CYPRESS CY7C1399BN

CY7C1399BN
256K (32K x 8) Static RAM
Features
expansion is provided by an active LOW Chip Enable (CE) and
active LOW Output Enable (OE) and tri-state drivers. The
device has an automatic power-down feature, reducing the
power consumption by more than 95% when deselected.
• Temperature Ranges
— Industrial: –40°C to 85°C
An active LOW Write Enable signal (WE) controls the
writing/reading operation of the memory. When CE and WE
inputs are both LOW, data on the eight data input/output pins
(I/O0 through I/O7) is written into the memory location
addressed by the address present on the address pins (A0
through A14). Reading the device is accomplished by selecting
the device and enabling the outputs, CE and OE active LOW,
while WE remains inactive or HIGH. Under these conditions,
the contents of the location addressed by the information on
address pins is present on the eight data input/output pins.
— Automotive-A: –40°C to 85°C
• Single 3.3V power supply
• Ideal for low-voltage cache memory applications
• High speed: 12 ns
• Low active power
— 180 mW (max.)
• Low-power alpha immune 6T cell
• Available in Pb-free and non Pb-free Plastic SOJ and
TSOP I packages
Functional Description[1]
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and Write Enable
(WE) is HIGH. The CY7C1399BN is available in 28-pin
standard 300-mil-wide SOJ and TSOP Type I packages.
The CY7C1399BN is a high-performance 3.3V CMOS Static
RAM organized as 32,768 words by 8 bits. Easy memory
Logic Block Diagram
Pin Configurations
SOJ
Top View
I/O0
INPUT BUFFER
I/O1
ROW DECODER
I/O2
SENSE AMPS
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
32K x 8
ARRAY
I/O3
I/O4
I/O5
CE
WE
I/O6
POWER
DOWN
COLUMN
DECODER
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
A4
A3
A2
A1
OE
A0
CE
I/O7
I/O6
I/O5
I/O4
I/O3
I/O7
A 14
A 12
A 13
A 11
A 10
OE
Selection Guide
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum CMOS Standby Current (µA)
Commercial
-12
-15
-20
12
15
20
55
50
45
500
500
500
50
Commercial (L)
50
50
Industrial
500
500
Automotive-A
500
Note:
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.
Cypress Semiconductor Corporation
Document #: 001-06490 Rev. *A
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised August 31, 2006
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CY7C1399BN
Pin Configuration
TSOP
Top View
OE
A1
A2
A3
A4
WE
VCC
A5
A6
A7
A8
A9
A10
A11
A0
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A14
A13
A12
21
22
23
20
19
18
17
16
15
14
13
12
11
10
9
8
24
25
26
27
28
1
2
3
4
5
6
7
Maximum Ratings
Output Current into Outputs (LOW)............................. 20 mA
(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current .................................................... >200 mA
Operating Range
Supply Voltage on VCC to Relative GND[2] .... –0.5V to +4.6V
Range
Ambient
Temperature
VCC
DC Voltage Applied to Outputs
in High Z State[2] ....................................–0.5V to VCC + 0.5V
Commercial
0°C to +70°C
3.3V ±300 mV
DC Input Voltage[2] .................................–0.5V to VCC + 0.5V
Industrial
–40°C to +85°C
Automotive-A
–40°C to +85°C
Electrical Characteristics Over the Operating Range[1]
-12
Parameter
Description
Test Conditions
Min.
-15
Max.
2.4
-20
Min. Max.
VOH
Output HIGH Voltage
VCC = Min., IOH = –2.0 mA
2.4
VOL
Output LOW Voltage
VCC = Min., IOL = 4.0 mA
VIH
Input HIGH Voltage
2.2
VCC +
0.3V
2.2
VCC +
0.3V
VIL
Input LOW Voltage[2]
–0.3
0.8
–0.3
IIX
Input Leakage Current
–1
+1
IOZ
Output Leakage
Current
GND ≤ VI ≤ VCC,
Output Disabled
–5
+5
ICC
VCC Operating
Supply Current
VCC = Max., IOUT = 0 mA,
f = fMAX = 1/tRC
ISB1
Automatic CE
Power-Down
Current—
TTL Inputs
Max. VCC, CE ≥ VIH,
VIN ≥ VIH, or VIN ≤ VIL,
f = fMAX
0.4
Automatic CE
Power-Down
Current— CMOS
Inputs[3]
Max. Unit
2.4
0.4
V
0.4
V
2.2
VCC +
0.3V
V
0.8
–0.3
0.8
V
–1
+1
–1
+1
µA
–5
+5
–5
+5
µA
55
50
45
mA
Comm’l
5
5
5
mA
Comm’l (L)
4
4
Ind’l
5
5
Auto-A
ISB2
Min.
Max. VCC, CE ≥ VCC – 0.3V, Comm’l
VIN ≥ VCC – 0.3V, or VIN ≤ 0.3V,
Comm’l (L)
WE ≥VCC – 0.3V or WE ≤ 0.3V,
Ind’l
f = fMAX
Auto-A
mA
5
500
µA
500
500
50
50
µA
500
500
µA
500
µA
Notes:
2. Minimum voltage is equal to – 2.0V for pulse durations of less than 20 ns.
3. Device draws low standby current regardless of switching on the addresses.
Document #: 001-06490 Rev. *A
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CY7C1399BN
Capacitance[4]
Parameter
Description
CIN: Addresses
Test Conditions
Input Capacitance
CIN: Controls
COUT
Max.
Unit
5
pF
6
pF
6
pF
TA = 25°C, f = 1 MHz,
VCC = 3.3V
Output Capacitance
AC Test Loads and Waveforms[5]
R1 317Ω
3.3V
ALL INPUT PULSES
3.0V
OUTPUT
INCLUDING
JIG AND
SCOPE
CL
GND
R2
351Ω
10%
Equivalent to:
90%
10%
90%
THÉVENINEQUIVALENT
167Ω
OUTPUT
1.73V
≤ 3 ns
≤ 3 ns
Switching Characteristics Over the Operating Range[5]
-12
Parameter
Description
Min.
-15
Max.
Min.
-20
Max.
Min.
Max.
Unit
Read Cycle
tRC
Read Cycle Time
tAA
Address to Data Valid
tOHA
Data Hold from Address Change
tACE
CE LOW to Data Valid
12
15
20
ns
tDOE
OE LOW to Data Valid
5
6
7
ns
tLZOE
OE LOW to Low
12
Z[6]
12
3
OE HIGH to High
tLZCE
CE LOW to Low Z[6]
tHZCE
CE HIGH to High
tPU
CE LOW to Power-Up
tPD
CE HIGH to Power-Down
15
5
0
20
6
0
12
ns
6
3
7
ns
ns
7
0
15
ns
ns
0
3
6
ns
3
0
3
Z[6, 7]
20
3
0
Z[6, 7]
tHZOE
15
ns
ns
20
ns
Write Cycle[8, 9]
tWC
Write Cycle Time
12
15
20
ns
tSCE
CE LOW to Write End
8
10
12
ns
tAW
Address Set-Up to Write End
8
10
12
ns
tHA
Address Hold from Write End
0
0
0
ns
tSA
Address Set-Up to Write Start
0
0
0
ns
tPWE
WE Pulse Width
8
10
12
ns
tSD
Data Set-Up to Write End
7
8
10
ns
tHD
Data Hold from Write End
0
0
0
ns
tHZWE
tLZWE
WE LOW to High Z
[8]
[6]
WE HIGH to Low Z
7
3
7
3
7
3
ns
ns
Notes:
4. Tested initially and after any design or process changes that may affect these parameters.
5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
IOL/IOH and capacitance CL = 30 pF.
6. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
7. tHZOE, tHZCE, tHZWE are specified with CL = 5 pF as in AC Test Loads. Transition is measured ±500 mV from steady state voltage.
8. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can
terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
9. The minimum write cycle time for write cycle #3 (WE controlled, OE LOW) is the sum of tHZWE and tSD.
Document #: 001-06490 Rev. *A
Page 3 of 8
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CY7C1399BN
Data Retention Characteristics (Over the Operating Range - L version only)
Parameter
Description
Conditions
VDR
VCC for Data Retention
ICCDR
Data Retention Current
tCDR
Chip Deselect to Data
Retention Time
tR
Operation Recovery Time
Min.
Max.
Unit
20
µA
2.0
VCC = VDR = 2.0V,
CE > VCC – 0.3V,
VIN > VCC – 0.3V or
VIN < 0.3V
V
0
0
ns
tRC
ns
Data Retention Waveform
DATA RETENTION MODE
3.0V
VCC
3.0V
VDR > 2V
tR
tCDR
CE
Switching Waveforms
Read Cycle No. 1[10, 11]
tRC
ADDRESS
tOHA
DATA OUT
tAA
PREVIOUS DATA VALID
DATA VALID
Read Cycle No. 2[11, 12]
tRC
CE
tACE
OE
DATA OUT
tDOE
tLZOE
HIGH IMPEDANCE
tLZCE
VCC
SUPPLY
CURRENT
tHZOE
tHZCE
HIGH
IMPEDANCE
DATA VALID
tPD
tPU
ICC
50%
50%
ISB
Notes:
10. Device is continuously selected. OE, CE = VIL.
11. WE is HIGH for read cycle.
12. Address valid prior to or coincident with CE transition LOW.
Document #: 001-06490 Rev. *A
Page 4 of 8
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CY7C1399BN
Switching Waveforms (continued)
Write Cycle No. 1 (WE Controlled)[8, 13, 14]
tWC
ADDRESS
CE
tAW
tHA
tSA
WE
tPWE
OE
tSD
DATA I/O
NOTE 15
tHD
DATAINVALID
tHZOE
Write Cycle No. 2 (CE Controlled)[8, 13, 14]
tWC
ADDRESS
tSCE
CE
tSA
tAW
tHA
WE
tSD
DATA I/O
tHD
DATAINVALID
Write Cycle No. 3 (WE Controlled, OE LOW)[9, 14]
tWC
ADDRESS
CE
tAW
WE
tHA
tSA
tSD
DATA I/O
tHD
DATA IN VALID
NOTE 15
tHZWE
tLZWE
Notes:
13. Data I/O is high impedance if OE = VIH.
14. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state.
15. During this period, the I/Os are in the output state and input signals should not be applied.
Document #: 001-06490 Rev. *A
Page 5 of 8
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CY7C1399BN
Truth Table
CE
WE
OE
H
X
X
High Z
Input/Output
Deselect/Power-Down
Mode
Standby (ISB)
Power
L
H
L
Data Out
Read
Active (ICC)
L
L
X
Data In
Write
Active (ICC)
L
H
H
High Z
Deselect, Output Disabled
Active (ICC)
Ordering Information
Speed
(ns)
12
Ordering Code
CY7C1399BN-12VC
Package
Diagram
51-85031
28-Lead Molded SOJ
51-85071
28-Lead TSOP I
CY7C1399BN-12VXC
CY7C1399BN-12ZC
CY7C1399BN-12ZXC
28-Lead TSOP I (Pb-free)
CY7C1399BNL-12ZC
28-Lead TSOP I
CY7C1399BN-12VXI
28-Lead Molded SOJ
28-Lead Molded SOJ (Pb-free)
51-85071
CY7C1399BN-15ZXC
Commercial
28-Lead TSOP I
28-Lead TSOP I (Pb-free)
51-85031
28-Lead Molded SOJ (Pb-free)
CY7C1399BN-15VI
28-Lead Molded SOJ
CY7C1399BN-15VXI
28-Lead Molded SOJ (Pb-free)
CY7C1399BN-15ZI
Industrial
28-Lead TSOP I (Pb-free)
CY7C1399BNL-15ZXC
51-85071
CY7C1399BN-15ZXI
20
28-Lead Molded SOJ (Pb-free)
CY7C1399BN-15VXC
CY7C1399BNL-15VXC
Commercial
28-Lead TSOP I (Pb-free)
51-85031
CY7C1399BN-15VC
CY7C1399BN-15ZC
Operating
Range
28-Lead Molded SOJ (Pb-free)
CY7C1399BNL-12ZXC
15
Package Type
Industrial
28-Lead TSOP I
28-Lead TSOP I (Pb-free)
CY7C1399BN-15VXA
51-85031
28-Lead Molded SOJ (Pb-free)
CY7C1399BN-20ZXC
51-85071
28-Lead TSOP I (Pb-free)
Automotive-A
Commercial
Please contact local sales representative regarding availability of these parts.
Document #: 001-06490 Rev. *A
Page 6 of 8
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CY7C1399BN
Package Diagrams
28-Lead (300-Mil) Molded SOJ (51-85031)
NOTE :
1. JEDEC STD REF MO088
2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH
MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.006 in (0.152 mm) PER SIDE
MIN.
MAX.
3. DIMENSIONS IN INCHES
DETAIL
A
EXTERNAL LEAD DESIGN
PIN 1 ID
14
1
0.291
0.300
15
0.330
0.350
28
OPTION 1
0.697
0.713
0.014
0.020
OPTION 2
SEATING PLANE
0.120
0.140
0.050
TYP.
0.026
0.032
0.013
0.019
A
0.007
0.013
0.004
0.025 MIN.
0.262
0.272
51-85031-*C
28-Lead TSOP 1 (8x13.4 mm) (51-85071)
51-85071-*G
All products and company names mentioned in this document may be the trademarks of their respective holders.
Document #: 001-06490 Rev. *A
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© Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
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CY7C1399BN
Document History Page
Document Title: CY7C1399BN 256K (32K x 8) Static RAM
Document Number: 001-06490
REV.
ECN NO.
ISSUE
DATE
ORIG. OF
CHANGE
**
423877
See ECN
NXR
New Data Sheet
*A
498575
See ECN
NXR
Added Automotive-A range
Removed IOS parameter from DC Electrical Characteristics table
Updated Ordering Information table.
Document #: 001-06490 Rev. *A
DESCRIPTION OF CHANGE
Page 8 of 8
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