CES2301 PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES D -20V , -2.4A , RDS(ON)=95m Ω (typ) @VGS=-4.5V. RDS(ON)=130m Ω(typ) @VGS=-2.5V. High dense cell design for low RDS(ON). Rugged and reliable. 7 SOT-23 Package. G SOT-23 D S S G ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol Parameter Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS Ć8 V Drain Current-Continuous a b -Pulsed ID -2.4 A IDM -10 A Drain-Source Diode Forward Current a IS -1.6 A Maximum Power Dissipation a PD 1.25 W TJ, TSTG -55 to 150 C RįJA 100 C/W Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a 1 CES2301 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter Min Typ C Max Unit Symbol Condition Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS VDS = -16V, VGS = 0V -1 µA Gate-Body Leakage IGSS VGS =Ć8V, VDS = 0V Ć100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250µA Drain-Source On-State Resistance RDS(ON) OFF CHARACTERISTICS 7 -20 V ON CHARACTERISTICS b Forward Transconductance V VGS = -4.5V, ID = -2.8A 95 130 mΩ VGS = -2.5V, ID = -2.0A 130 190 mΩ VDS ś -5V, VGS = -4.5V ID(ON) gFS On-State Drain Current -0.45 VDS = -5V, ID = - 2.8A -6 A 6.5 S 447 PF 124 PF 80 PF c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS =-6V, VGS = 0V f =1.0MHZ c SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time tD(ON) VDD = -6V, ID = -1A, VGEN = - 4.5V, RGEN = 6 Ω tr tD(OFF) 5 25 ns 19 60 ns 95 110 ns Fall Time tf 65 80 ns Total Gate Charge Qg 5.4 10 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS =-6V, ID = -2.8A, VGS =-4.5V 2 0.8 nC 1.1 nC CES2301 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter Min Typ C Max Unit Condition Symbol DRAIN-SOURCE DIODE CHARACTERISTICS b Diode Forward Voltage VGS = 0V, Is =-1.6A VSD -1.2 Notes a.Surface Mounted on FR4 Board, t ś 5sec. b.Pulse Test:Pulse Width ś300ijs, Duty Cycle ś 2%. c.Guaranteed by design, not subject to production testing. 7 10 10 VGS=4.5,4,3V 8 -ID, Drain Current (A) -ID, Drain Current (A) 8 VGS=2.5V 6 VGS=2.0V 4 2 VGS=1.5V 1 2 3 6 4 2 Tj=125 C 0 5 4 -55 C 0.5 1 1.5 2 2.5 3 -VDS, Drain-to-Source Voltage (V) -VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 1.80 RDS(ON), Normalized RDS(ON),On-Resistance(Ohms) 800 C, Capacitance (pF) 25 C 0 0 0 600 Ciss 400 200 Coss Crss 0 4 8 12 16 1.60 ID=-2.8A VGS=-4.5V 1.40 1.20 1.00 0.80 0.60 -50 -25 0 20 0 25 50 75 100 125 150 TJ, Junction Temperature( C) -VDS, Drain-to Source Voltage (V) Figure 4. On-Resistance Variation with Temperature Figure 3. Capacitance 3 V 1.60 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage CES2301 VDS=VGS ID=-250ӴA 1.40 1.20 1.00 0.80 0.60 0.40 -50 -25 0 25 50 75 100 125 150 1.15 ID=-250ӴA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 10 75 100 125 150 10 -Is, Source-drain current (A) gFS, Transconductance (S) 50 Figure 6. Breakdown Voltage Variation with Temperature Figure 5. Gate Threshold Variation with Temperature 8 6 4 2 VDS=-5V 1 0.1 0.01 0.001 0 0 1 2 3 0.2 4 0.6 0.4 -IDS, Drain-Source Current (A) 0.8 1.2 1.0 -VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current Figure 8. Body Diode Forward Voltage Variation with Source Current 5 VDS=-6V ID=-2.8A 4 -ID, Drain Current (A) VGS, Gate to Source Voltage (V) 25 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) 7 0 3 2 1 10 1 R 1 2 3 4 5 Qg, Total Gate Charge (nC) )L im 1ms it 10ms 100ms 1s DC 10 -1 10 0 ON 10 0 -2 0 ( DS TA=25 C Tj=150 C Single Pulse 10 -1 10 0 10 1 10 -VDS, Drain-Source Voltage (V) Figure 10. Maximum Safe Operating Area Figure 9. Gate Charge 4 1 CES2301 VDD t on V IN td(off) tf 90% 90% D VOUT VOUT VGS RGEN toff tr td(on) RL 10% INVERTED 10% G 90% VIN S 50% 50% 10% PULSE WIDTH Figure 12. Switching Waveforms Figure 11. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 2 1 D=0.5 0.2 PDM 0.1 PDM 0.1 t1 Single Pulse 10 -4 10 t2 1. RįJA (t)=r (t) * RįJA 2. RįJA=See Datasheet 3. TJM-TA = P* RįJA (t) 4. Duty Cycle, D=t1/t2 0.02 0.01 t1 t2 0.05 -3 10 -2 10 -1 10 0 10 1 Square Wave Pulse Duration (sec) Figure 13. Normalized Thermal Transient Impedance Curve 5 10 2 7