ETC NPDS8301

NPDS8301
NPDS8302
NPDS8303
S2
NC
D2
G2
G1
NC
SO-8
S1
D1
N-Channel General Purpose Dual Amplifier
Sourced from Process 83.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
V
VDG
Drain-Gate Voltage
40
VGS
Gate-Source Voltage
40
V
IGF
Forward Gate Current
10
mA
TJ , Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
1997 Fairchild Semiconductor Corporation
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NPDS8301 / NPDS8302 / NPDS8303
Discrete POWER & Signal
Technologies
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)GSS
Gate-Source Breakdown Voltage
I G = 1.0 µA, VDS = 0
IGSS
Gate Reverse Current
VGS = 20 V, VDS = 0
VGS( off)
VGS
Gate-Source Cutoff Voltage
VDS = 20 V, ID = 1.0 nA
- 0.5
- 3.5
V
Gate-Source Voltage
VDS = 20 V, ID = 200 µA
- 0.3
- 3.5
V
VDS = 20 V, VGS = 0
0.5
6.0
mA
1000
700
4000
1200
µmhos
µmhos
20
µmhos
5.0
µmhos
5.0
10
15
mV
mV
mV
10
15
25
µV/°C
µV/°C
µV/°C
- 40
V
100
pA
ON CHARACTERISTICS
IDSS
Zero-Gate Voltage Drain Current*
SMALL SIGNAL CHARACTERISTICS
gfs
Common Source Forward
Transconductance
goss
Common Source Output Conductance
gos
Common Source Output
Conductance
Differential Match
VGS1 - VGS2
∆VGS1 - VGS2
Differential Drift
VDS = 20 V, VGS = 0, f = 1.0 kHz
VDS = 20 V, ID = 200 µA,
f = 1.0 kHz
VDS = 20 V, ID = 200 µA,
f = 1.0 kHz
VDS = 20 V, ID = 200 µA,
f = 1.0 kHz
VDG = 20 V, ID = 200 µA,
NPDS8301
NPDS8302
NPDS8303
VDS = 20 V, ID = 200 µA,
NPDS8301
TA = 25 to 85 °C
NPDS8302
NPDS8303
*Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%
Typical Characteristics
Parameter Interactions
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Common Drain-Source
NPDS8301 / NPDS8302 / NPDS8303
General Purpose Dual Amplifier
(continued)
Typical Characteristics
(continued)
Transfer Characteristics
Channel Resistance
vs. Temperature
Noise Voltage vs. Frequency
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Transfer Characteristics
Leakage Current vs. Voltage
Noise Voltage vs. Current
NPDS8301 / NPDS8302 / NPDS8303
General Purpose Dual Amplifier
(continued)
Typical Characteristics
(continued)
Output Conductance
vs. Drain Current
Transconductance vs.
Drain Current
Capacitance vs. Voltage
Differential Offset
CMRR vs. Drain Current
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NPDS8301 / NPDS8302 / NPDS8303
General Purpose Dual Amplifier