HE8404SG GaAlAs Infrared Emitting Diode ADE-208-997 (Z) 1st Edition Dec. 2000 Description The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment. Features • High efficiency and high output power Package Type • HE8404SG: SG1 Internal Circuit 1 2 HE8404SG Absolute Maximum Ratings (TC = 25°C) Item Symbol Value Unit Forward current IF 250 mA Reverse voltage VR 3 V Operating temperature Topr –20 to +60 °C Storage temperature Tstg –40 to +90 °C Optical and Electrical Characteristics (TC = 25°C) Item Symbol Min Typ Max Unit Test Conditions Optical output power PO 40 — — mW I F = 200 mA Peak wavelength λp 790 820 850 nm I F = 200 mA Spectral width ∆λ — 50 — nm I F = 200 mA Forward voltage VF — — 2.5 V I F = 200 mA Reverse current IR — — 100 µA VR = 3 V Capacitance Ct — 30 — pF VR = 0 V, f = 1 MHz Rise time tr — 10 — ns I F = 50 mA Fall time tf — 10 — ns I F = 50 mA 2 HE8404SG Typical Characteristic Curves Optical Output Power vs. Forward Current Forward Current vs. Forward Voltage 250 50 40 TC = −20°C 30 0°C 25°C 40°C 60°C 20 10 Forward current, IF (mA) Optical output power, PO (mW) 60 200 150 TC = −20°C 100 50 0 0 50 100 150 200 250 0 0.5 1.0 1.5 2.0 Forward current, IF (mA) Forward voltage, VF (V) Wavelength Distribution Pulse Response 2.5 Current pulse TC = 25°C TC = 25°C 80 Relative intensity Relative radiation intensity (%) 0 100 25°C 60°C 60 40 Optical pulse 20 0 −40 −20 λp 20 Wavelength, λ (nm) 40 20 ns/div 3 HE8404SG 100 30 TC = 25°C θ (d e g. ) Radiation Pattern 0 An g le, 80 60 60 40 20 90 100 80 60 40 20 0 Relative radiation intensity (%) 4 20 40 60 Angle, θ (deg.) 80 0 Relative radiation intensity (%) Typical Characteristic Curves (cont) HE8404SG Package Dimensions 2 – φ 0.45 ± 0.1 2.54 ± 0.35 0 1. ± 1 14 ± 2 0.55 ± 0.2 2.7 ± 0.2 φ 5.4 ± 0.2 φ 4.65 ± 0.2 φ 4.0 ± 0.2 0.65 ± 0.2 Unit: mm 2 (2 – φ 1.05) 2 0. 0 1. ± 2 0. 45° ±5 ° Hitachi Code JEDEC EIAJ Mass (reference value) IR/SG1 — — 0.25 g 5 HE8404SG Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. 1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam shall be observed or adjusted through infrared camera or equivalent. 6 HE8404SG Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Straβe 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 7