 2. N/C 3. ANODE 2 4. CATHODE 2 5. N/C 6. CATHODE 1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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