NTUD01N02 Product Preview Power MOSFET 100 mAmps, 20 Volts Dual N–Channel SC–88 • • • • • • 2.5 V Gate Drive with Low On–Resistance Low Threshold Voltage: Vth = 0.5 to 1.5 V, Ideal for Portable High Speed Enhancement Mode Small Package Easily Designed Drive Circuits http://onsemi.com 100 mAMPS 20 VOLTS RDS(on) = 10 N–Channel D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Gate–to–Source Voltage – Continuous Symbol Value Unit VDS 20 Vdc VGSS 10 Vdc Drain Current – Continuous @ TA = 25°C ID 100 Total Power Dissipation @ TA = 25°C PD 150 mW Channel Temperature Tch 150 °C Operating and Storage Temperature Range Tstg – 55 to 150 °C G mAdc S MARKING DIAGRAM 6 5 4 1 2 3 SC–88/SOT–363 CASE 419B STYLE 1 N02 D N02 D = Device Code = Date Code PIN ASSIGNMENT Source–1 1 6 Drain–1 Gate–1 2 5 Gate–2 Drain–2 3 4 Source–2 Top View ORDERING INFORMATION Device NTUD01N02 Package SC–88 Shipping 3000 Tape & Reel This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. Semiconductor Components Industries, LLC, 2001 January, 2001 – Rev. 0 1 Publication Order Number: NTUD01N02/D NTUD01N02 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 20 – – Vdc – – 1.0 – – 1.0 0.5 – 1.5 – 5.0 10 YFS 20 – – mS pF OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µA) Drain Cut–off Current (VDS = 20 Vdc, VGS = 0 Vdc) IDSS Gate–Body Leakage Current (VGS = 10 Vdc, VDS = 0) IGSS µAdc µAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = 3.0 Vdc, ID = 0.1 mAdc) Vth Drain–to–Source On–Resistance (VGS = 2.5 Vdc, ID = 10 mAdc) RDS(on) Forward Transfer Admittance (VDS = 3.0 Vdc, ID = 10 mAdc) Vdc Ω DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 3.0 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss – 5.5 – Output Capacitance (VDS = 3.0 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss – 25 – Reverse Transfer Capacitance (VDS = 3.0 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Crss – 1.6 – (VDD = 3.0 Vdc, ID = 10 mAdc, VGS = 0 to 2.5 Vdc) ton – 0.14 – toff – 0.14 – SWITCHING CHARACTERISTICS Turn–On Delay Time Turn–Off Delay Time http://onsemi.com 2 µs NTUD01N02 PACKAGE DIMENSIONS SC–88 (SOT–363) CASE 419B–01 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A G V 6 5 DIM A B C D G H J K N S V 4 –B– S 1 2 3 D 6 PL 0.2 (0.008) M B M N J C H K http://onsemi.com 3 INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 STYLE 1: PIN 1. 2. 3. 4. 5. 6. EMITTER 2 BASE 2 COLLECTOR 1 EMITTER 1 BASE 1 COLLECTOR 2 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 0.30 0.40 NTUD01N02 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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