ETC HVM306

HVM306
Silicon Epitaxial Planar Diode for
Lowpass Circuit
Preliminary
Rev. 1
Jun. 1992
Features
•
•
•
•
Pin Arrangement
High capacitance ratio. (n=10min)
Low series resistance.
Low cost.
MPAK package is suitable for high density
surface mounting and high speed assembly.
3
1
2
(Top View)
Ordering Information
Type No.
Laser Mark
Package Code
HVM306
T9
MPAK
1 Anode
2 Anode
3 Cathode
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
Unit
Reverse voltage
VR
30
V
Junction temperature
Tj
125
°C
Storage temperature
Tstg
-55 to +125
°C
Electrical Characteristics (Ta = 25°C)
Item
Reverse current
Symbol Min
IR(1)
—
Typ
—
Max
10
IR(2)
C2
—
29.4
—
—
100
34.3
Capacitance ratio
C25
n
2.67
10.0
—
—
3.02
—
Series resistance
rs
—
—
0.75
Capacitance
OUT
IN
VT
Lowpass Circuit
Unit
nA
pF
Test Condition
VR = 30 V
VR = 30 V, Ta= 60 °C
VR = 2 V, f = 1 MHz
—
VR = 25 V, f = 1 MHz
C2/C25
Ω
C = 9 pF, f = 470MHz
10
10
1.0
10
Reverse current I R (nA)
Forward current I F (mA)
HVM306
-1
10
10-2
-3
10
10 -4
10
10
-5
2
10
1
10 -1
10 -2
10
-6
3
-3
-4
0
0.2
0.4
0.6
0.8
1.0
10
0
10
Forward voltage VF (V)
20
30
40
50
Reverse voltage VR (V)
Fig.1 Forward current Vs.
Forward voltage
Fig.2 Reverse current Vs.
Reverse voltage
60
100
f=1MHz
f=1MHz
Capacitance C (pF)
Capacitance C (pF)
50
10
40
30
20
10
1
0.5
1
10
Reverse voltage VR (V)
Fig.3 Capacitance Vs.
Reverse voltage
30
0
0.5
1
10
Reverse voltage VR (V)
Fig.4 Capacitance Vs.
Reverse voltage
30
HVM306
1.0
0.0
0.8
-0.5
LF =∆(LogC)/∆(LogVR )
Series resistance rs ( Ω )
f=470MHz
0.6
0.4
-1.0
-1.5
0.2
0.0
0.5
10
1
Reverse voltage VR (V)
30
-2.0
0.5
10
1
30
Reverse voltage VR (V)
Fig.5 Series resistance Vs.
Reverse voltage
Fig.6 Linearity factor Vs.
Reverse voltage
Unit: mm
0.65 – 0.3
+ 0.10
0.4 – 0.05
Laser Mark
+ 0.1
Package Dimensions
+ 0.10
0.16 – 0.06
0.3
2.8 +– 0.1
+ 0.2
– 0.6
2.8
1 Anode
2 Anode
3 Cathode
+ 0.2
1.9
1.1 – 0.1
1
0.95
0.1
0.65 +– 0.3
2
0.95
0 – 0.10
0.3
T 9
1.5
3
HITACHI Code MPAK(1)
JEDEC Code
—
EIAJ Code
SC-59A
Weight (g)
0.011