NSS40200UW6T1G 40 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. • This is a Pb−Free Device http://onsemi.com −40 VOLTS 4.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 100 mW COLLECTOR 1, 2, 5, 6 3 BASE MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO −40 Vdc Collector-Base Voltage VCBO −40 Vdc Emitter-Base Voltage VEBO −7.0 Vdc IC −2.0 Adc A Collector Current − Continuous Collector Current − Peak ICM −4.0 Electrostatic Discharge ESD HBM Class 3B MM Class C 4 EMITTER E C WDFN6 CASE 506AP Pin 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MARKING DIAGRAM Total Device Dissipation, TA = 25°C Derate above 25°C PD (Note 1) 875 7.0 mW mW/°C 1 6 2 VA MG 5 G 3 4 RqJA (Note 1) 143 °C/W PD (Note 2) 1.5 11.8 W mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 85 °C/W Thermal Resistance, Junction−to−Lead #1 RqJL (Note 2) 23 °C/W Total Device Dissipation (Single Pulse < 10 sec) PDsingle (Notes 2 & 3) 3.0 W TJ, Tstg −55 to +150 °C Thermal Resistance, Junction−to−Ambient Total Device Dissipation, TA = 25°C Derate above 25°C Junction and Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ 100 mm2, 1 oz copper traces. 2. FR−4 @ 500 mm2, 1 oz copper traces. 3. Thermal response. © Semiconductor Components Industries, LLC, 2006 September, 2006 − Rev. 0 1 VA = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping † NSS40200UW6T1G WDFN6 (Pb−Free) 3000/ Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NSS40200UW6/D NSS40200UW6T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max −40 − − −40 − − −7.0 − − − − −0.1 − − −0.1 150 150 150 150 − − − − − − − − − − − − − −0.100 − − −0.020 −0.120 −0.200 −0.300 − −0.76 −0.900 − −0.80 −0.900 140 − − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = −40 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = −7.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS hFE DC Current Gain (Note 4) (IC = −10 mA, VCE = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) (IC = −2.0 A, VCE = −2.0 V) Collector −Emitter Saturation Voltage (Note 4) (IC = −0.1 A, IB = −0.010 A) (Note 5) (IC = −1.0 A, IB = −0.100 A) (IC = −1.0 A, IB = −0.010 A) (IC = −2.0 A, IB = −0.020 A) VCE(sat) Base −Emitter Saturation Voltage (Note 4) (IC = −1.0 A, IB = −0.01 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 4) (IC = −2.0 A, VCE = −3.0 V) VBE(on) Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) V V V fT MHz Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) Cibo − 500 pF Output Capacitance (VCB = −3.0 V, f = 1.0 MHz) Cobo − 100 pF Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) td − − 70 ns Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) tr − − 150 ns Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) ts − − 525 ns Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) tf − − 155 ns SWITCHING CHARACTERISTICS 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. 5. Guaranteed by design but not tested. http://onsemi.com 2 NSS40200UW6T1G 0.30 IC/IB = 10 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.15 VCE(sat) = 150°C 0.10 25°C 0.05 −55°C 0 0.001 0.01 0.1 1.0 IC/IB = 100 0.20 25°C 0.15 150°C 0.10 0.05 0 0.001 10 0.01 IC, COLLECTOR CURRENT (A) VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 600 150°C (2 V) 500 25°C (5 V) 25°C (2 V) −55°C (5 V) 200 1 −55°C 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain vs. Collector Current Figure 4. Base Emitter Saturation Voltage vs. Collector Current VCE = −1.0 V −55°C 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.1 0.001 0.9 0.2 0.001 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) VBE(on), BASE EMITTER TURN−ON VOLTAGE (V) 0.1 1.0 0.9 IC/IB = 10 1.0 0.3 −55°C (2 V) 0.01 10 1.1 150°C (5 V) 100 0.001 1.0 Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 700 300 0.1 IC, COLLECTOR CURRENT (A) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 400 VCE(sat) = −55°C 0.25 0.01 0.1 1.0 10 1.0 10 mA IC = 500 mA 100 mA 0.8 0.6 0.4 300 mA 0.2 0 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA) Figure 5. Base Emitter Turn−On Voltage vs. Collector Current Figure 6. Saturation Region http://onsemi.com 3 100 NSS40200UW6T1G Cobo, OUTPUT CAPACITANCE (pF) Cibo (pF) 425 375 325 275 225 140 130 120 110 100 175 0 1.0 2.0 3.0 4.0 5.0 Cobo (pF) 6.0 90 80 70 60 50 40 30 0 5.0 10 15 20 25 30 VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V) Figure 7. Input Capacitance Figure 8. Output Capacitance 10 1.0 S 100 mS 1.0 mS 1 IC (A) Cibo, INPUT CAPACITANCE (pF) 475 10 mS 0.1 0.01 0.01 Thermal Limit 0.1 1 10 VCE (Vdc) Figure 9. PNP Safe Operating Area http://onsemi.com 4 100 35 NSS40200UW6T1G PACKAGE DIMENSIONS WDFN6 2x2 CASE 506AP−01 ISSUE B D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. CENTER TERMINAL LEAD IS OPTIONAL. TERMINAL LEAD IS CONNECTED TO TERMINAL LEAD # 4. 6. PINS 1, 2, 5 AND 6 ARE TIED TO THE FLAG. A B PIN ONE REFERENCE 0.10 C 2X ÍÍÍ ÍÍÍ ÍÍÍ E DIM A A1 A3 b b1 D D2 E E2 e K L L2 J J1 0.10 C 2X A3 0.10 C A 0.08 C 7X A1 C D2 6X SOLDERING FOOTPRINT* SEATING PLANE 2.30 4X e L2 L 1 MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.25 0.35 0.51 0.61 2.00 BSC 1.00 1.20 2.00 BSC 1.10 1.30 0.65 BSC 0.15 REF 0.20 0.30 0.20 0.30 0.27 REF 0.65 REF 1.10 6X 3 6X 0.35 0.43 b1 6X 0.10 C A E2 B 1 0.05 C 0.60 1.25 NOTE 5 K 6 4 b J J1 0.35 6X 0.10 C A 0.05 C B 0.34 NOTE 3 BOTTOM VIEW 0.65 PITCH 0.66 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NSS40200UW6/D