INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 29 October 1999. MIL-PRF-19500/456D 29 July 1999 SUPERSEDING MIL-S-19500/456C 18 November 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPE 2N5302 and 2N5303, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, high-power transistors. Four level of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (similar to TO-3). See 3.3. 1.3 Maximum ratings. Type PT 1/ TA = +25°C PT 1/ TC = +100°C VCBO VCEO VEBO IB IC TJ and TSTG RθJC W W V dc V dc V dc A dc A dc °C °C/W Max 5 5 115 115 60 80 60 80 5.0 5.0 7.5 7.5 30 20 -65 to +200 -65 to +200 0.875 0.875 2N5302 2N5303 1/ Derate linearly, 1.14 mW/°C above TC = +100°C. Derate linearly, 28.57 mW/°C above TA = +25°C. 1.4 Primary electrical characteristics. Min Max hFE2 1/ hFE2 1/ hFE VBE(sat)2 1/ VCE(sat)2 1/ Cobo VCE = 2 V dc VCE = 2 V dc VCE = 10 V dc IC = 15 A dc IC = 15 A dc VCB = 10 V dc IC = 15 A dc IC = 10 A dc IC = 1 A dc f = 1 MHz IB = 1.5 A dc IB = 1.5 A dc IE = 0 100 kHz ≤ f ≤ 1 MHz 2N5302 2N5303 15 60 15 60 V dc 2N5302 V dc 2 40 1.8 2N5303 2N5302 2N5303 V dc V dc V dc 2 1 1.5 Pulse response ton toff pF µs µs 800 1.1 3.0 1/ Pulsed (see 4.5.1). Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/456D FIGURE 1. Physical dimensions – (similar to TO-3). 2 MIL-PRF-19500/456D Ltr Dimensions Inches Min CD Notes Millimeters Max Min .875 Max 22.23 CH .270 .380 6.86 8.89 HR .495 .525 12.57 13.34 4 HR1 .131 .188 3.33 4.78 4 HT .060 .135 1.52 3.43 LD .038 .043 0.97 1.09 LL .312 .500 7.92 12.70 L1 MHD .151 .161 3.84 4.09 MHS 1.177 1.197 29.90 30.40 PS .420 .440 10.67 11.18 3,4 PS1 s1 .205 .225 5.21 5.72 3,4 .655 .675 16.64 17.15 .050 4,6 1.27 4 NOTES: 1. Dimensions are in inches. Lead 1 is emitter, lead 2 is base, and case is collector. 2. Metric equivalents are given for general information only. 3. These dimensions should be measured at points .050 inch (1.27 mm) +.005 inch (0.13 mm) -.000 inch (0.00 mm) below seating plane. When gauge is not used, measurement will be made at the seating plane. 4. Two places. 5. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. 6. Lead diameter shall not exceed twice LD within L1. 7. In accordance with ANSI Y14.5M, diameters are equivalent to φx symbology. FIGURE 1. Physical dimensions – (similar to TO-3). 3 MIL-PRF-19500/456D 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards and handbooks. The following specifications, standards and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD DEPARTMENT OF DEFENSE MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Defense Automated Printing Service, 700 Robbins Avenue, Building 4D (DPM – DODSSP), Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for related associated specifications or specification sheets), the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500, and as specified herein. 3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF19500. 3.3 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as specified in, MIL-PRF-19500 and figure 1, (similar to TO-3), herein. 3.3.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. 3.4 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in paragraph 1.3, 1.4, and table I. 3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein. 3.7 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.4). 4 MIL-PRF-19500/456D 4. VERIFICATION 4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3) c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.3 Screening (JANS, JANTX and JANTXV levels). Screening shall be in accordance with MIL-PRF-19500 (table IV), and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500) Measurement JANS level 9 ICEX1 and hFE2 11 ICEX1 and hFE2; JANTX JANTXV levels Not applicable ICEX1 and hFE2 ∆ICEX1 ≤ 100 percent of initial value or 50 µA dc, whichever is greater. ∆hFE2 ≤ ±20 percent of initial value. 12 13 See 4.3.1 See 4.3.1 Subgroups 2 and 3 of table I Subgroup 2 of table I herein; herein; ∆ICEX1 ≤ 100 percent of initial value or 50 µA dc whichever is greater; ∆ICEX1 ≤ 100 percent of initial value or 100 µA dc, whichever ∆hFE2 ≤ ±15 percent of initial value. is greater; ∆hFE2 ≤ 20 percent of initial value. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TJ = +187.5°C ±12.5°C, VCE ≥ 10 V dc, TA ≤ +35°C 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. Electrical measurements (end-points) shall be in accordance with the applicable inspections of table I, group A, subgroup 2 herein. 5 MIL-PRF-19500/456D 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in tables VIa (JANS) and VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and paragraphs 4.4.2.1 and 4.4.2.2 herein. Electrical measurements (end-points) shall be in accordance with the applicable inspections of table I, group A, subgroup 2 herein. 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500. Subgroup B4 Method 1037 Condition VCB = 20 V dc; PD = 5 W at TA = room ambient as defined in 4.5 of MIL-STD-750; ton = toff = 3 minutes minimum for 2,000 cycles. No heat sink or forced air cooling on devices shall be permitted. B5 1027 VCB = 20 V dc; TA = +125°C ±25°C for 96 hours; PT = 5 W at TA = +125°C or adjusted as required by the chosen TA to give an average lot, TJ = +275°C. 4.4.2.2 Group B inspection, table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B3 1037 For solder die attach: VCB ≥ 10 V dc; TA ≤ 35°C, 2,000 cycles. No heat sink or forced air cooling on devices shall be permitted. B3 1026 For eutectic die attach: VCB ≥ 10 V dc; TA ≤ 35°C, adjust PT to achieve TJ = 175°C minimum. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, group A, subgroup 2 herein. 4.4.3.1. Group C inspection, table VII of MIL-PRF-19500. Subgroup Method Conditions C6 1037 For solder die attach: VCB ≥ 10 V dc; TA ≤ 35°C, 6,000 cycles. No heat sink or forced air cooling on devices shall be permitted. C6 1026 For eutectic die attach: VCB ≥ 10 V dc; TA ≤ 35°C, adjust PT to achieve TJ = 175°C minimum. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with method 3131, MIL-STD-750. The following details shall apply: a. Collector current magnitude during power application shall be 3.14 A dc. b. Collector to emitter voltage magnitude shall be 20 V dc. c. Reference temperature measuring point shall be the case. d. Reference point temperature shall be +25°C ≤ TR ≤ +75°C and recorded before the test is started. e. Mounting arrangement shall be with heat sink to header. f. Maximum limit of RθJC shall be 0.875°C/W. 6 MIL-PRF-19500/456D TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Collector - emitter breakdown voltage 3011 Bias condition D; IC = 200 mA dc pulsed (see. 4.5.1) V(BR)CEO 2N5302 2N5303 60 80 V dc V dc ICEO 10.0 µA dc Bias condition D; VEB = 5 V dc IEBO 5.0 µA dc 3041 Bias condition A; VBE = 1.5 V dc; VCE = 60 V dc VCE = 80 V dc ICEX1 5.0 µA dc Collector - base cutoff current 2N5302 2N5303 3036 Bias condition D; ICBO 5.0 µA dc Base - emitter saturated voltage 3066 Test condition A; IC = 10 A dc; IB = 1 A dc; pulsed (see 4.5.1) VBE(sat)1 1.7 V dc Base - emitter saturated voltage 3066 Test condition A; IC = 15 A dc; IB = 1.5 A dc pulsed (see 4.5.1) VBE(sat)2 1.8 2.0 V dc V dc 2.5 2.5 V dc V dc 1.8 1.5 V dc V dc Collector - emitter cutoff current 2N5302 2N5303 3041 Emitter - base cutoff current 3061 Collector - emitter cutoff current 2N5302 2N5303 Bias condition D; VCE = 60 V dc VCE = 80 V dc VCE = 60 V dc VCE = 80 V dc 2N5302 2N5303 Base - emitter saturated voltage 3066 2N5302 2N5303 Base - emitter voltage (nonsaturated) 2N5302 2N5303 3066 Test condition A; IC = 20 A dc; pulsed (see 4.5.1); IB = 2 A dc IB = 4 A dc VBE(sat)3 Test condition B; VCE = 2 V dc; pulsed (see 4.5.1); IC = 15 A dc IC = 10 A dc VBE1 See footnote at end of table. 7 MIL-PRF-19500/456D TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 2 - Continued Base - emitter voltage (unsaturated) 3066 2N5302 2N5303 Collector - emitter saturated voltage Test condition B; VCE = 4 V dc, pulsed (4.5.1) VBE2 IC = 30 A dc IC = 20 A dc 3071 IC = 10 A dc; IB = 1 A dc; pulsed (see 4.5.1) 3071 IC = 15 A dc; IB = 1.5 A dc; pulsed (see 4.5.1) 3071 Collector - emitter saturated voltage 2N5302 (only) 0.75 1.0 V dc V dc 1.0 1.5 V dc V dc 2.0 2.0 V dc V dc 3.0 V dc VCE(sat)2 2N5302 2N5303 Collector - emitter saturated voltage 2N5302 2N5303 V dc V dc VCE(sat)1 2N5302 2N5303 Collector - emitter saturated voltage 3.0 2.5 IC = 20 A dc; pulsed (see 4.5.1); IB = 2 A dc IB = 4 A dc VCE(sat)3 3071 IC = 30 A dc; pulsed (see 4.5.1); IB = 6 A dc VCE(sat)4 Forward-current transfer ratio 3076 VCE = 2 V dc; IC = 1 A dc; pulsed (see 4.5.1) hFE1 Forward-current transfer ratio 2N5302 2N5303 3076 VCE = 2 V dc; pulsed (see 4.5.1); IC = 15 A dc IC = 10 A dc hFE2 Forward-current transfer ratio 2N5302 2N5303 3076 VCE = 4 V dc; pulsed (see 4.5.1); IC = 30 A dc IC = 20 A dc hFE3 40 15 15 60 60 5 5 Subgroup 3 High-temperature operation: Collector to emitter cutoff current 2N5302 2N5303 TA = +150°C 3041 ICEX2 Bias condition A; VBE = 1.5 V dc; VCE = 60 V dc VCE = 80 V dc See footnote at end of table. 8 50 µA dc MIL-PRF-19500/456D TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 3 - Continued Low-temperature operation: Forward current transfer ratio 2N5302 2N5303 TA = -55°C 3076 hFE4 VCE = 2 V dc; pulsed (see 4.5.1); IC = 15 A dc IC = 10 A dc 7 7 Subgroup 4 Small-signal short-circuit forward-current transfer ratio 3206 VCE = 10 V dc; IC = 1 A dc; f = 1 kHz hfe 40 240 Magnitude of small-signal short-circuit forwardcurrent transfer ratio 3306 VCE = 10 V dc; IC = 1 A dc; f = 1 MHz hfe 2 40 Open circuit output capacitance 3236 VCB = 10 V dc; IE = 0; 100 kHz < f ≤ 1 MHz Cobo 800 pF Switching parameters: Pulse delay time See figure 2 td 0.2 µs Pulse rise time See figure 2 tr 0.9 µs Pulse storage time See figure 2 ts 2.0 µs Pulse fall time See figure 2 tf 1.0 µs Subgroup 5 Safe operating area (continuous dc) 3051 TC = 25°C; power application time ≥ 1 sec, 1 cycle (see figures 3 and 4) Test 1 2N5302 VCE = 6.67 V dc; IC = 30 A dc 2N5303 VCE = 10 V dc; IC = 20 A dc Test 2 2N5302, 2N5303 VCE = 20 V dc; IC = 10 A dc See footnote at end of table. 9 MIL-PRF-19500/456D TABLE I. Group A inspection – Continued. Inspection 1/ MIL-STD-750 Method Conditions Subgroup 5 - Continued Test 3 2N5302, 2N5303 VCE = 40 V dc; IC = 3 A dc Test 4 2N5302 VCE = 50 V dc; IC = 600 mA dc 2N5303 VCE = 60 V dc; IC = 600 mA dc Safe operating area (clamped switching) 2N5302 2N5303 Electrical measurements TA = 25°C; VCE = 15 V dc; (see figures 5 and 6) Clamp voltage = 60 V dc; IC = 30 A dc Clamp voltage = 80 V dc; IC = 20 A dc See table I, group A, subgroup 2 Subgroups 6 and 7 Not applicable 1/ For sampling plan see MIL-PRF-19500. 10 Symbol Limits Min Unit Max MIL-PRF-19500/456D NOTES: 1. The rise time (tr) of the applied pulse shall be ≤ 2 ns; duty cycle ≤ 2 percent; generator source impedance shall be 50 Ω. 2. Output sampling oscilloscope: ZIN ≥ 100 kΩ; CIN ≤ 12 pF; rise time ≤ 0.2 ns. FIGURE 2. Pulse response test circuit. 11 MIL-PRF-19500/456D FIGURE 3. Maximum safe operating area graph dc. 12 MIL-PRF-19500/456D FIGURE 4. Safe operating area for switching between saturation and cutoff (unclamped inductive load). 13 MIL-PRF-19500/456D *L = 2.0 mH (2 each 1 mH, 50 A, .001 Ω, Sanford Miller CK-50, or equivalent). Procedure: 1. 2. 3. With switch S1 closed, set the specified test conditions. Open S1. Device fails if the clamp voltage if not reached. Perform specified endpoints tests. FIGURE 5. Clamped inductive sweep test circuit. FIGURE 6. Safe operating area for switching between saturation and cutoff (clamped inductive load). 14 MIL-PRF-19500/456D 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES 6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents should specify the following: a. Issue of DODISS to be cited in the solicitation. b. Lead finish as specified. c. Type designation and product assurance level. 6.3 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extensiveness of the changes. 6.4 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturer’s List QML-19500 whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center Columbus, DSCC-VQE, Columbus, OH 43216. Custodians: Army - CR Navy - EC Air Force - 11 NASA - NA DLA - CC Preparing activity: DLA - CC (Project 5961-2182) Review activities: Army - AR, AV, MI, SM Navy - AS, CG, MC Air Force – 13, 19 15 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7, and send to preparing activity. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER 2. DOCUMENT DATE (YYYYMMDD) MIL-PRF-19500/456D 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER, TYPE: 2N5302, 2N5303, JAN, JANTX, JANTXV, AND JANS 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First Middle Initial) c. ADDRESS (Include Zip Code) 8. PREPARING ACTIVITY a. NAME Alan Barone c. ADDRESS (Include Zip Code) DSCC-VAC 3990 East Broad Street Columbus, Ohio 43216-5000 DD Form 1426, FEB 1999 (EG) WHS/DIOR, Feb 99 b. ORGANIZATION d. TELEPHONE (Include Area Code) (1) Commercial (2) DSN (If applicable) 7. DATE SUBMITTED (YYYYMMDD) b. TELEPHONE (Include Area Code (1) Commercial (2) DSN 614-692-0510 850-0510 IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman Road, Suite 2533 Fort Belvoir, Virginia 22060-6221 Telephone (703)767-6888 DSN 427-6888 PREVIOUS EDITIONS ARE OBSOLETE.