ADPOW APTGF150X60TE3G

APTGF150X60TE3G
3 Phase bridge
NPT IGBT Power Module
VCES = 600V
IC = 150A @ Tc = 80°C
Application
P+
Q1
Q3
Q5
5
1
•
9
6
2
T1
Features
10
U
V
W
R
7
3
8
Q2
4
•
Non Punch Through (NPT) Fast IGBT ®
•
•
•
•
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
11
12
Q4
Q6
T2
N-
19
Benefits
17
18
AC Motor control
16 15
14
21
13
1 2
3 4
5 6
7 8
9 10
11 12
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
•
•
•
•
•
•
•
•
TC = 25°C
Max ratings
600
225
150
450
±20
700
Tj = 125°C
[email protected]
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
April, 2006
20
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-5
APTGF150X60TE3G – Rev 2
•
APTGF150X60TE3G
All ratings @ Tj = 25°C unless otherwise specified
Test Conditions
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol
Cies
Cres
Td(on)
Tr
Td(off)
Tf
Characteristic
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Turn-on Delay Time
Rise Time
Td(off)
Turn-off Delay Time
Tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
Reverse diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
IF
Maximum Reverse Leakage Current
Tj = 25°C
Tj = 125°C
Tj = 25°C
VGE =15V
IC = 200A
Tj = 125°C
VGE = VCE , IC = 4 mA
VGE = 20V, VCE = 0V
Diode Forward Voltage
Er
Reverse Recovery Energy
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Typ
VGE = 0V
VCE = 600V
1.7
Min
Test Conditions
Min
600
VR=600V
IF = 150A
VGE = 0V
IF = 150A
VR = 300V
di/dt =5600A/µs
2.0
2.2
4.5
Test Conditions
VGE = 0V, VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 200A
R G = 1.5Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 300V
IC = 200A
R G = 1.5Ω
VGE = ±15V
Tj = 125°C
VBus = 300V
IC = 200A
Tj = 125°C
R G = 1.5Ω
DC Forward Current
VF
Min
Typ
9000
800
163
43
253
250
500
2.5
Unit
µA
V
6.5
400
V
nA
Max
Unit
pF
ns
33
180
49
ns
285
41
3.7
mJ
6.3
Typ
Tj = 25°C
Tj = 125°C
Tc = 80°C
Tj = 25°C
Tj = 125°C
150
1.25
1.2
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
4
150
250
11
17
APT website – http://www.advancedpower.com
Max
Max
250
500
Unit
V
µA
A
1.6
V
mJ
ns
April, 2006
Symbol Characteristic
µC
2-5
APTGF150X60TE3G – Rev 2
Electrical Characteristics
APTGF150X60TE3G
Temperature sensor NTC
Symbol Characteristic
R25
Resistance @ 25°C
B 25/50 T25 = 298.16 K
RT =
R25

 1 1 
− 
exp B25 / 50 
 T25 T 

Symbol Characteristic
VISOL
TJ
TSTG
TC
Torque
Wt
Max
Unit
kΩ
K
Min
Typ
Max
0.18
0.44
Unit
IGBT
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Typ
5
3375
T: Thermistor temperature
RT : Thermistor value at T
Thermal and package characteristics
RthJC
Min
To heatsink
M5
2500
-40
-40
-40
3
°C/W
V
150
125
125
4.5
300
°C
N.m
g
E3 Package outline (dimensions in mm)
PIN 1
A LL DIM ENS IONS MARKED " * " A RE TOL ERE NCED AS :
APT website – http://www.advancedpower.com
3-5
APTGF150X60TE3G – Rev 2
April, 2006
PIN 21
APTGF150X60TE3G
Typical Performance Curve
Output Characteristics (VGE =15V)
Output Characteristics
400
400
300
250
250
IC (A)
IC (A)
300
T J=125°C
200
VGE =15V
VGE =20V
150
100
100
T J=125°C
50
VGE =9V
50
0
0
0
0.5
1
1.5
2
VCE (V)
2.5
3
3.5
0
1
2
3
VCE (V)
4
5
Energy losses vs Collector Current
Transfert Characteristics
400
12
TJ=25°C
350
300
VCE = 300V
VGE = 15V
RG = 1.5 Ω
TJ = 125°C
9
E (mJ)
250
200
150
Er
Er
TJ =25°C
Eon
0
0
6
7
Eon
3
50
5
Eoff
6
T J=125°C
100
8
9
10
11
0
12
100
200
300
400
IC (A)
V GE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
20
500
VCE = 300V
VGE =15V
IC = 200A
TJ = 125°C
10
Eon
400
IC (A)
15
E (mJ)
VGE=12V
200
150
IC (A)
TJ = 125°C
350
TJ=25°C
350
Eoff
300
Eoff
200
Er
100
5
VGE=15V
T J=125°C
RG=1.5 Ω
0
0
0
2
4
6
8
10 12
Gate Resistance (ohms)
14
0
16
100
200
300
400
500
600
V CE (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.16
IGBT
0.9
April, 2006
0.7
0.12
0.5
0.08
0.04
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
APT website – http://www.advancedpower.com
4-5
APTGF150X60TE3G – Rev 2
Thermal Impedance (°C/W)
0.2
APTGF150X60TE3G
Forward Characteristic of diode
300
60
V CE=300V
D=50%
RG =1.5 Ω
TJ=125°C
TC=75°C
ZCS
50
ZVS
40
250
200
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
70
hard
switching
30
150
100
20
10
50
0
0
0
50
100
150
I C (A)
200
TJ=125°C
TJ =25°C
0
250
0.25
0.5
0.75
VF (V)
1
1.25
1.5
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.45
0.4
0.35
0.9
Diode
0.7
0.3
0.25
0.2
0.15
0.5
0.3
0.1
0.1
0.05
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
5-5
APTGF150X60TE3G – Rev 2
April, 2006
rectangular Pulse Duration (Seconds)