AP1000B-00 SILICON PIN DIODE CHIP DESCRIPTION: The AP1000B-00 is a Planar Silicon PIN Diode Chip Designed for High Speed Switch and Limiter Applications Up to 18 GHz. FEATURES INCLUDE: • Low Capacitance - 0.10 pF Typical • Fast Switching - 10 nS Typical • SiO2 Passivation PACKAGE STYLE CHP152 MAXIMUM RATINGS IF 100 mA VR 100 V PDISS 0.5 W @ TA = 25 C TJ -65 C to +150 C 0.002” ±0.001” O O O O O TSTG -65 C to +150 C θJC 50 C/W 0.015”±0.002” SQ. Anode = Pad Cathode = Bottom Side O CHARACTERISTICS SYMBOL O TA = 25 C TEST CONDITIONS MINIMUM VBR IR = 10 µA CJ VR = 10 V f = 1.0 MHz RS IF = 20 mA f = 100 MHz TL IF = 10 mA IR = 6.0 mA trr IF = 20 mA VR = 10 V TYPICAL MAXIMUM V 100 1.0 0.10 pF 2.0 Ohms nS 100 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. UNITS 10 nS REV. A 1/1