BUK761R8-30C N-channel TrenchMOS standard level FET Rev. 02 — 20 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package, using NXP Ultra High-Performance (UHP) automotive TrenchMOS technology. 1.2 Features 175 °C rated Standard level compatible Q101 compliant TrenchMOS technology 1.3 Applications 12 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit - - 100 A ID drain current VGS = 10 V; Tmb = 25 °C; see Figure 1 and 4 Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 333 W VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 and 13 - 1.5 1.8 mΩ - - 1.7 J [1][2] Static characteristics RDSon drain-source on-state resistance Avalanche ruggedness ID = 100 A; Vsup ≤ 30 V; EDS(AL)S non-repetitive drain-source avalanche RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C energy [1] Refer to document 9397 750 12572 for further information. [2] Continuous current is limited by package. BUK761R8-30C NXP Semiconductors N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning Pin Symbol Description 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain Simplified outline Graphic Symbol D mb G mbb076 S 2 1 3 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number BUK761R8-30C Package Name Description Version D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead SOT404 cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS drain-source voltage VDGR drain-gate voltage VGS gate-source voltage ID drain current Conditions RGS = 20 kΩ Min Max Unit - 30 V - 30 V -20 20 V Tmb = 100 °C; VGS = 10 V; see Figure 1 and 4 [1][2] - 100 A Tmb = 25 °C; VGS = 10 V; see Figure 1 and 4 [1][2] - 100 A Tmb = 25 °C; VGS = 10 V; see Figure 1 and 4 [1][3] - 312 A IDM peak drain current Tmb = 25 °C; tp ≤ 10 μs; pulsed; see Figure 4 - 1249 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 333 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C - 1.7 J - - J Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 100 A; Vsup ≤ 30 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C EDS(AL)R repetitive drain-source avalanche energy see Figure 3 [4][5] [6][7] Source-drain diode IS ISM source current peak source current Tmb = 25 °C [1][3] - 312 A Tmb = 25 °C [1][2] - 100 A - 1249 A tp ≤ 10 μs; pulsed; Tmb = 25 °C BUK761R8-30C_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 20 August 2007 2 of 15 BUK761R8-30C NXP Semiconductors N-channel TrenchMOS standard level FET [1] Refer to document 9397 750 12572 for further information. [2] Continuous current is limited by package. [3] Current is limited by chip power dissipation rating. [4] Maximum value not quoted. Repetitive rating defined in avalanche rating figure. [5] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [6] Repetitive avalanche rating limited by an average junction temperature of 170 °C. [7] Refer to application note AN10273 for further information. 003aab338 300 ID (A) 03aa16 120 Pder (%) 80 200 40 100 (1) 0 0 0 50 100 150 200 0 50 100 Tmb (°C) VGS 10 V P der = (1) Capped at 100 A due to package. Fig 1. Continuous drain current as a function of mounting base temperature Tmb (°C) 200 × 100 % Fig 2. Normalized total power dissipation as a function of mounting base temperature BUK761R8-30C_2 Product data sheet P tot P tot (25°C ) 150 © NXP B.V. 2007. All rights reserved. Rev. 02 — 20 August 2007 3 of 15 BUK761R8-30C NXP Semiconductors N-channel TrenchMOS standard level FET 003aab373 103 IAL (A) 102 (1) (2) 10 (3) 1 10-3 10-2 10-1 1 tAL (ms) 10 (1) Singleípulse; Tmb = 25 °C. (2) Singleípulse; Tmb = 150 °C. (3) Repetitive. Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time 003aab339 104 ID (A) Limit RDSon = VDS / ID 103 tp = 10 μs 100 μs 102 (1) DC 1 ms 10 10 ms 100 ms 1 10-1 1 10 102 VDS (V) Tmb = 25 °C; IDM is single pulse (1) Capped at 100 A due to package. Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK761R8-30C_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 20 August 2007 4 of 15 BUK761R8-30C NXP Semiconductors N-channel TrenchMOS standard level FET 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient mounted on printed circuit board; minimum footprint - 50 - K/W Rth(j-mb) thermal resistance from junction to mounting base see Figure 5 - - 0.45 K/W 003aab340 1 Zth(j-mb) (K/W) δ = 0.5 0.2 10-1 0.1 0.05 0.02 δ= P 10-2 single shot tp T t tp T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit ID = 250 μA; VGS = 0 V; Tj = 25 °C 30 - - V ID = 250 μA; VGS = 0 V; Tj = -55 °C 27 - - V - - 4.4 V ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 11 and 10 1 - - V ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 11 and 10 2 3 4 V Static characteristics V(BR)DSS VGSth drain-source breakdown voltage gate-source threshold ID = 1 mA; VDS = VGS; voltage Tj = -55 °C; see Figure 10 BUK761R8-30C_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 20 August 2007 5 of 15 BUK761R8-30C NXP Semiconductors N-channel TrenchMOS standard level FET Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C - 0.02 1 μA VDS = 30 V; VGS = 0 V; Tj = 175 °C - - 500 μA VDS = 0 V; VGS = 20 V; Tj = 25 °C - 2 100 nA VDS = 0 V; VGS = -20 V; Tj = 25 °C - 2 100 nA VGS = 10 V; ID = 25 A; Tj = 175 °C; see Figure 12 and 13 - - 3.4 mΩ VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 and 13 - 1.5 1.8 mΩ IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 16 - 0.85 1.2 V IGSS RDSon gate leakage current drain-source on-state resistance Source-drain diode VSD source-drain voltage trr reverse recovery time IS = 20 A; dIS/dt = -100 A/μs; VGS = 0 V; VDS = 25 V - 73 - ns Qr recovered charge IS = 20 A; dIS/dt = -100 A/μs; VGS = 0 V; VDS = 25 V - 48 - nC Dynamic characteristics QG(tot) total gate charge ID = 25 A; VDS = 24 V; VGS = 10 V; see Figure 14 - 150 - nC QGS gate-source charge ID = 25 A; VDS = 24 V; VGS = 10 V; see Figure 14 - 36 - nC QGD gate-drain charge ID = 25 A; VDS = 24 V; VGS = 10 V; see Figure 14 - 52 - nC VGS(pl) gate-source plateau voltage ID = 25 A; VDS = 24 V; see Figure 14 - 5 - V Ciss input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; see Figure 15 - 7762 10349 pF Coss output capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; see Figure 15 - 1807 2168 pF Crss reverse transfer capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; see Figure 15 - 996 1365 pF td(on) turn-on delay time VDS = 25 V; RL = 1.2 Ω; VGS = 10 V; RG(ext) = 10 Ω - 52 - ns tr rise time VDS = 25 V; RL = 1.2 Ω; VGS = 10 V; RG(ext) = 10 Ω - 110 - ns td(off) turn-off delay time VDS = 25 V; RL = 1.2 Ω; VGS = 10 V; RG(ext) = 10 Ω - 186 - ns BUK761R8-30C_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 20 August 2007 6 of 15 BUK761R8-30C NXP Semiconductors N-channel TrenchMOS standard level FET Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit tf fall time VDS = 25 V; RL = 1.2 Ω; VGS = 10 V; RG(ext) = 10 Ω - 134 - ns LD internal drain inductance from upper edge of drain mounting base to center of die - 2.5 - nH LS internal source inductance from source lead to source bonding pad - 7.5 - nH 003aab341 300 ID (A) 003aab361 8 RDSon (mΩ) 20 7 5.5 5.5 VGS (V) = 5 6 6 200 4 VGS (V) = 5 100 7 2 4.5 15 4 0 20 0 0 2 4 6 8 10 VDS (V) T j = 25 °C 0 200 ID (A) 300 T j = 25 °C Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 7. Drain-source on-state resistance as a function of drain current; typical values BUK761R8-30C_2 Product data sheet 100 © NXP B.V. 2007. All rights reserved. Rev. 02 — 20 August 2007 7 of 15 BUK761R8-30C NXP Semiconductors N-channel TrenchMOS standard level FET 003aab344 180 003aab346 300 gfs (S) ID (A) 120 200 60 100 Tj = 175 °C 0 Tj = 25 °C 0 0 20 40 60 ID (A) 80 T j = 25 °C; VDS = 25 V 0 2 4 6 V (V) 8 GS VDS = 25 V Fig 8. Forward transconductance as a function of drain current; typical values 03aa35 10−1 ID (A) Fig 9. Transfer characteristics: drain current as a function of gate-source voltage; typical values 03aa32 5 VGS(th) (V) min 10−2 typ max 4 10−3 3 10−4 2 10−5 1 10−6 0 2 4 6 0 −60 max typ min 0 VGS (V) T j = 25 °C; VDS = VGS 120 180 Tj (°C) ID = 1 m A; VDS = VGS Fig 10. Sub-threshold drain current as a function of gate-source voltage Fig 11. Gate-source threshold voltage as a function of junction temperature BUK761R8-30C_2 Product data sheet 60 © NXP B.V. 2007. All rights reserved. Rev. 02 — 20 August 2007 8 of 15 BUK761R8-30C NXP Semiconductors N-channel TrenchMOS standard level FET 003aab360 4 03aa27 2 a RDSon (mΩ) 1.5 3 1 2 0.5 1 0 5 10 15 VGS (V) 20 0 -60 T j = 25 °C; ID = 25 A a= Fig 12. Drain-source on-state resistance as a function of gate-source voltage; typical values 003aab347 10 VGS (V) 0 60 Tj (°C) 180 R DSon R DSon (25°C ) Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature 003aab345 12000 C (pF) 8 120 Ciss VDS = 14 V 8000 6 VDS = 24 V Coss 4 4000 2 Crss 0 0 50 100 QG (nC) 150 T j = 25 °C; ID = 25 A 0 10-1 10 VDS (V) 102 VGS = 0 V ; f = 1 M H z Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values BUK761R8-30C_2 Product data sheet 1 © NXP B.V. 2007. All rights reserved. Rev. 02 — 20 August 2007 9 of 15 BUK761R8-30C NXP Semiconductors N-channel TrenchMOS standard level FET 003aab348 200 IS (A) 150 100 Tj = 175 °C Tj = 25 °C 50 0 0 0.5 1 1.5 VSD (V) 2 VGS = 0 V Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values BUK761R8-30C_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 20 August 2007 10 of 15 BUK761R8-30C NXP Semiconductors N-channel TrenchMOS standard level FET 7. Package outline SOT404 Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 2.54 2.90 2.10 15.80 14.80 2.60 2.20 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-02-11 06-03-16 SOT404 Fig 17. Package outline SOT404 (D2PAK) BUK761R8-30C_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 20 August 2007 11 of 15 BUK761R8-30C NXP Semiconductors N-channel TrenchMOS standard level FET 8. Soldering 10.85 10.60 10.50 1.50 7.50 7.40 1.70 2.25 2.15 8.15 8.275 8.35 1.50 4.60 0.30 4.85 5.40 7.95 8.075 3.00 0.20 1.20 1.30 1.55 solder lands solder resist 5.08 msd057 occupied area solder paste Fig 18. Reflow soldering footprint for SOT404 BUK761R8-30C_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 20 August 2007 12 of 15 BUK761R8-30C NXP Semiconductors N-channel TrenchMOS standard level FET 9. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK761R8-30C_2 20070820 Product data sheet - BUK761R8-30C_1 Modifications: BUK761R8-30C_1 • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. 20060725 Product data sheet BUK761R8-30C_2 Product data sheet - - © NXP B.V. 2007. All rights reserved. Rev. 02 — 20 August 2007 13 of 15 BUK761R8-30C NXP Semiconductors N-channel TrenchMOS standard level FET 10. Legal information 10.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 10.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 10.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 10.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of NXP B.V. 11. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] BUK761R8-30C_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 20 August 2007 14 of 15 BUK761R8-30C NXP Semiconductors N-channel TrenchMOS standard level FET 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 20 August 2007 Document identifier: BUK761R8-30C_2