ETC IRG4MC50U

PD -94273
IRG4MC50U
UltraFast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
•
•
•
•
•
•
•
C
Eletrically Isolated and Hermetically Sealed
Simple Drive Requirements
Latch-proof
Fast Speed operation 3 kHz - 8 kHz
High operating frequency
Switching-loss rating includes all "tail" losses
Ceramic eyelets
VCES = 600V
VCE(on) max = 2.25V
G
@VGE = 15V, IC = 27A
E
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
IR Hi-Rel Generation 3 IGBT's
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO-254AA
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
PD @ TC = 25°C
PD @ T C = 100°C
TJ
TSTG
Parameter
Max.
Units
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current ➀
Clamped Inductive Load Current ➁
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
600
35*
27
140
140
± 20
150
60
-55 to + 150
V
A
V
W
°C
300 (0.063in./1.6mm from case for 10s)
9.3 (typical)
g
Thermal Resistance
Parameter
R thJC
Junction-to-Case
www.irf.com
Min Typ Max Units
—
—
0.83
Test Conditions
°C/W
1
6/28/01
IRG4MC50U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
600 –––
Emitter-to-Collector Breakdown Voltage S 17 –––
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.56
––– –––
VCE(ON)
Collector-to-Emitter Saturation Voltage
––– –––
––– –––
VGE(th)
Gate Threshold Voltage
3.0 –––
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -14
gfe
Forward Transconductance T
16 –––
–––
–––
ICES
Zero Gate Voltage Collector Current
––– –––
IGES
Gate-to-Emitter Leakage Current
––– –––
V(BR)CES
V(BR)ECS
Max. Units
Conditions
–––
V
VGE = 0V, IC = 1.0 mA
–––
V
VGE = 0V, IC = 1.0 A
––– V/°C VGE = 0V, IC = 1.0 mA
VGE = 15V
2.25
IC = 27A
2.75
V
IC = 35A
See Fig.2, 5
2.0
IC = 27A , TJ = 125°C
6.0
VCE = VGE, IC = 1.0 mA
––– mV/°C VCE = VGE, IC = 250 µA
–––
S
VCE ≥ 15V, IC = 27A
50
VGE = 0V, VCE = 480V
µA
2000
VGE = 0V, VCE = 480V, TJ = 125°C
±100
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Ets
td(on)
tr
td(off)
tr
Ets
LC+LE
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Rise Time
Total Switching Loss
Total Inductance
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.8
Max. Units
Conditions
270
IC = 27A
38
nC VCC = 480V
See Fig. 8
90
VGE = 15V
75
TJ = 25°C
75
IC = 27A, VCC = 480V
ns
150
VGE = 15V, RG = 2.35Ω
100
Energy losses include "tail"
0.9
mJ See Fig. 10, 11, 13, 14
75
TJ = 150°C,
75
ns
IC = 27A, VCC = 480V
200
VGE = 15V, RG = 2.35Ω
150
Energy losses include "tail"
2.0
mJ See Fig. 13, 14
–––
nH Measured from Collector lead (6mm/
0.25in. from package) to Emitter
lead (6mm / 0.25in. from package)
––– 4150 –––
VGE = 0V
––– 250 –––
pF
VCC = 30V
See Fig. 7
––– 45 –––
ƒ = 1.0MHz
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 100µH, RG = 2.35Ω,
S Pulse width ≤ 80µs; duty factor ≤ 0.1%.
T Pulse width 5.0µs, single shot.
(See fig. 13a)
2
www.irf.com
IRG4MC50U
80
Triangular wave:
Square wave:
60% of rated
voltage
Load Current ( A )
60
Clamp voltage:
80% of rated
Ideal diodes
40
For both:
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 37W
20
0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
1000
100
10
TJ = 150 °C
TJ = 25 °C
V
= 15V
20µs PULSE WIDTH
GE
1
0.1
1
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
10
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
1000
100
TJ = 150 °C
TJ = 25 °C
10
V
= 50V
5µs PULSE WIDTH
CC
1
4
6
8
10
12
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4MC50U
3.0
60
VGE = 15V
VCE , Collector-to Emitter Voltage (V)
LIMITED BY PACKAGE
50
40
30
20
10
0
25
50
75
100
125
150
80µs PULSE WIDTH
IC = 54A
2.0
IC = 27A
IC = 14A
1.0
-60 -40 -20
T J , Junction Temperature (°C)
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
1
Thermal Response (Z thJC)
Maximum DC Collector Current (A)
V GE = 15V
D = 0.50
0.20
0.1
0.01
0.00001
0.10
PDM
0.05
t1
0.02
0.01
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
www.irf.com
IRG4MC50U
20
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
6000
VGE , Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
8000
Cies
4000
Coes
2000
C
res
VCC = 400V
480V
I C = 27A
16
12
8
4
0
0
1
10
0
100
20
40
60
80
100
120
QG , Total Gate Charge (nC)
VCE , Collector-to-Emitter Voltage (V)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
10
1.60
VCC= 480V
VGE = 15V
TJ = 25°C
I C = 27A
Total Switching Losses (mJ)
Total Switching Losses (mJ)
1.20
0.80
0.40
RG = 2.35Ω
VGE = 15V
VCC = 480V
IC = 54A
IC = 27A
1
IC = 14A
0.1
0
10
20
30
40
RG, Gate Resistance (Ω )
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
50
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J, Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4MC50U
1000
RG = 2.35Ω
TJ = 150°C
VGE = 15V
4.0
IC , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
5.0
VCC = 480V
3.0
2.0
1.0
0.0
100
SAFE OPERATING AREA
10
1
10
20
30
40
50
60
IC, Collector Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
VGE = 20V
TJ = 125°
0.1
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig. 12 - Turn-Off SOA
www.irf.com
IRG4MC50U
L
D .U .T.
VC *
50V
RL =
0 - 720V
1 00 0V
720V
4 X [email protected]°C
480µF
960V
Q
R
* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax )
* Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor
w ill inc rea se to obta in ra ted Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
D river*
D .U .T.
VC
Fig. 14a - Switching Loss
Test Circuit
50V
1000V
Q
* Driver same type
as D.U.T., VC = 720V
R
S
Q
R
9 0%
1 0%
S
VC
90 %
Fig. 14b - Switching Loss
t d (o ff)
10 %
IC 5%
Waveforms
tf
tr
t d (o n )
t=5µ s
E on
E o ff
E ts = ( Eo n +E o ff )
www.irf.com
7
IRG4MC50U
Case Outline and Dimensions — TO-254AA
0.12 [.005]
0.12 [.005]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
6.60 [.260]
6.32 [.249]
1.27 [.050]
1.02 [.040]
A
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
31.40 [1.235]
30.35 [1.195]
1
2
1
13.84 [.545]
13.59 [.535]
B
R 1.52 [.060]
3
4.82 [.190]
3.81 [.150]
3X
3.81 [.150]
1.14 [.045]
0.89 [.035]
3.81 [.150]
3.81 [.150]
0.36 [.014]
NOT E S :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
2. ALL DIME NS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. CONF ORMS T O JEDEC OUT LINE T O-254AA.
2
B
17.40 [.685]
16.89 [.665]
3. CONT ROLLING DIMENS ION: INCH.
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
3
2X
1.27 [.050]
1.02 [.040]
A
22.73 [.895]
21.21 [.835]
13.84 [.545]
13.59 [.535]
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
B
2X
4.06 [.160]
3.56 [.140]
3X
1.14 [.045]
0.89 [.035]
0.36 [.014]
B
A
NOT ES:
A
PIN AS S IGNMENT S
PIN ASSIGNMENTS
1 = DRAIN
1 = COLLECTOR
2 = S OURCE
2 = EMITTER
3 = GAT E
3 = GATE
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
2. ALL DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES ].
3. CONT ROLLING DIMENS ION: INCH.
4. CONFORMS T O JEDEC OUT LINE T O-254AA BEF ORE LEADF ORMING.
PIN AS S IGNMENT S
PIN ASSIGNMENTS
1 = DRAIN
1 = COLLECTOR
2 = S OURCE
2 = EMITTER
3 = GAT E
3 = GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids
that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 06/01
8
www.irf.com