ETC HVB350BYP

HVB350BYP
Variable Capacitance Diode for VCO
ADE-208-1420 (Z)
Rev. 0
May 2001
Features
• High capacitance ratio. (n = 2.8 min)
• Low series resistance. (rs = 0.5 max)
• Good C-V linearity.
• CMPAK-4 Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
Laser Mark
Package Code
HVB350BYP
V1
CMPAK-4
Pin Arrangement
4
3
4
3
V1
1
(Top View)
2
1
2
(Top View)
1. Anode
2. Anode
3. Cathode
4. Cathode
HVB350BYP
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Reverse voltage
VR
15
V
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Electrical Characteristics *1
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
nA
VR = 15 V
IR1


10
IR2


100
C1
15.5

17.0
C4
5.0

6.0
Capacitance ratio
n
2.8



C1 / C4
Series resistance
rs


0.5
Ω
VR = 1 V, f = 470 MHz
Reverse current
Capacitance
Note:
1. Per one device.
Rev.0, May 2001, page 2 of 5
VR = 15 V, Ta = 60°C
pF
VR = 1 V, f = 1 MHz
VR = 4 V, f = 1 MHz
HVB350BYP
10-6
30
10-7
25
f=1MHz
Capacitance C (pF)
Reverse current IR (A)
Main Characteristic
10-8
10-9
10-10
10-11
15
10
5
10-12
10-13
0
20
4
8
12
16
Reverse voltage VR (V)
0
0.1
20
Fig.1 Reverse current vs. Reverse voltage
1.0
Reverse voltage VR (V)
10
Fig.2 Capacitance vs. Reverse voltage
0.5
0
f=470MHz
LF = ∆(LogC) / ∆(Log VR)
Series resistance rS (Ω)
0.4
0.3
0.2
-0.5
-1.0
0.1
0
0.5
1.0
10
30
Reverse voltage VR (V)
Fig.3 Series resistance vs. Reverse voltage
-1.5
0.1
1.0
Reverse voltage VR (V)
10
Fig.4 LF vs. Reverse voltage
Rev.0, May 2001, page 3 of 5
HVB350BYP
Package Dimensions
As of January, 2001
Unit: mm
2.0 ± 0.2
0.3 ± 0.05
0.3 ± 0.05
0 – 0.1
0.9 ± 0.1
(0.2)
(0.65) (0.65)
1.3 ± 0.2
+ 0.1
0.16– 0.06
2.1 ± 0.2
0.3 ± 0.05
(0.425) 1.25 ± 0.1
(0.65) (0.65)
0.3 ± 0.05
(0.425)
1.3 ± 0.2
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
Rev.0, May 2001, page 4 of 5
CMPAK-4
—
Conforms
0.006 g
HVB350BYP
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Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Colophon 4.0
Rev.0, May 2001, page 5 of 5